Transmission Electron Microscopy of Sublimation-Grown GaN Single Crystal and GaN Homoepitaxial Film

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1996-10-15

著者

• NAOI Yoshiki

  Department of Electrical and Electronic Engineering, The University of Tokushima,

• KURAI Satoshi

  Graduate School of Science and Engineering, Yamaguchi University

• INOKO Fukuji

  The University of Tokushima

• OKADA Tatsuya

  Department of Mechanical Engineering, Faculty of Engineering, The University of Tokushima

• SAKAI Shiro

  Department of Electrical and Electronic Engineering, University of Tokushima

• Inoko F

  The University Of Tokushima

• Inoko Fukuji

  Department Of Mechanical Engineering Tokushima University

• Kurai Satoshi

  Science And Engineering Yamaguchi University

• Okada Tatsuya

  Department Of Mathematics School Of Medicine Fukushima Medical University

• KURAI Satoshi

  Department of Electrical and Electronic Engineering, University of Tokushima

• NISHINO Katsushi

  Department of Electrical and Electronic Engineering, University of Tokushima

• Sakai Shiro

  Department Of Electrical And Electronic Engineering The University Of Tokushima

• Nishino K

  Department Of Electrical And Electronic Engineering The University Of Tokushima

• Nishino K

  Department Of Electronic Science And Engineering Kyoto University

• Nishino Katsushi

  Department Of Electrical And Electronic Engineering The University Of Tokushima

• Naoi Y

  Univ. Tokushima Tokushima Jpn

• Naoi Yoshiki

  Department Of Electrical And Electronic Engineering The University Of Tokushima

• Kurai Satoshi

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Yamaguchi University

• Kurai Satoshi

  Department Of Electrical And Electronic Engineering Tokushima University

• Inoko Fukuji

  Detartment Of Mechanical Engineering Tokushima University

• Okada Tatsuya

  Department Of Mechanical Engineering Tokushima University

• Inoko Fukuji

  Department Of Mechanical Engineering Faculty Of Engineering Tokushima University

• Sakai Shiro

  Department Of Electrical And Computer Engineering Nagoya Institute Of Technology

• Naoi Yoshiki

  Department of Electrical and Electronic Engineering, The University of Tokushima

関連論文

• Development of White Light Emitting Diodes by Multi-layered Red, Green, and Bule Phosphors Excited by Near-ultraviolet Light Emitting Diodes
• Near-ultraviolet LED of the External Quantum Efficiency Over 45% and its Application to High-color Rendering Phosphor Conversion White LEDs
• High-Temperature Stability of Copper-Gate AlGaN/GaN High Electron Mobility Transistors(Heterostructure Microelectronics with TWHM2003)
• Relationship between 〈111〉 Rotation Recrystallization Mechanism and Slip Bands with Compressive Strains during Tensile Deformation in Aluminum Single Crystals
• Influence of Pyramidal Defects on Photoluminescence of Mg-doped AlGaN/GaN Superlattice Structures
• High-Performance 348 nm AlGaN/GaN-Based Ultraviolet-Light-Emitting Diode with a SiN Buffer Layer
• V-Shaped Defects in AlGaN/GaN Superlattices Grown on Thin Undoped-GaN Layers on Sapphire Substrate : Surfaces, interfaces, and Films
• Influence of Inversion Domains on Formation of V-Shaped Pits in GaN Films : Surfaces, Interfaces, and Films
• GaAs / AlGaAs Light Emitters Fabricated on Undercut GaAs on Si
• Thermal Stress and Dislocation Density in Undercut GaAs on Si
• Photoluminescence Dark Spot Dynamics in GaAs Grown on Si
• Stable Operation of AlGaAs/GaAs Light-Emitting Diodes Fabricated on Si Substrate
• Zinc Diffusion in Al_Ga_As Grown on Si Substrate
• A New Reactor for Metalorganic Chemical Vapor Deposition Equipped with an Internal Rotary Flow Selector
• Investigation on the P-Type Activation Mechanism in Mg-doped GaN Films Grown by Metalorganic Chemical Vapor Deposition
• Comparison and Investigation of Ohmic Characteristics in the Ni/AuZn and Cr/AuZn Metal Schemes
• Comparison and Investigation of Ohmic Characteristics in Ni/AuZn and Cr/Auzn to p-GaN
• Optimization Process in the P-Type Activation and Its Relationship with the Defects Structure in Mg-Doped p-GaN
• Ohmic Contact to P-Type GaN
• Structures for Thermal Stress Reduction in GaAs Layers Grown on Si Substrate
• Stress Distribution Analysis in Structured GaAs Layers Fabricated on Si Substrates
• Tight-Binding Calculation of Electronic Structures of InNAs Ordered Alloys
• Electronic Structure of GaP_N_x Alloys Determined Using Pseudopotentials and Gaussian Orbitals
• Electronic Structures of Wurtzite GaN, InN and Their Alloy Ga_In_xN Calculated by the Tight-Binding Method
• Valence-Band-Edge Energy of Group-III Nitride Alloy Semiconductors
• Effect of Growth Temperature on InGaAsP/GaAsP Expitaxial Growth
• Crosshatch Pattern on InGaAsP Layers Grown on GaAs_P_ Substrate by LPE
• Meltback of GaAs_P_ Substrate in LPE Growth of InGaAsP
• LPE Growth of In_ Ga_xAs_P_y on GaAs_P_
• Room Temperature Operation of Visible (λ=658.6 nm) InGaAsP DH Laser Diodes on GaAsP
• Visible InGaP / GaAsP Dual Wavelength Light Emitting Diodes
• New Wavelength-Demultiplexing InGaAsP/InP Photodiodes : III-4: III-V COMPOUND SOLAR CELLS AND DETECTORS
• Measurement of Diffusion Coefficient and Surface Recombination Velocity for p-InGaAsP Grown on InP
• InGaAsP/InP Native Oxide Stripe Lasers
• InGaAsP/InP Double-Heterostructure Photodiodes
• In-situ Measurement of Temperature Variation in Si Wafer During Millisecond Rapid Thermal Annealing Induced by Thermal Plasma Jet Irradiation
• Role of Dislocation in InGaN Phase Separation
• Direct Evidence that Dislocations are Non-Radiative Recombination Centers in GaN
• Study of Threading Dislocations in Wurtzite GaN Films Grown on Sapphire by Metalorganic Chemical Vapor Deposition
• Surface Pretreatment of Bulk GaN for Homoepitaxial Growth by Metalorganic Chemical Vapor Deposition
• Fabrication of High-Output-Power AlGaN/GaN-Based UV-Light-Emitting Diode Using a Ga Droplet Layer
• Dislocation Reduction in GaN Epilayers Grown on a GaNP Buffer on Sapphire Substrate by Metalorganic Chemical Vapor Deposition : Surfaces, Interfaces, and Films
• Rotations Involved in Tensile Deformation and Recrystallization in Fe-11Cr-19Ni Alloy Single Crystal
• Axial Compression and Post-Deformation Annealing of Aluminum Single Crystal
• Tensile Deformation and Recrystallization in Copper Single Crystal and Bicrystal with Schmid Factor of 0.5
• Deformation and Recrystallization of Aluminum Bicrystals Having Asymmetric Tilt Grain Boundary
• Slip Morphology and Recrystallization in Copper Single Crystals Tensile-Deformed along and Direction
• Deformation and Recrystallization in Lightly-Rolled Aluminum Single Crystals of Cube Orientation
• Deformation and Recrystallization of Tensile-deformed or Rolled Fe-3%Si Alloy Single Crystals
• Relationship between Deformation and Recrystallization Structures in Fe-Si Single Crystal and Bicrystal Containing {111} Grain
• Correspondence between Surface Morphological Faults and Crystallographic Defects in 4H-SiC Homoepitaxial Film
• Effect of Cross Slips on Deformation Microstructure and Recrystallization in and Al Single Crystals
• Electron Backscatter Diffraction Analysis of Recrystallized Grains Formed in Deformation Band in Aluminum Single Crystal
• Relationship between Deformation and Recrystallization in Σ3 Isoaxial Aluminum Bicrystal Deformed in Tension along the Axis
• Recrystallization of Tensile-Deformed Fe-11Cr-19Ni Alloy Single Crystal
• Influence of Activated Dislocations on Recrystallization near Grain Boundaries in Coarse-Grained Fe-30Cr Alloy
• Recrystallization Involving Rotation in Fe-11Cr-19Ni Alloy Single Crystal
• Recrystallization Mechanism Involving Rotation in Fe-30Cr Alloy Single Crystal
• Relationship between Active Slip Systems and Orientations of Recrystallized Grains in Fe-30Cr Alloy
• Recrystallization Behavior at Deformation Bands inAluminum Single Crystals
• Deformed Structure and Crystal Orientation at Deformation Bands inAluminum Single Crystals
• Dependence of Light Extraction From Near-Ultraviolet Light-Emitting Diodes on Refraction Index, Transmittance and Shape
• Defect Formation in (0001)- and (1120)-Oriented 4H-SiC Crystals P^+-Implanted at Room Temperature
• GaAlAs/ GaAs TJS Lasers on Si Substrates Operating at Room Temperature Fabricated by MOCVD
• Compositional Inhomogeneity of InGaN Grown on Sapphire and Bulk GaN Substrates by Metalorganie Chemical Vapor Deposition
• X-Ray Diffraction Analysis of GaN and GaN/InGaN/GaN Double-Hetero Structures Grown on Sapphire Substrate by Metalorganic Chemical Vapor Deposition
• Electron Microscopic Study on the Initial Stages of (111)-Oriented Diamonds Grown on Pt Substrates
• Study on the Luminous and Thermal Characteristics of High-Power Near-Ultraviolet LED Packages with Various Chip Arrangements
• Development of Light Sources by Large-Scale Integrated Light-Emitting Diodes
• Analysis of Chip/Bump/Ceramic Interface of Flip-Chip Bonded LED Directly on Ceramic Packages
• Al_Ga_N Film Using Middle-Temperature Intermediate Layer Grown on (0001) Sapphire Substrate by Metal-Organic Chemical Vapor Deposition
• Optical Properties of Bound Excitons and Biexcitons in GaN(Special Issue on Blue Laser Diodes and Related Devices/Technologies)
• Excitonic Emissions under High Excitation of Hexagonal GaN Single Crystal Grown by Sublimation Method
• Ultrafast Coherent Control of Excitons and Exciton-Polaritons in Quantum Nanostructure
• Ultrafast Coherent Control of Excitons in Quantum Nano-Structures
• Growth of Bulk Gan Single Crystals by the Pressure-Controlled Solution Growth Method
• Developments of GaN Bulk Substrates for GaN Based LEDs and LDs(Special Issue on Blue Laser Diodes and Related Devices/Technologies)
• Growth of Bulk GaN Single Crystals by the Pressure-Controlled Solution Growth Method
• Raman Spectroscopic Stress Evaluation of Femtosecond-Laser-Modified Region Inside 4H-SiC
• Optical Properties of ZnCdS:I Orange and ZnSTe:I White Thin Film Phosphor for High Ra White LED
• Effect of Cooling Process after GaN Epitaxial Growth by Radio-Frequency Molecular Beam Epitaxy : Semiconductors
• Effect of GaNP Buffer Layer on AlGaN Epilayers Deposited on (0001) Sapphire Substrates by Metalorganic Chemical Vapor Deposition
• Nucleation Control in the Growth of Bulk GaN by Sublimation Method
• Transmission Electron Microscopy of Sublimation-Grown GaN Single Crystal and GaN Homoepitaxial Film
• Growth and Characterization of Thick GaN by Sublimation Method and Homoepitaxial Growth by Metalorganic Chemical Vapor Deposition
• Photopumped Stimulated Emission from Homoepitaxial GaN Grown on Bulk GaN Prepared by Sublimation Method
• Fabrication and Illuminance Properties of Phosphor-conversion Green Light-emitting Diode with a Luminous Efficacy over 100 lm/W
• An Explicit Formula of the Newman-Coquet Exponential Sum
• An Explicit Formula of the Newman-Coquet Exponential Sum
• Power and exponential sums of digital sums with information per digits
• Power and exponential sums of digital sums with information per digits
• An Explicit Formula of Subblock Occurrences for the p-Adic Expansion
• An Explicit Formula of Subblock Occurrences for the p-Adic Expansion
• Digital Sum Problems for the p-adic Expansion of Natural Numbers
• Digital Sum Problems for the p-adic Expansion of Natural Numbers
• A Generalization of Hata-Yamaguti's Results on the Takagi Function II: Multinomial Case
• An Explicit Formula of the Exponential Sums of Digital Sums
• An Explicit Formula of the Exponential Sums of Digital Sums
• Simultaneous Bilateral Spontaneous Pneumothorax Observed during the Administration of Gefitinib for Lung Adenocarcinoma with Multiple Lung Metastases
• Internal Residual Stress Measurements of Tensile-Deformed Aluminum Single Crystals Using Synchrotron Radiation

もっと見る 閉じる

スポンサーリンク