Sakai S | Tokushima Univ. Tokushima Jpn
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概要
関連著者
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Sakai S
Tokushima Univ. Tokushima Jpn
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Sakai Shiro
Graduate School Of Engineering The University Of Tokushima
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Sakai S
Department Of Electrical And Electronic Engineering The University Of Tokushinna
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Sakai S
Department Of Electric And Computer Engineering Nagoya Institute Of Technology
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Sakai S
Faculty Of Education Shinshu University:(present Address)department Of Materials Science And Chemica
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Sakai S
Electrotechnical Lab. Ibaraki
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SAKAI Shiro
Department of Electrical and Electronic Engineering, University of Tokushima
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Sakai Shiro
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Sakai S
Electrotechnical Lab. Ibaraki Jpn
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Sakai S
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Sakai S
Department Of Electrical And Electronic Engineering Tokushima University
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Umeno Masayoshi
Department Of Electric And Computer Engineering Nagoya Institute Of Technology
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UMENO Masayoshi
Department of electrical and Computer Engineering, Nagoya Institute of Technology
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Umeno M
Fukui Univ. Technol. Fukui Jpn
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Sakai Shigeki
Electrotechnical Laboratory
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SOGA Tetsuo
Department of Frontier Materials, Nagoya Institute of Technology
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Soga Tetsuo
Department Of Electronics Faculty Of Engineering Nagoya University
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Soga T
Nagoya Inst. Technol. Nagoya Jpn
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Soga Takashi
Central Research Laboratory Hitachi Limited
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Wada Naoki
Department Of Electrical And Electronic Engineering Tokushima University
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Wada Naoki
Department Of Electrical Engineering And Electronics College Of Engineering Osaka Sangyo University
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Wada Naoki
Department Of Electric And Electronic Engineering University Of Tokushima:matsushita Kotobuki Electr
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Wada Naoki
Department of Applied Chemistry, The University of Tokyo
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Wada Naoki
Department Of Applied Chemistry The University Of Tokyo
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Fujii Syuitsu
Adtec Co. Ltd.
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Fujii Sadao
Central Research Laboratory Kanegafuchi Chemical Industry Co.
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Fujii S
Matsushita Electronics Corp. Kyoto Jpn
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NAOI Yoshiki
Department of Electrical and Electronic Engineering, The University of Tokushima,
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Kato K
Shizuoka Johoku Senior High School Shizuoka Jpn
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Kasai Y
Electrotechnical Laboratory
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Yang Tao
Department Of Electrical And Electronic Engineering The University Of Tokushinna
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FUKUI Masuo
Department of Optical Science and Technology, Faculty of Engineering, The University of Tokushima
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AKOH Hiroshi
Electrotechical Laboratory (ETL)
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Huang X
Nanjing Univ. Nanjing Chn
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HATTORI Shuzo
Department of Electrical and Computer Engineering, Nagoya Institute of Technology
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NAKAJIMA Sadanojo
Department of Electrical and Electronic Engineering, The University of Tokushinna
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FUJII Sadao
Department of Electric and Computer Engineering, Nagoya Institute of Technology
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Sugahara Tomoya
The Authors Are With The Department Of Electrical And Electronic Engineering University Of Tokushima
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Sugahara T
The Authors Are With The Department Of Electrical And Electronic Engineering University Of Tokushima
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Sugahara Tomoya
Graduate School Of Engineering The University Of Tokushima
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Naoi Y
Univ. Tokushima Tokushima Jpn
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Naoi Yoshiki
Department Of Electrical And Electronic Engineering The University Of Tokushima
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HAYAKAWA Hisao
Electrotechnical Laboratory
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Nakajima Shigeki
Department Of Electrical Engineering Faculty Of Science And Technology Kinki University
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Shintani Yoshihiro
Department Of Electrical And Electronic Engineering Tokushima University
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Nakajima Sadanojo
Department Of Electrical And Electronic Engineering The University Of Tokushinna
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Yoshimi S
Tokushima Univ. Tokushima
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Fukui Masuo
Department Of Electrical And Electronic Engineering Tokushima University
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Fukui Masuo
Department Of Electrical And Electronic Engineering Faculty Of Engineering The University Of Tokushi
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Yang Tao
Department Of Clinical Pharmacology College Of Pharmacy Dalian Medical University
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WANG Tao
Nitride Semiconductors Co., Ltd.
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Wang T
Department Of Chemistry University Of Science And Technology Of China
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Ota Hiroyuki
National Institute Of Advanced Industrial Science And Technology
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SUGAHARA Tomoya
Department of Electrical and Electronic Engineering, The University of Tokushima
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TAKEYASU Masanari
Department of Electronic and Computer Engineering, Nagoya Institute of Technology
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Wang Tao
Satellite Venture Business Laboratory The University Of Tokushima
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Migita Shinji
Electrotechnical Laboratoy
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Shintani Yoshihiro
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Tarui Y
National Institute Of Advanced Industrial Science And Technology
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Youn Doo-hyeb
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Takahashi Yoshihiro
Department Of Applied Physics School Of Engineering Tohoku University
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Sun H
Nitride Photonic Semiconductor Laboratory Svbl The University Of Tokushima
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Li H‐d
Shanghai Inst. Ceramics Chinese Acad. Sci. Shanghai Chn
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Li Hongdong
Satellite Venture Business Laboratory The University Of Tokushima
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Lacroix Y
Univ. Tokushima Tokushima Jpn
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Lacroix Yves
Satellite Venture Business Laboratory The University Of Tokushima
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Lee Young-bae
Department Of Electrical And Electronic Engineering The University Of Tokushima
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干川 圭吾
信州大学教育学部教育実践研究指導センター
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Shimada M
Ntt Microsystem Integration Lab. Kanagawa Jpn
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Shimada M
Hiroshima Univ. Higashi‐hiroshima
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YOSHIMI Shinichi
Department of Electrical and Electronic Engineering, Tokushima University
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SHINTANI Yoshihiro
Department of Electrical and Electronic Engineering, Tokushima University
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Ueta Yoshihiro
Department of Electrical and Electronic Engineering, Tokushima University
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HAO Maosheng
Satellite Venture Business Laboratory, Nitride Photonic Semiconductors Laboratory, The University of
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YAMASHITA Kenji
Department of Electrical and Electronic Engineering, University of Tokushima
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KAWASAKI Koji
Department of Electric and Electronic Engineering, University of Tokushima
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FUJII Sadao
Central Research Laboratory, Kanegafuchi Chemical Industry Co.
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FURUTA Shigeru
Department of Electric and Computer Engineering, Nagoya Institute of Technology
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Yamashita K
Department Of Astrophysics Nagoya University
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Hao Maosheng
Satellite Venture Business Laboratory Nitride Photonic Semiconductors Laboratory The University Of T
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Liu Yuhuai
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Sun Hong-bo
Nitride Photonic Semiconductor Laboratory Svbl The University Of Tokushima
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SHIMIZU Keizo
Electrotechnical Laboratory
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Kawasaki K
Tokyo Inst. Technol. Yokohama Jpn
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Takahashi Y
Tanaka Solid Junction Project Erato Japan Science And Research Corporation
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Yamashita Koujin
Department Of Astrophysics Nagoya University
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Yamashita Kenji
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Yamashita K
Tsukuba Research Laboratory Nippon Sheet Glass Co. Ltd.
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MISAWA Hiroaki
Research Institute for Electronic Science, Hokkaido University
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Takahashi Yasuhito
Department of Electronics, Faculty of Engineering, Nagoya University
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JUODKAZIS Saulius
Nitride Photonic Semiconductor Laboratory, SVBL, The University of Tokushima
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ELISEEV Petr
Graduate School of Engineering, The University of Tokushima
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Shimizu K
Electrotechnical Laboratory
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Shimizu Keizo
Electrotechnical Labolatory
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Yamashita Kenichi
Division Of Science And Materials The Graduate School Of Science And Technology Kobe University
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Ueta Yoshihiro
Department Of Electrical And Electronic Engineering Tokushima University
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Fujii Sadao
Central Research Laboratories Kaneka Corporation
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Kawasaki Koji
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Kawasaki Koji
Department Of Preventive And Community Dentistry Osaka Dental University
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Kawasaki Koji
Department Of Electric And Electronic Engineering University Of Tokushima
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Eliseev Petr
Graduate School Of Engineering The University Of Tokushima
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Qiu H
Laser Microprocessing Laboratory Department Of Electrical Engineering And Data Storage Institute Nat
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Sun Hongbo
The Satellite Venture Business Laboratory The University Of Tokushima
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Sun H‐b
Presto Japan Science And Technology Corporation (jst) :department Of Applied Physics Osaka Universit
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野中 源一郎
九州大学薬学部
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Fukumoto Tetsuya
Faculty Of Engineering The University Of Tokushima
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KURAI Satoshi
Graduate School of Science and Engineering, Yamaguchi University
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SATO Hisao
Department of Dermatology, Jichi Medical School
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Shima Akihiro
Department Of Molecular Biology Keio University School Of Medicine
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Sato Hisao
Nitride Semiconductor Co. Ltd.
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UMENO Masayoshi
Nagoya Institute of Technology
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Okano Yasunori
Department of Materials Engineering Science, Osaka University
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Uesugi T
Waseda Univ. Tokyo Jpn
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Sato H
Research And Development Center Gunze Limited
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BAI Jie
Department of Electrical and Electronic Engineering, University of Tokushima
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LIU Yuhuai
Satellite Venture Business Laboratory, University of Tokushima
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LACROIX Yves
Satellite Venture Business Laboratory, The University of Tokushima
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AO Jinping
Satellite Venture Business Laboratory, The University of Tokushima
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JIANG Nan
Department of Electrical and Electronic Engineering, The University of Tokushima
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Bai Jie
Satellite Venture Business Laboratory The University Of Tokushima
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Nakamura Akihiro
Faculty of Engineering, Hiroshima University
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MISAWA Hiroaki
Department of Ecosystem Engineering, Graduate School of Engineering, The University of Tokushima
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Jiang N
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Jiang Nan
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Kurai Satoshi
Science And Engineering Yamaguchi University
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Sato Hiroyasu
Faculty Of Engineering Mie University
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Shima Akihiro
Department Of Engineering Science Nagoya Institute Of Technology
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Atoda Nobufumi
Electrotechnical Laboratory
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Yuasa Takayuki
Nagoya Inst. Of Technology
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Umeno Masayoshi
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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SHAO Chun
Department of Electrical and Electronic Engineering, Tokushima University
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TERAUCHI Youji
Department of Electrical and Electronic Engineering, Tokushima University
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Wada Naoki
Matsushita Kotobuki Electronics Industries Ltd.
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Koshiba Shohei
Nippon Sanso K.K.
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Uematsu Kunimasa
Nippon Sanso K.K.
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Higashiyama Kenji
Matsushita Kotobuki Electronics Industries Ltd.
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Shintani Yoshihiro
Technical college, Tokushima Univetsity
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SUSAWA Hiromoto
Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology
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Sato Hiroharu
Multimedia Eng. Lab.
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LACHAB Mohamed
Satellite Venture Business Laboratory, Nitride Photonic Semiconductors Laboratory, The University of
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MAHANTY Sourindra
Department of Electrical and Electronic Engineering, The University of Tokushima
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Sato H
Univ. Tokushima Tokushima Jpn
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OHSHIBA Hidenori
Department of Electrical and Electronic Engineering, The University of Tokushima
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TOBITA Manabu
Department of Electric and Computer Engineering, Nagoya Institute of Technology
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SASAMORI Kenichiro
Institute for Materials Research, Tohoku University
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Mahanty Sourindra
Department Of Electrical And Electronic Engineering The University Of Tokushima
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YAN Fawang
Satellite Venture Business Laboratory, The University of Tokushima
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TSUKIHARA Masashi
Faculty of Engineering, The University of Tokushima
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YADANI Takayuki
Faculty of Engineering, The University of Tokushima
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NAOI Yoshiki
Faculty of Engineering, The University of Tokushima
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SAKAI Shiro
Faculty of Engineering, The University of Tokushima
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KURAI Satoshi
Department of Electrical and Electronic Engineering, University of Tokushima
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NISHINO Katsushi
Department of Electrical and Electronic Engineering, University of Tokushima
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Tobita Manabu
Department Of Electric And Computer Engineering Nagoya Institute Of Technology
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Umeno Masayoshi
Nagoya Inst. Of Technology
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Nishino K
Department Of Electrical And Electronic Engineering The University Of Tokushima
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TSUKIHARA Masashi
Department of Electrical and Electronic Engineering, The University of Tokushima
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Shimizu K
Department Of Physical Electronics Tokyo Institute Of Technology
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Bai Jie
Department Of Cell Biology And Medical Genetics The First Military Medical University
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Fujino Hidetoshi
Electrotechnical Laboratory:university Of Tsukuba
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Kurai Satoshi
Department Of Electrical And Electronic Engineering Faculty Of Engineering Yamaguchi University
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Kurai Satoshi
Department Of Electrical And Electronic Engineering Tokushima University
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Lachab M
Tokushima Univ. Tokushima Jpn
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Lachab Mohamed
Sateliite Venture Business Laboratory Tokushima University
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SAKAI Shigeki
National Institute of Advanced Industrial Science and Technology
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Ao Jinping
Satellite Venture Business Laboratory The University Of Tokushima
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Koike H
Nec Corp. Kanagawa Jpn
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Kishi H
General R&d Laboratories Taiyo Yuden Co. Ltd.
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Kishi Hiroshi
Taiyo Yuden Co. Ltd.
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Hu Xiong
Department Of Electronic And Computer Engineering Nagoya Institute Of Technology
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Hirai T
Tohoku Univ. Sendai‐shi
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TOKUMOTO Hiroshi
Electrotechmical Laboratory
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Hirai Toshihiro
Material Development Research Laboratory Nippon Mining Co. Lid.
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WATANABE Mitsuru
Graduate School of Engineering, The University of Tokushima
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MATSUO Shigeki
Graduate School of Engineering, The University of Tokushima
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MISAWA Hiroaki
Graduate School of Engineering, The University of Tokushima
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ELISEEV Petr
Nitride Photonic Semiconductor Laboratory, SVBL, The University of Tokushima
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Shimizu Keizo
Electrotechnical Lanoratory
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SUMIYOSHI Kazuhide
Department of Electrical and Electronic Engineering, The University of Tokushima
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KATAOKA Ken
Department of Electrical and Electronic Engineering, The University of Tokushima
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OKIMOTO Takashi
Department of Electrical and Electronic Engineering, The University of Tokushima
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Kishi Hiroshi
General R&d Laboratories Toiyo Yuden Co. Ltd.
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Kishi Hiroshi
The School Of Science And Engineering Waseda University
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Uesugi Takumi
The School of Science and Engineering, Waseda University
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Hirai Tadahiko
The School of Science and Engineering, Waseda University
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Tarui Yasuo
The School of Science and Engineering, Waseda University
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松尾 繁樹
The University Of Tokushima
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Watanabe Mitsuru
Department Of Ecosystem Engineering Graduate School Of Engineering The University Of Tokushima
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Watanabe Mitsuru
Institute For Materials Research:department Of Materials Engineering And Applied Chemistry Mining Co
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Ueta Yoshihiro
Advanced Technology Research Laboratories Sharp Corporation
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Susawa Hiromoto
Department Of Electric And Computer Engineering Nagoya Institute Of Technology
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Shao Chun
Research Center For Nano-device And System Nagoya Institute Of Technology
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Shao Chun
Department Of Electrical And Electronic Engineering Tokushima University:textile Engineering Institu
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Uematsu Kunimasa
Nippon Sanso Corporation Technology Division
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Ohshiba Hidenori
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Shintani Yoshihiro
Technical College Tokushima University
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Atoda N
Electrotechnical Laboratory
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Tarui Yasuo
Electrotechnical Laboratory
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Oishi Shuji
Faculty Of Engineering Shinshu University
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Murai Masami
Ija Development Group Seiko-epson Corporation
著作論文
- V-Shaped Defects in AlGaN/GaN Superlattices Grown on Thin Undoped-GaN Layers on Sapphire Substrate : Surfaces, interfaces, and Films
- Influence of Inversion Domains on Formation of V-Shaped Pits in GaN Films : Surfaces, Interfaces, and Films
- GaAs / AlGaAs Light Emitters Fabricated on Undercut GaAs on Si
- Thermal Stress and Dislocation Density in Undercut GaAs on Si
- Photoluminescence Dark Spot Dynamics in GaAs Grown on Si
- Stable Operation of AlGaAs/GaAs Light-Emitting Diodes Fabricated on Si Substrate
- Zinc Diffusion in Al_Ga_As Grown on Si Substrate
- A New Reactor for Metalorganic Chemical Vapor Deposition Equipped with an Internal Rotary Flow Selector
- Comparison and Investigation of Ohmic Characteristics in Ni/AuZn and Cr/Auzn to p-GaN
- Optimization Process in the P-Type Activation and Its Relationship with the Defects Structure in Mg-Doped p-GaN
- Structures for Thermal Stress Reduction in GaAs Layers Grown on Si Substrate
- Stress Distribution Analysis in Structured GaAs Layers Fabricated on Si Substrates
- Tight-Binding Calculation of Electronic Structures of InNAs Ordered Alloys
- Electronic Structure of GaP_N_x Alloys Determined Using Pseudopotentials and Gaussian Orbitals
- Electronic Structures of Wurtzite GaN, InN and Their Alloy Ga_In_xN Calculated by the Tight-Binding Method
- Valence-Band-Edge Energy of Group-III Nitride Alloy Semiconductors
- Effect of Growth Temperature on InGaAsP/GaAsP Expitaxial Growth
- Crosshatch Pattern on InGaAsP Layers Grown on GaAs_P_ Substrate by LPE
- Meltback of GaAs_P_ Substrate in LPE Growth of InGaAsP
- LPE Growth of In_ Ga_xAs_P_y on GaAs_P_
- Room Temperature Operation of Visible (λ=658.6 nm) InGaAsP DH Laser Diodes on GaAsP
- Visible InGaP / GaAsP Dual Wavelength Light Emitting Diodes
- Surface Smoothing Mechanism of AIN Film by Initially Alternating Supply of Ammonia
- GaAlAs/ GaAs TJS Lasers on Si Substrates Operating at Room Temperature Fabricated by MOCVD
- Selective MOCVD Growth of GaAs on Si Substrate with Superlattice Intermediate Layers
- Band Gap Energy and Stress of GaAs Grown on Si by MOCVD
- Deep Levels in GaAs Grown Using Superlattice Intermediate Layers on Si Substrates by MOCVD
- MOCVD Growth of GaAs_P_x (x=0-1) and Fabrication of GaAs_P_ LED on Si Substrate
- MOCVD Growth of GaAs_P_ on Si Substrate
- AlGaAs/GaAs DH Lasers on Si Substrates Grown Using Super Lattice Buffer Layers by MOCVD
- Mechnism of MOCVD Growth for GaAs and AlAs
- Solid Composition and Growth Rate of Ga_Al_xAs Grown Epitaxially by MOCVD
- X-Ray Diffraction Analysis of GaN and GaN/InGaN/GaN Double-Hetero Structures Grown on Sapphire Substrate by Metalorganic Chemical Vapor Deposition
- Annealing of GaN-InGaN Multi Quantum Wells : Correlation between the Bandgap and Yellow Photoluminescence
- Laser-Induced Damage Threshold and Surface Processing of GaN at 400 nm Wavelength
- Growth Style of Bi_4Ti_3O_ Thin Films on CeO_2/Ce_Zr_O_2 Buffered Si Substrates
- Photoluminescence Study on InGaN/GaN Quantum Well Structure Grown on (112^^-0) Sapphire Substrate
- Fabrication and Electrical Characteristics of a Trench-Type Metal-Ferroelectric-Metal-Insulator-Semiconductor Field Effect Transistor
- Epitaxial Growth of Bi_4Ti_3O_/CeO_2/Ce_Zr_O_2 and Bi_4Ti_3O_/SrTiO_3/Ce_Zr_O_2 Thin Films on Si and Its Application to Metal-Ferroelectric-Insulator-Semiconductor Diodes
- Surface Morphology and Dielectric Properties of Stoichiometric and Off-Stoichiometric SrTiO_3 Thin Films Grown by Molecular Beam Epitaxy
- Dependence of Electrically Induced Strain on Orientation and Composition in Pb(Zr_xTi_)O_3 Films
- Development of a Sessile Drop Method Concerning Czochralski Si Crystal Growth
- Expansion Behavior of Bubbles in Silica Glass Concerning Czochralski (CZ) Si Growth
- Structure and Piezoelectric Properties of 0.9 Pb(Zr,Ti)O_3-0.1 Pb(Mg,Nb)O_3 Films Prepared by Metalorganic Deposition Process
- Analysis of Oxygen Evaporation Rate and Dissolution Rate Concerning Czochralski Si Crystal Growth : Effect of Ar Pressure
- Analysis of an Oxygen Dissolution Process Concerning Czochralski (CZ) Si Crystal Growth using the Sessile Drop Method
- A Digital Method of Gas Laser Etching for Oxide Superconductors
- Observation of Electrical Write/Erase Operations for a Memory-Type Polyrmer-Dispersed Cholesteric Liquid Crystal
- Characteristics of Right- and Left-Handed Polymer-Dispersed Cholesteric Liquid Crystals
- Reflective Color Display Using Polymer-Dispersed Cholesteric Liquid Crystal
- Color Image Formation Using Polymer-Dispersed Cholesteric Liquid Crystal
- Multipage Display Using Stacked Polymer-Dispersed Liquid Crystal Films
- Band Gap Energy and Band Lineup of III-V Alloy Semiconductors Incorporating Nitrogen and Boron
- Molecular Beam Epitaxy Fabrication of SrTiO_3 and Bi_2Sr_2CaCu_2O_8 Heterostructures Using a Novel Reflection High-Energy Electron Diffraction Monitoring Technique
- RHEED Intensity Monirored Growth of Bi-Sr-Ca-Cu-O Superconductors
- Laser Etching of Bi-Sr-Ca-Cu-O Superconducting Thin Films
- Fluxon Transfer Device
- Fluxon Divider
- Fluxon Feedback Oscillator
- Fluxon Observation Using a Josephson Sampler
- Effect of GaNP Buffer Layer on AlGaN Epilayers Deposited on (0001) Sapphire Substrates by Metalorganic Chemical Vapor Deposition
- Growth and Characterization of Thick GaN by Sublimation Method and Homoepitaxial Growth by Metalorganic Chemical Vapor Deposition
- MOCVD Growth of InP Using Plasma Pre-Cracking