Millisecond Rapid Thermal Annealing of Si Wafer Induced by High-Power-Density Thermal Plasma Jet Irradiation and Its Application to Ultrashallow Junction Formation

概要

論文の詳細を見る
We have investigated the generation of high-power-density thermal plasma jet (TPJ) as a heat source for the annealing of a Si wafer surface in a millisecond period and the formation of an ultrashallow junction. The power density of DC arc discharge thermal plasma jet markedly increased from 11.0 to 32.3 kW/cm2 with increasing spacing between an anode and a cathode ($\mathit{ES}$) from 1.0 to 3.0 mm. The increase in TPJ power density with $\mathit{ES}$ was mainly due to the increase in plasma temperature from about 16000 to 23000 K. By applying this high-power-density TPJ, the Si wafer was heated by more than 700 K within 10 ms. Using this annealing technique, we demonstrated the dopant activation of an arsenic-implanted Si wafer and successfully obtained a low sheet resistance of 262 $\Omega$/sq at an annealing temperature as high as 1207 K without a significantly enhanced diffusion of the implantation profile.
2009-04-25