Band Gap Energy and Band Lineup of III-V Alloy Semiconductors Incorporating Nitrogen and Boron
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1993-10-15
著者
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SAKAI Shiro
Department of Electrical and Electronic Engineering, University of Tokushima
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Sakai S
Tokushima Univ. Tokushima Jpn
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Sakai S
Department Of Electric And Computer Engineering Nagoya Institute Of Technology
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Sakai S
Department Of Electrical And Electronic Engineering The University Of Tokushinna
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Sakai S
Electrotechnical Lab. Ibaraki
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Ueta Yoshihiro
Department of Electrical and Electronic Engineering, Tokushima University
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Sakai Shiro
Graduate School Of Engineering The University Of Tokushima
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Sakai Shiro
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Sakai S
Faculty Of Education Shinshu University:(present Address)department Of Materials Science And Chemica
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Ueta Yoshihiro
Advanced Technology Research Laboratories Sharp Corporation
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Ueta Yoshihiro
Department Of Electrical And Electronic Engineering Tokushima University
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Ueta Y
Advanced Technology Research Laboratories Sharp Corporation
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TERAUCHI Yoji
Department of Electrical and Electronic Engineering, Tokushima University
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Terauchi Yoji
Department Of Electrical And Electronic Engineering Tokushima University
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Sakai Shiro
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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