In-situ Measurement of Temperature Variation in Si Wafer During Millisecond Rapid Thermal Annealing Induced by Thermal Plasma Jet Irradiation
スポンサーリンク
概要
- 論文の詳細を見る
- 2007-09-19
著者
-
MIYAZAKI Seiichi
Hiroshima University
-
OKADA Tatsuya
Department of Mechanical Engineering, Faculty of Engineering, The University of Tokushima
-
MURAKAMI Hideki
Graduate School of Advanced Sciences of Matter, Hiroshima University
-
HIGASHI Seiichiro
Graduate School of Advanced Sciences of Matter, Hiroshima University
-
MURAKAMI Hideki
Department of Geology, Faculty of Science, Kochi University
-
Okada Tatsuya
Department Of Mathematics School Of Medicine Fukushima Medical University
-
Miyazaki Seiichi
Graduate School Of Advanced Sciences Of Matter Hiroshima University
-
Miyazaki Seiichi
Department Of Electrical Engineering Hiroshima University
-
Miyazaki Seiichi
Hiroshima Univ.
-
Murakami Hideki
Graduate School Of Advanced Sciences Of Matter Hiroshima University
-
Murakami Hideki
Department Of Electrical Engineering Graduate School Of Advanced Sciences Of Matter Hiroshima Univer
-
FURUKAWA Hirokazu
Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Science
-
HIGASHI Seiichiro
Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Science
-
KAKU Hirotaka
Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Science
-
Kaku Hirotaka
Graduate School Of Advanced Sciences Of Matter Hiroshima University
-
Miyazaki Seiichi
Graduate School Of Advanced Sciences And Matters Hiroshima University
-
Miyazaki Seiichi
Department Of Electrical Engineering Graduate School Of Advanced Sciences And Matter Hiroshima Unive
-
Murakami Hideki
Department Of Semiconductor Electronics And Integration Science Graduate School Of Advanced Sciences
-
Higashi Seiichiro
Department Of Semiconductor Electronics And Integration Science Graduate School Of Advanced Sciences
-
Furukawa Hirokazu
Department Of Semiconductor Electronics And Integration Science Graduate School Of Advanced Sciences
-
Okada Tatsuya
Department Of Semiconductor Electronics And Integration Science Graduate School Of Advanced Sciences
-
Miyazaki Seiichi
Graduate School Of Engineering Nagoya University
-
Higashi Seiichiro
Department of Electrical Engineering, Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima 739-8530, Japan
-
Kaku Hirotaka
Department of Semiconductor Electronics and Integration Science, Graduate School of Advance Science of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima 739-8530, Japan
-
Miyazaki Seiichi
Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
関連論文
- Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots
- Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories
- Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories(Session4A: Nonvolatile Memory)
- Relationship between 〈111〉 Rotation Recrystallization Mechanism and Slip Bands with Compressive Strains during Tensile Deformation in Aluminum Single Crystals
- Characterization of Mg Diffusion into HfO_2/SiO_2/Si(100) Stacked Structures and Its Impact on Detect State Densities(Session 7A : Gate Oxides)
- The Impact of H_2 Anneal on Resistive Switching in Pt/TiO_2/Pt Structure(Session 2A : Memory 1)
- Characterization of Mg Diffusion into HfO_2/SiO_2/Si(100) Stacked Structures and Its Impact on Detect State Densities(Session 7A : Gate Oxides)
- The Impact of H_2 Anneal on Resistive Switching in Pt/TiO_2/Pt Structure(Session 2A : Memory 1)
- Preliminary report on regional resistivity variation inferred from the Network MT investigation in the Shikoku district, southwestern Japan
- Total en bloc spondylectomy for spinal metastases
- Recapping T-saw laminocostotransversoplasty for ventral meningiomas in the thoracic region
- Circumspinal decompression with dekyphosis stabilization for thoracic OPLL
- Finite-element analysis on closing-opening correction osteotomy for angular kyphosis of osteoporotic vertebral fractures
- Invasive features of spinal osteosarcoma obtained from whole-mount sections of total en bloc spondylectomy
- Total en bloc spondylectomy for spinal tumors : improvement of the technique and its associated basic background
- The Transmission of Stress to Grafted Bone Inside a Titanium Mesh Cage Used in Anterior Column Reconstruction After Total Spondylectomy : A Finite-Element Analysis
- Influence on Spinal Cord Blood Flow and Function by Interruption of Bilateral Segmental Arteries at Up to Three Levels : Experimental Study in Dogs
- Influence of Acute Shortening on the Spinal Cord : An Experimental Study
- Letters to the Editor
- Interruption of the Bilateral Segmental Arteries at Several Levels : Influence on Vertebral Blood Flow
- Reconstruction After Total Sacrectomy Using a New Instrumentation Technique : A Biomechanical Comparison
- Biomechanical evaluation of reconstructed lumbosacral spine after total sacrectomy
- Letters
- Mechanical Evaluation of Reconstructed Structures after Total Sacrectomy and Their Improvement
- Anterior lumbar interbody fusion using two standard cylindrical threaded cages, a single mega-cage, or dual nested cages : a biomechanical comparison
- Closing-Opening Wedge Osteotomy to Correct Angular Kyphotic Deformity by a Single Posterior Approach
- Surgical Strategy for Spinal Metastases
- In-situ Measurement of Temperature Variation in Si Wafer During Millisecond Rapid Thermal Annealing Induced by Thermal Plasma Jet Irradiation
- Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal-Gate Capacitors(Ultra-Thin Gate Insulators,Fundamentals and Applications of Advanced Semiconductor Devices)
- Melting and Solidification of Microcrystalline Si Films Induced by Semiconductor Diode Laser Irradiation
- Characterization of Germanium Nanocrystallites Grown on SiO_2 by a Conductive AFM Probe Technique(Nanomaterials and Quantum-Effect Devices, Fundamental and Application of Advanced Semiconductor Devices)
- Characterization of Atom Diffusion in Polycrystalline Si/SiGe/Si Stacked Gate(Si Devices and Processes, Fundamental and Application of Advanced Semiconductor Devices)
- Application of Plasma Jet Crystallization Technique to Fabrication of Thin-Film Transistor
- Characterization of Interfacial Oxide Layers in Heterostructures of Hafnium Oxides Formed on NH_3-Nitrided Si(100)
- Impact of Rapid Thermal O_2 Anneal on Dielectric Stack Structures of Hafnium Aluminate and Silicon Dioxide Formed on Si(100)
- Spontaneous Occlusion of Ruptured Vertebral Artery Dissection at the Extradural Fenestration Associated with Extradural Origin of the Posterior Inferior Cerebellar Artery : Case Report
- Occlusive Cerebrovasculopathy after Internal Radiation and Bleomycin Therapy for Craniopharyngioma : Case Report
- Successful Removal of Meningioma of the Pineal Region after Embolization
- Cerebellar Infarction with Hydrocephalus Caused by Spontaneous Extracranial Vertebral Artery Dissection : Case Report
- Overcoming the Immune Response to Permit Ex Vivo Gene Therapy for Spine Fusion With Human Type 5 Adenoviral Delivery of the LIM Mineralization Protein-1 cDNA
- Delivery of Recombinant Human Bone Morphogenetic Protein-2 Using a Compression-Resistant Matrix in Posterolateral Spine Fusion in the Rabbit and in the Non-Human Primate
- Rotations Involved in Tensile Deformation and Recrystallization in Fe-11Cr-19Ni Alloy Single Crystal
- Axial Compression and Post-Deformation Annealing of Aluminum Single Crystal
- Tensile Deformation and Recrystallization in Copper Single Crystal and Bicrystal with Schmid Factor of 0.5
- Deformation and Recrystallization of Aluminum Bicrystals Having Asymmetric Tilt Grain Boundary
- Slip Morphology and Recrystallization in Copper Single Crystals Tensile-Deformed along and Direction
- Deformation and Recrystallization in Lightly-Rolled Aluminum Single Crystals of Cube Orientation
- Deformation and Recrystallization of Tensile-deformed or Rolled Fe-3%Si Alloy Single Crystals
- Relationship between Deformation and Recrystallization Structures in Fe-Si Single Crystal and Bicrystal Containing {111} Grain
- Correspondence between Surface Morphological Faults and Crystallographic Defects in 4H-SiC Homoepitaxial Film
- Effect of Cross Slips on Deformation Microstructure and Recrystallization in and Al Single Crystals
- Electron Backscatter Diffraction Analysis of Recrystallized Grains Formed in Deformation Band in Aluminum Single Crystal
- Relationship between Deformation and Recrystallization in Σ3 Isoaxial Aluminum Bicrystal Deformed in Tension along the Axis
- Recrystallization of Tensile-Deformed Fe-11Cr-19Ni Alloy Single Crystal
- Influence of Activated Dislocations on Recrystallization near Grain Boundaries in Coarse-Grained Fe-30Cr Alloy
- Recrystallization Involving Rotation in Fe-11Cr-19Ni Alloy Single Crystal
- Recrystallization Mechanism Involving Rotation in Fe-30Cr Alloy Single Crystal
- Relationship between Active Slip Systems and Orientations of Recrystallized Grains in Fe-30Cr Alloy
- Charging and Discharging Characteristics of Stacked Floating Gates of Silicon Quantum Dots(Nanomaterials and Quantum-Effect Devices, Fundamental and Application of Advanced Semiconductor Devices)
- Carrier Depletion Effect in the n^+Poly-Si Gate Side-Wall/SiO_2 Interfaces as Evaluated by Gate Tunnel Leakage Current : Semiconductors
- Memory Operation of Silicon Quantum-Dot Floating-GateMetal-Oxide-Semiconductor Field-Effect Transistors : Semiconductors
- Experimental Evidence of Carrier Depletion Effect near n^+Poly-Si Gate Side
- Charging States of Si Quantum Dots as Detected by AFM/Kelvin Probe Technique
- Defect Formation in (0001)- and (1120)-Oriented 4H-SiC Crystals P^+-Implanted at Room Temperature
- Comprehensive Understanding of PBTI and NBTI reliability of High-k / Metal Gate Stacks with EOT Scaling to sub-1nm
- Mechanism of Threshold Voltage Reduction and Hole Mobility Enhancement in pMOSFETs Employing Sub-1nm EOT HfSiON by Use of Substrate Fluorine Ion Implantation
- Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots
- Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots
- Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots
- Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories
- Electrical Properties of Highly Crystallized Ge : H Thin Films Grown from VHF Inductively-Coupled Plasma of H_2-diluted GeH_4(Session9A: Silicon Devices IV)
- Electrical Properties of Highly Crystallized Ge : H Thin Films Grown from VHF Inductively-Coupled Plasma of H_2-diluted GeH_4(Session9A: Silicon Devices IV)
- Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories(Session4A: Nonvolatile Memory)
- Progress on Charge Distribution in Multiply-Stacked Si Quantum Dots/SiO_2 Structure as Evaluated by AFM/KFM
- Ultrafast Coherent Control of Excitons and Exciton-Polaritons in Quantum Nanostructure
- Ultrafast Coherent Control of Excitons in Quantum Nano-Structures
- Evaluation of Electronic Defect States at Poly-Si/HfO_2 interface by Photoelectron Yield Spectroscopy
- Raman Spectroscopic Stress Evaluation of Femtosecond-Laser-Modified Region Inside 4H-SiC
- Special Section on High-κ Gate Dielectrics
- Electrical Characterization of Aluminum-Oxynitride Stacked Gate Dielectrics Prepared by a Layer-by-Layer Process of Chemical Vapor Deposition and Rapid Thermal Nitridation(Si Devices and Processes, Fundamental and Application of Advanced
- Formation of High Crystallinity Silicon Films by High Speed Scanning of Melting Region Formed by Atmospheric Pressure DC Arc Discharge Micro-Thermal-Plasma-Jet and Its Application to Thin Film Transistor Fabrication
- Transmission Electron Microscopy of Sublimation-Grown GaN Single Crystal and GaN Homoepitaxial Film
- An Explicit Formula of the Newman-Coquet Exponential Sum
- An Explicit Formula of the Newman-Coquet Exponential Sum
- Power and exponential sums of digital sums with information per digits
- Power and exponential sums of digital sums with information per digits
- An Explicit Formula of Subblock Occurrences for the p-Adic Expansion
- An Explicit Formula of Subblock Occurrences for the p-Adic Expansion
- Digital Sum Problems for the p-adic Expansion of Natural Numbers
- Digital Sum Problems for the p-adic Expansion of Natural Numbers
- A Generalization of Hata-Yamaguti's Results on the Takagi Function II: Multinomial Case
- An Explicit Formula of the Exponential Sums of Digital Sums
- An Explicit Formula of the Exponential Sums of Digital Sums
- Simultaneous Bilateral Spontaneous Pneumothorax Observed during the Administration of Gefitinib for Lung Adenocarcinoma with Multiple Lung Metastases
- Impact of Annealing Ambience on Resistive Switching on Pt/TiO_2/Pt Structure
- Characterization of Mg Diffusion into HfO_2/SiO_2/Si(100) Stacked Structures and Its Impact on Detect State Densities
- Characterization of Resistance-Switching of Si Oxide Dielectrics Prepared by RF Sputtering
- Evaluation of Chemical Composition and Bonding Features of Pt/SiOx/Pt MIM Diodes and Its Impact on Resistance Switching Behavior
- Internal Residual Stress Measurements of Tensile-Deformed Aluminum Single Crystals Using Synchrotron Radiation
- Characterization of Resistance-Switching of Si Oxide Dielectrics Prepared by RF Sputtering