MOCVD Growth of InP Using Plasma Pre-Cracking
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概要
- 論文の詳細を見る
Plasma cracking of PH_3 has been successfully applied in growing InP by MOCVD at 2.6 Torr. Plasma effects are an increase in the growth rate, the reduction of surface roughness and an increase in the photoluminescence intensity. This technique is very useful in growing any III-V alloy semiconductor systems, especially for thin-film growth. This is because the growth pressure can be reduced without being affected by an imperfect decomposition of the source gases. The growth parameter dependence of the grown-layer characteristics are investigated in this paper.
- 社団法人応用物理学会の論文
- 1986-08-20
著者
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Sakai S
Tokushima Univ. Tokushima Jpn
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Umeno Masayoshi
Department Of Electric And Computer Engineering Nagoya Institute Of Technology
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Umeno Masayoshi
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Sakai Shiro
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Yamamoto Shin-ichi
Department Of Anesthesiology Keio University School Of Medicine
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Yamamoto Shin-ichi
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Sakai Shiro
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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