Stable Operation of AlGaAs/GaAs Light-Emitting Diodes Fabricated on Si Substrate

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1992-02-01

著者

• FUKUI Masuo

  Department of Optical Science and Technology, Faculty of Engineering, The University of Tokushima

• Wada Naoki

  Department of Applied Chemistry, The University of Tokyo

• SAKAI Shiro

  Department of Electrical and Electronic Engineering, University of Tokushima

• Sakai S

  Tokushima Univ. Tokushima Jpn

• Sakai S

  Department Of Electric And Computer Engineering Nagoya Institute Of Technology

• Sakai S

  Department Of Electrical And Electronic Engineering The University Of Tokushinna

• Sakai S

  Electrotechnical Lab. Ibaraki

• Wada Naoki

  Department Of Electrical And Electronic Engineering Tokushima University

• Wada Naoki

  Department Of Electrical Engineering And Electronics College Of Engineering Osaka Sangyo University

• Wada Naoki

  Department Of Electric And Electronic Engineering University Of Tokushima:matsushita Kotobuki Electr

• Wada Naoki

  Department Of Applied Chemistry The University Of Tokyo

• YOSHIMI Shinichi

  Department of Electrical and Electronic Engineering, Tokushima University

• SHAO Chun

  Department of Electrical and Electronic Engineering, Tokushima University

• Sakai Shiro

  Graduate School Of Engineering The University Of Tokushima

• Sakai Shiro

  Department Of Electrical And Electronic Engineering The University Of Tokushima

• Sakai S

  Faculty Of Education Shinshu University:(present Address)department Of Materials Science And Chemica

• Shintani Yoshihiro

  Department Of Electrical And Electronic Engineering Tokushima University

• Shao Chun

  Research Center For Nano-device And System Nagoya Institute Of Technology

• Shao Chun

  Department Of Electrical And Electronic Engineering Tokushima University:textile Engineering Institu

• Yoshimi S

  Tokushima Univ. Tokushima

• Fukui Masuo

  Department Of Electrical And Electronic Engineering Tokushima University

• Fukui Masuo

  Department Of Electrical And Electronic Engineering Faculty Of Engineering The University Of Tokushi

• Shintani Y

  Department Of Electrical And Electronic Engineering Tokushima University

• Sakai Shiro

  Department Of Electrical And Computer Engineering Nagoya Institute Of Technology

関連論文

• Optical Modes in Two-dimensionally Ordered Dielectric Spheres
• Interaction of Near-Field Light with Ordered Polystyrene Spheres : Experimental Studies
• Determination of the Anisotropic Optical Constant of Evaporated Polydiacetylene-C_4UC_4 Films at 632.8 nm
• Cloning and Nucleotide Sequence of the Gene Encoding Dimethyl Sulfoxide Reductase from Rhodobacter sphaeroides f. sp. denitrificans
• Influence of Pyramidal Defects on Photoluminescence of Mg-doped AlGaN/GaN Superlattice Structures
• High-Performance 348 nm AlGaN/GaN-Based Ultraviolet-Light-Emitting Diode with a SiN Buffer Layer
• V-Shaped Defects in AlGaN/GaN Superlattices Grown on Thin Undoped-GaN Layers on Sapphire Substrate : Surfaces, interfaces, and Films
• Influence of Inversion Domains on Formation of V-Shaped Pits in GaN Films : Surfaces, Interfaces, and Films
• Case of hypoparathyroidism, deafness and renal dysplasia (HDR) syndrome associated with nephrocalcinosis and distal renal tubular acidosis
• GaAs / AlGaAs Light Emitters Fabricated on Undercut GaAs on Si
• Thermal Stress and Dislocation Density in Undercut GaAs on Si
• Photoluminescence Dark Spot Dynamics in GaAs Grown on Si
• Stable Operation of AlGaAs/GaAs Light-Emitting Diodes Fabricated on Si Substrate
• Zinc Diffusion in Al_Ga_As Grown on Si Substrate
• A New Reactor for Metalorganic Chemical Vapor Deposition Equipped with an Internal Rotary Flow Selector
• Investigation on the P-Type Activation Mechanism in Mg-doped GaN Films Grown by Metalorganic Chemical Vapor Deposition
• Comparison and Investigation of Ohmic Characteristics in the Ni/AuZn and Cr/AuZn Metal Schemes
• Comparison and Investigation of Ohmic Characteristics in Ni/AuZn and Cr/Auzn to p-GaN
• Optimization Process in the P-Type Activation and Its Relationship with the Defects Structure in Mg-Doped p-GaN
• Ohmic Contact to P-Type GaN
• Structures for Thermal Stress Reduction in GaAs Layers Grown on Si Substrate
• Stress Distribution Analysis in Structured GaAs Layers Fabricated on Si Substrates
• Tight-Binding Calculation of Electronic Structures of InNAs Ordered Alloys
• Electronic Structure of GaP_N_x Alloys Determined Using Pseudopotentials and Gaussian Orbitals
• Electronic Structures of Wurtzite GaN, InN and Their Alloy Ga_In_xN Calculated by the Tight-Binding Method
• Valence-Band-Edge Energy of Group-III Nitride Alloy Semiconductors
• Effect of Growth Temperature on InGaAsP/GaAsP Expitaxial Growth
• Crosshatch Pattern on InGaAsP Layers Grown on GaAs_P_ Substrate by LPE
• Meltback of GaAs_P_ Substrate in LPE Growth of InGaAsP
• LPE Growth of In_ Ga_xAs_P_y on GaAs_P_
• Room Temperature Operation of Visible (λ=658.6 nm) InGaAsP DH Laser Diodes on GaAsP
• Visible InGaP / GaAsP Dual Wavelength Light Emitting Diodes
• Single ventricle repair in children with Down's syndrome
• Arterial Switch Operation Using Aortic Homograft for Transposition of the Great Arteries with Pulmonary Regurgitation
• Mitral Valve Replacement in Children under 3 Years of Age
• New Wavelength-Demultiplexing InGaAsP/InP Photodiodes : III-4: III-V COMPOUND SOLAR CELLS AND DETECTORS
• Measurement of Diffusion Coefficient and Surface Recombination Velocity for p-InGaAsP Grown on InP
• InGaAsP/InP Native Oxide Stripe Lasers
• InGaAsP/InP Double-Heterostructure Photodiodes
• Role of Dislocation in InGaN Phase Separation
• Direct Evidence that Dislocations are Non-Radiative Recombination Centers in GaN
• Study of Threading Dislocations in Wurtzite GaN Films Grown on Sapphire by Metalorganic Chemical Vapor Deposition
• Surface Pretreatment of Bulk GaN for Homoepitaxial Growth by Metalorganic Chemical Vapor Deposition
• Fabrication of High-Output-Power AlGaN/GaN-Based UV-Light-Emitting Diode Using a Ga Droplet Layer
• Ross Procedure in an Infant Weighing 4.5kg : Eight years Follow-up
• Dislocation Reduction in GaN Epilayers Grown on a GaNP Buffer on Sapphire Substrate by Metalorganic Chemical Vapor Deposition : Surfaces, Interfaces, and Films
• New Plasmon Waveguides Composed of Twin Metal Wedges with a Nano Gap
• Infliximab-Associated Lymphoproliferative Disorders
• GaAlAs/ GaAs TJS Lasers on Si Substrates Operating at Room Temperature Fabricated by MOCVD
• Effect of Oxygen on the Activation of Mg Acceptor in GaN Epilayers Grown by Metalorganic Chemical Vpor Deposition
• Numerical Analysis of Optical Modes In Two-Dimensionally Ordered Polystyrene Spheres in Attenuated Total Reflection Geometry
• Selective MOCVD Growth of GaAs on Si Substrate with Superlattice Intermediate Layers
• Band Gap Energy and Stress of GaAs Grown on Si by MOCVD
• Deep Levels in GaAs Grown Using Superlattice Intermediate Layers on Si Substrates by MOCVD
• MOCVD Growth of GaAs_P_x (x=0-1) and Fabrication of GaAs_P_ LED on Si Substrate
• MOCVD Growth of GaAs_P_ on Si Substrate
• AlGaAs/GaAs DH Lasers on Si Substrates Grown Using Super Lattice Buffer Layers by MOCVD
• Mechnism of MOCVD Growth for GaAs and AlAs
• Solid Composition and Growth Rate of Ga_Al_xAs Grown Epitaxially by MOCVD
• Ellipsometric Studies on Sputter-Damaged Layer in n-InP
• Surface Flatness of Transparent Conducting ZnO:Ga Thin Films Grown by Pulsed Laser Deposition
• Transparent Conducting Al-Doped ZnO Thin Films Prepared by Pulsed Laser Deposition
• Long-Range Surface Plasmon Polaritons in Metal Films Bounded by Similar-Refractive-Index Materials
• Experimental Observation of Long-Range Surface Plasmon Polaritons
• ATR Mode of Surface Polaritons
• Surface Roughness Effect on Raman Scattering from Surface Polaritons
• Characteristics of Whispering Gallery Modes in Single Dielectric Spheroid Excited by Gaussian Beam
• Light Intensity Enhancement and Optical Nonlinear Response due to Localized Surface Plasmons in Nanosize Ag Sphere
• Evaluation of Band-Gap Energies and Characterization of Nonradiative Recombination Centers of Film and Bulk GaN Crystals
• Characteristics of an Optical Filter Composed of Two Vertically Coupled Microring Resonators(Optoelectronics)
• Temperature Dependence of Photothermal Divergence Signal of GaAs
• Analysis of Nonlinear Excitation and Detection of Surface Magnon Polaritons
• ATR Mode of Multiple Surface Plasmon Polaritons Otto Configuration
• Surface Plasmon Polaritons in Attenuated Total Reflection Geometry
• Optical Filtering by Microring Resonators
• Propagation Length of Surface Plasmon Polaritons Propagating along Air-Metal Interface
• Surface Optic Waves in Ultrathin Films Bounded by Identical Slightly Lossy Materials
• Studies on Surface Polaritons in Ultrathin Films Sandwiched by Identical Dielectrics
• Surface Plasmon Polaritons on n^+-Type Si Single Crystal
• Surface Polaritons Due to the Folded Optical Phonons in GaAs/AlAs Superlattices
• Current Oscillation in CdS Non-Uniformly Illuminated by 4600 Å Light
• Finite-Difference Time-Domain Analysis on Nonlinear Fabry-Perot Resonator in Optical Waveguide Geometry
• ATR Mode of Surface Exciton Polaritons in ZnO Thin Film
• Dispersion Relation of Cl-Surface Exciton Polaritons in Anisotropic ZnO
• Microwave Conductivity and Relaxation of Excess Phonons in CdS
• Self-Modulation of Scattering Intensity from a Silica Sphere Coated with a Sol-Gel Film Doped with J-Aggregates
• Mechanism of Off-Axis Domain Formation and Current Anomaly in Semiconducting CdS
• Light Emission Associated with High Field Domains in Semiconducting CdS
• Correction to "Reflection from Anode Side and Decay of High Field Domain in Semiconducting CdS"
• Reflection from Anode Side and Decay of High Field Domain in Semiconducting CdS
• Electron Drift Mobility and One Criterion on Surface Wave Amplification in Photoconducting CdS
• Acoustoelectric Current Oscillations and Domain Motions in Photoconducting CdS with Shaded Anode Portion
• Determination of Second-Order Nonlinear Optical Susceptibility of GaN Films on Sapphire
• Photoreflectance Spectra from GaAs Buffer Layer of GaAs/AlAs Multiple Quantum Well/GaAs Buffer/GaAs Substrate
• Degradation Mechanism of Au/AlO_x/Al Tunnel Junction
• Temperature Dependence of the Thermal Conductivity and Phonon Scattering Time of a Bulk GaN Crystal
• Selvedge Treatment of the Aluminum and Silver Bilayer System
• Attenuated Total Reflection Spectra of the Aluminum and Silver Bilayer
• Bilateral pulmonary artery banding for hypoplastic left heart syndrome and related anomalies
• Lifetime of Optical Modes in Two Dimensionally Ordered Spheres(Optics and Quantum Electronics)

もっと見る 閉じる

スポンサーリンク