Characterization of Mg Diffusion into HfO_2/SiO_2/Si(100) Stacked Structures and Its Impact on Detect State Densities(Session 7A : Gate Oxides)

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概要

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• A stacked structure consisting of 〜1nm-thick MgO and 〜4nm-thick HfO_2 was formed on thermally grown SiO_2/Si(100) by MOCVD using dipivaloymethanato(DPM) precursors, and the influences of N_2 anneal on interfacial reaction and defect state density in this stacked structure were examined. The chemical bonding features of Mg atom were evaluated by using an Auger parameter independently of positive charge-up during XPS measurements. With Mg incorporation into HfO_2, a slight decrease in the oxidation number of Mg was detectable. The result suggests that Mg atoms are incorporated preferentially near oxygen vacancies in the HfO_2, which can be responsible for a reduction of the flat band voltage shifts observed from C-V characteristics.

• 2010-06-23

著者

• MIYAZAKI Seiichi

  Hiroshima University

• Miyazaki Seiichi

  Graduate School of Advanced Sciences of Matter, Hiroshima University

• MURAKAMI Hideki

  Graduate School of Advanced Sciences of Matter, Hiroshima University

• HIGASHI Seiichiro

  Graduate School of Advanced Sciences of Matter, Hiroshima University

• OHTA Akio

  Graduate School of Advanced Sciences of Matter, Hiroshima University

• KANME Daisuke

  Graduate School of Advanced Sciences of Matter, Hiroshima University

• Ohta Akiko

  Graduate School Of Advanced Sciences Of Matter Hiroshima University

• Ohta Akio

  Graduate School Of Advanced Sciences Of Matter Hiroshima University

• Kanme Daisuke

  Graduate School Of Advanced Sciences Of Matter Hiroshima University

• Miyazaki Seiichi

  Graduate School Of Advanced Sciences Of Matter Hiroshima University

• Miyazaki Seiichi

  Hiroshima Univ.

• Murakami Hideki

  Graduate School Of Advanced Sciences Of Matter Hiroshima University

• Miyazaki Seiichi

  Graduate School Of Advanced Sciences And Matters Hiroshima University

• Murakami Hideki

  Department Of Semiconductor Electronics And Integration Science Graduate School Of Advanced Sciences

• Murakami Hideki

  Graduate School Of Advanced Sciences And Matters Hiroshima University

• Higashi Seiichiro

  Department Of Semiconductor Electronics And Integration Science Graduate School Of Advanced Sciences

• Higashi Seiichiro

  Graduate School Of Advanced Sciences Of Matter Hiroshima University

• Miyazaki Seiichi

  Graduate School Of Engineering Nagoya University

• Higashi Seiichiro

  Graduate School of Advanced Science of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan

• Miyazaki Seiichi

  Graduate School of Advanced Science and Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan

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