X-Ray Photoemission Study of SiO2/Si/Si0.55Ge0.45/Si Heterostructures
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概要
- 論文の詳細を見る
An SiO2/Si-cap/Si0.55Ge0.45 heterostructure was fabricated on p-type Si(100) and strained silicon on insulator (SOI) substrates by low pressure chemical vapor deposition (LPCVD) and subsequent thermal oxidation in an O2 + H2 gas mixture. Chemical bonding features and valence band offsets in the heterostructures were evaluated by using high-resolution x-ray photoelectron spectroscopy (XPS) measurements and thinning the stack layers with a wet chemical solution.
著者
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Ohta Akio
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Sakuraba Masao
Research Institute For Electrical Communications Tohoku University
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Miyazaki Seiichi
Graduate School Of Advanced Sciences And Matters Hiroshima University
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Murota Junichi
Research Institute For Electrical Communications Tohoku University
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Sakuraba Masao
Research Institute of Electrical Communication, Tohoku University
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Makihara Katsunori
Graduate School of Advanced Science and Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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Miyazaki Seiichi
Graduate School of Advanced Science and Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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