PL evaluation of Si ring resonators (光エレクトロニクス)
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概要
- 論文の詳細を見る
Photoluminescence enhancement is observed for isolated Si microring resonators fabricated on a Si-on-insulator (SOI) wafer. The blue shift of the luminescent spectrum and tens of sharp peaks over the baseline of unprocessed SOI luminescence suggest two types of enhancements mechanisms: Band filling effect arisen from accumulating of photo-generated carriers in the structure, Purcell effect causing luminescent peaks corresponding to the resonance modes of the microring. Both of the enhancements contribute to the 100-fold enhancement relative to that of the unprocessed SOI. We believe that this is the first demonstration of the photoluminescence enhancement in the Si microring.
- 社団法人電子情報通信学会の論文
- 2007-12-07
著者
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Ishikawa Yasuhiko
Department Of Materials Engineering Graduate School Of Engineering The University Of Tokyo
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Ishikawa Yasuhiko
Department Of Materials Engineering The University Of Tokyo
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KOBAYASHI Yosuke
Department of Electrical Engineering, Tokai University graduate school
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WADA Kazumi
Department of Materials Engineering, Graduate School of Engineering The University of Tokyo
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Lin Shiyun
Department of Materials Engineering, The University of Tokyo
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Lin Shiyun
Department Of Materials Engineering The University Of Tokyo
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Wada Kazumi
Department Of Materials Engineering Graduate School Of Engineering The University Of Tokyo
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Kobayashi Yosuke
Department Of Animal Physiology Graduate School Of Agricultural Science Tohoku University
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Kobayashi Yosuke
Department Of Materials Engineering The University Of Tokyo
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Kobayashi Yosuke
Department of Allergy and Respiratory Medicine, The Fraternity Memorial Hospital, Japan
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