Evaluation of chemical structure and resistance switching characteristics of undoped titanium oxide and titanium-yttrium mixed oxide (Special issue: Dielectric thin films for future electron devices: science and technology)
スポンサーリンク
概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
著者
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Goto Yuta
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Ohta Akio
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Wei Guobin
Graduate School Of Advanced Sciences Of Matter Hiroshima University
関連論文
- Characterization of Mg Diffusion into HfO_2/SiO_2/Si(100) Stacked Structures and Its Impact on Detect State Densities(Session 7A : Gate Oxides)
- The Impact of H_2 Anneal on Resistive Switching in Pt/TiO_2/Pt Structure(Session 2A : Memory 1)
- Characterization of Mg Diffusion into HfO_2/SiO_2/Si(100) Stacked Structures and Its Impact on Detect State Densities(Session 7A : Gate Oxides)
- The Impact of H_2 Anneal on Resistive Switching in Pt/TiO_2/Pt Structure(Session 2A : Memory 1)
- Evaluation of Electronic Defect States at Poly-Si/HfO_2 interface by Photoelectron Yield Spectroscopy
- Contribution of Carbon to Growth of Boron-Containing Cluster in Heavily Boron-Doped Silicon
- Evaluation of chemical structure and resistance switching characteristics of undoped titanium oxide and titanium-yttrium mixed oxide (Special issue: Dielectric thin films for future electron devices: science and technology)
- Impact of Annealing Ambience on Resistive Switching on Pt/TiO_2/Pt Structure
- Characterization of Mg Diffusion into HfO_2/SiO_2/Si(100) Stacked Structures and Its Impact on Detect State Densities
- Characterization of Resistance-Switching of Si Oxide Dielectrics Prepared by RF Sputtering
- Performance Improvement of HfAlOxN n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors by Controlling the Bonding Configuration of Nitrogen Atoms Coordinated to Hf Atoms
- Evaluation of Chemical Composition and Bonding Features of Pt/SiOx/Pt MIM Diodes and Its Impact on Resistance Switching Behavior
- Control of Interfacial Reaction of HfO2/Ge Structure by Insertion of Ta Oxide Layer
- X-Ray Photoemission Study of SiO2/Si/Si0.55Ge0.45/Si Heterostructures
- Characterization of Resistive Switching of Pt/Si-Rich Oxide/TiN System
- Characterization of Resistance-Switching of Si Oxide Dielectrics Prepared by RF Sputtering