Analysis of Oxygen Evaporation Rate and Dissolution Rate Concerning Czochralski Si Crystal Growth : Effect of Ar Pressure
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概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 1998-06-01
著者
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Sakai S
Tokushima Univ. Tokushima Jpn
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Sakai S
Electrotechnical Lab. Ibaraki
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Huang X
Nanjing Univ. Nanjing Chn
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HUANG Xinming
Faculty of Education, Shinshu University
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HOSHIKAWA Keigo
Faculty of Education, Shinshu University
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SAITOU Keijirou
Faculty of Education, Shinshu University
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SAKAI Susumu
Department of Materials Science and Chemical Engineering, Shizuoka University
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TERASHIMA Kazutaka
Shonan Institute of Technology
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