Characterization of Resistance-Switching of Si Oxide Dielectrics Prepared by RF Sputtering

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概要

• 論文の詳細を見る
• 2012-05-01

著者

• GOTO Yuta

  Graduate School of Advanced Sciences of Matter, Hiroshima University

• MURAKAMI Hideki

  Graduate School of Advanced Sciences of Matter, Hiroshima University

• HIGASHI Seiichiro

  Graduate School of Advanced Sciences of Matter, Hiroshima University

• OHTA Akio

  Graduate School of Advanced Sciences of Matter, Hiroshima University

• Goto Yuta

  Graduate School Of Advanced Sciences Of Matter Hiroshima University

• Ohta Akio

  Graduate School Of Advanced Sciences Of Matter Hiroshima University

• Wei Guobin

  Graduate School Of Advanced Sciences Of Matter Hiroshima University

• Miyazaki Seiichi

  Graduate School Of Advanced Sciences Of Matter Hiroshima University

• Miyazaki Seiichi

  Hiroshima Univ.

• Murakami Hideki

  Graduate School Of Advanced Sciences Of Matter Hiroshima University

• Miyazaki Seiichi

  Graduate School Of Advanced Sciences And Matters Hiroshima University

• Murakami Hideki

  Graduate School Of Advanced Sciences And Matters Hiroshima University

• Higashi Seiichiro

  Department Of Semiconductor Electronics And Integration Science Graduate School Of Advanced Sciences

• Higashi Seiichiro

  Graduate School Of Advanced Sciences Of Matter Hiroshima University

• Miyazaki Seiichi

  Graduate School Of Engineering Nagoya University

• NISHIGAKI Shingo

  Graduate School of Advanced Sciences of Matter, Hiroshima University

• Nishigaki Shingo

  Graduate School Of Advanced Sciences Of Matter Hiroshima University

• Higashi Seiichiro

  Graduate School of Advanced Science of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan

• Miyazaki Seiichi

  Graduate School of Advanced Science and Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan

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