An Explicit Formula of the Exponential Sums of Digital Sums

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概要

• 論文の詳細を見る
• 1995-10-01

著者

• OKADA Tatsuya

  Department of Mechanical Engineering, Faculty of Engineering, The University of Tokushima

• Okada Tatsuya

  Department Of Mathematics School Of Medicine Fukushima Medical University

• Sekiguchi Takeshi

  Information Science, Liberal Arts, Tohoku Gakuin University

• Yasunobu Shiota

  Information Science Tohoku Gakuin University

• Shiota Yasunobu

  Department Of Mathematics Akita University

• Takeshi Sekiguchi

  Information Science Tohoku Gakuin University

• Sekiguchi Takeshi

  Information Science Liberal Arts Tohoku Gakuin University

関連論文

• Relationship between 〈111〉 Rotation Recrystallization Mechanism and Slip Bands with Compressive Strains during Tensile Deformation in Aluminum Single Crystals
• In-situ Measurement of Temperature Variation in Si Wafer During Millisecond Rapid Thermal Annealing Induced by Thermal Plasma Jet Irradiation
• Rotations Involved in Tensile Deformation and Recrystallization in Fe-11Cr-19Ni Alloy Single Crystal
• Axial Compression and Post-Deformation Annealing of Aluminum Single Crystal
• Tensile Deformation and Recrystallization in Copper Single Crystal and Bicrystal with Schmid Factor of 0.5
• Deformation and Recrystallization of Aluminum Bicrystals Having Asymmetric Tilt Grain Boundary
• Slip Morphology and Recrystallization in Copper Single Crystals Tensile-Deformed along and Direction
• Deformation and Recrystallization in Lightly-Rolled Aluminum Single Crystals of Cube Orientation
• Deformation and Recrystallization of Tensile-deformed or Rolled Fe-3%Si Alloy Single Crystals
• Relationship between Deformation and Recrystallization Structures in Fe-Si Single Crystal and Bicrystal Containing {111} Grain
• Correspondence between Surface Morphological Faults and Crystallographic Defects in 4H-SiC Homoepitaxial Film
• Effect of Cross Slips on Deformation Microstructure and Recrystallization in and Al Single Crystals
• Electron Backscatter Diffraction Analysis of Recrystallized Grains Formed in Deformation Band in Aluminum Single Crystal
• Relationship between Deformation and Recrystallization in Σ3 Isoaxial Aluminum Bicrystal Deformed in Tension along the Axis
• Recrystallization of Tensile-Deformed Fe-11Cr-19Ni Alloy Single Crystal
• Influence of Activated Dislocations on Recrystallization near Grain Boundaries in Coarse-Grained Fe-30Cr Alloy
• Recrystallization Involving Rotation in Fe-11Cr-19Ni Alloy Single Crystal
• Recrystallization Mechanism Involving Rotation in Fe-30Cr Alloy Single Crystal
• Relationship between Active Slip Systems and Orientations of Recrystallized Grains in Fe-30Cr Alloy
• Defect Formation in (0001)- and (1120)-Oriented 4H-SiC Crystals P^+-Implanted at Room Temperature
• Ultrafast Coherent Control of Excitons and Exciton-Polaritons in Quantum Nanostructure
• Ultrafast Coherent Control of Excitons in Quantum Nano-Structures
• Raman Spectroscopic Stress Evaluation of Femtosecond-Laser-Modified Region Inside 4H-SiC
• Log-Normality of Air Contaminants and Its Hidden Characteristics Useful for Industrial Hygiene Technology
• Transmission Electron Microscopy of Sublimation-Grown GaN Single Crystal and GaN Homoepitaxial Film
• L^-theory of noncausal stochastic integrals
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• An Explicit Formula of Subblock Occurrences for the p-Adic Expansion
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• Multifractal Spectrum of Multinomial Measures
• A Generalization of Hata-Yamaguti's Results on the Takagi Function II: Multinomial Case
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• Simultaneous Bilateral Spontaneous Pneumothorax Observed during the Administration of Gefitinib for Lung Adenocarcinoma with Multiple Lung Metastases
• Millisecond Rapid Thermal Annealing of Si Wafer Induced by High-Power-Density Thermal Plasma Jet Irradiation and Its Application to Ultrashallow Junction Formation
• Strain Induced Premelting at Grain Boundaries and Deformation Bands in Copper Bulk Bicrystals
• A linear stochastic integral equation containing the extended Ito integral
• Formation of Low-Defect-Concentration Polycrystalline Silicon Films by Thermal Plasma Jet Crystallization Technique
• Analysis of Transient Temperature Profile During Thermal Plasma Jet Annealing of Si Films on Quartz Substrate
• Crystallization of Si in Millisecond Time Domain Induced by Thermal Plasma Jet Irradiation
• In-situ Measurement of Temperature Variation in Si Wafer during Millisecond Rapid Thermal Annealing Induced by Thermal Plasma Jet Irradiation
• Internal Residual Stress Measurements of Tensile-Deformed Aluminum Single Crystals Using Synchrotron Radiation
• Source of surface morphological defects formed on 4H-SiC homoepitaxial films

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