Structure and Piezoelectric Properties of 0.9 Pb(Zr,Ti)O_3-0.1 Pb(Mg,Nb)O_3 Films Prepared by Metalorganic Deposition Process

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1999-02-15

著者

• SAKAI Shiro

  Department of Electrical and Electronic Engineering, University of Tokushima

• Sakai S

  Department Of Electrical And Electronic Engineering The University Of Tokushima

• Sakai S

  Electrotechnical Lab. Ibaraki Jpn

• Sakai S

  Tokushima Univ. Tokushima Jpn

• Sakai S

  Department Of Electric And Computer Engineering Nagoya Institute Of Technology

• Sakai S

  Department Of Electrical And Electronic Engineering The University Of Tokushinna

• Sakai S

  Electrotechnical Lab. Ibaraki

• Shimada M

  Ntt Microsystem Integration Lab. Kanagawa Jpn

• Shimada M

  Hiroshima Univ. Higashi‐hiroshima

• Sakai S

  Department Of Electrical And Electronic Engineering Tokushima University

• Sakai Shiro

  Graduate School Of Engineering The University Of Tokushima

• Sakai S

  Faculty Of Education Shinshu University:(present Address)department Of Materials Science And Chemica

• Qiu H

  Laser Microprocessing Laboratory Department Of Electrical Engineering And Data Storage Institute Nat

• Sakai S

  Sci. Univ. Tokyo Tokyo Jpn

• Shimada M

  Graduate School Of Natural Science And Technology Kanazawa University

• Sumi Kouji

  IJA Development Group, Seiko-Epson Corporation

• Qiu Hong

  IJA Development Group, Seiko-Epson Corporation

• Shimada Masato

  IJA Development Group, Seiko-Epson Corporation

• Sakai Shinri

  IJA Development Group, Seiko-Epson Corporation

• Nishiwaki Tsutomu

  IJA Development Group, Seiko-Epson Corporation

• Sumi Kouji

  Ija Development Group Seiko-epson Corporation

• Nishiwaki Tsutomu

  Ija Development Group Seiko-epson Corporation

関連論文

• Influence of Pyramidal Defects on Photoluminescence of Mg-doped AlGaN/GaN Superlattice Structures
• High-Performance 348 nm AlGaN/GaN-Based Ultraviolet-Light-Emitting Diode with a SiN Buffer Layer
• V-Shaped Defects in AlGaN/GaN Superlattices Grown on Thin Undoped-GaN Layers on Sapphire Substrate : Surfaces, interfaces, and Films
• Influence of Inversion Domains on Formation of V-Shaped Pits in GaN Films : Surfaces, Interfaces, and Films
• GaAs / AlGaAs Light Emitters Fabricated on Undercut GaAs on Si
• Thermal Stress and Dislocation Density in Undercut GaAs on Si
• Photoluminescence Dark Spot Dynamics in GaAs Grown on Si
• Stable Operation of AlGaAs/GaAs Light-Emitting Diodes Fabricated on Si Substrate
• Zinc Diffusion in Al_Ga_As Grown on Si Substrate
• A New Reactor for Metalorganic Chemical Vapor Deposition Equipped with an Internal Rotary Flow Selector
• Investigation on the P-Type Activation Mechanism in Mg-doped GaN Films Grown by Metalorganic Chemical Vapor Deposition
• Comparison and Investigation of Ohmic Characteristics in the Ni/AuZn and Cr/AuZn Metal Schemes
• Comparison and Investigation of Ohmic Characteristics in Ni/AuZn and Cr/Auzn to p-GaN
• Optimization Process in the P-Type Activation and Its Relationship with the Defects Structure in Mg-Doped p-GaN
• Ohmic Contact to P-Type GaN
• Structures for Thermal Stress Reduction in GaAs Layers Grown on Si Substrate
• Stress Distribution Analysis in Structured GaAs Layers Fabricated on Si Substrates
• Tight-Binding Calculation of Electronic Structures of InNAs Ordered Alloys
• Electronic Structure of GaP_N_x Alloys Determined Using Pseudopotentials and Gaussian Orbitals
• Electronic Structures of Wurtzite GaN, InN and Their Alloy Ga_In_xN Calculated by the Tight-Binding Method
• Valence-Band-Edge Energy of Group-III Nitride Alloy Semiconductors
• Effect of Growth Temperature on InGaAsP/GaAsP Expitaxial Growth
• Crosshatch Pattern on InGaAsP Layers Grown on GaAs_P_ Substrate by LPE
• Meltback of GaAs_P_ Substrate in LPE Growth of InGaAsP
• LPE Growth of In_ Ga_xAs_P_y on GaAs_P_
• Room Temperature Operation of Visible (λ=658.6 nm) InGaAsP DH Laser Diodes on GaAsP
• Visible InGaP / GaAsP Dual Wavelength Light Emitting Diodes
• New Wavelength-Demultiplexing InGaAsP/InP Photodiodes : III-4: III-V COMPOUND SOLAR CELLS AND DETECTORS
• Measurement of Diffusion Coefficient and Surface Recombination Velocity for p-InGaAsP Grown on InP
• InGaAsP/InP Native Oxide Stripe Lasers
• InGaAsP/InP Double-Heterostructure Photodiodes
• H-Mode Outside Divertor Free from Peripheral Disruption in Doublet III
• Plasma Shapes for Achieving High Heating Efficiency during Neutral Beam Injection in Doublet III
• Surface Smoothing Mechanism of AIN Film by Initially Alternating Supply of Ammonia
• Role of Dislocation in InGaN Phase Separation
• Lateral Overgrowth of Thick GaN on Patterned GaN Substrate by Sublimation Technique
• Direct Evidence that Dislocations are Non-Radiative Recombination Centers in GaN
• Study of Threading Dislocations in Wurtzite GaN Films Grown on Sapphire by Metalorganic Chemical Vapor Deposition
• Surface Pretreatment of Bulk GaN for Homoepitaxial Growth by Metalorganic Chemical Vapor Deposition
• Fabrication of High-Output-Power AlGaN/GaN-Based UV-Light-Emitting Diode Using a Ga Droplet Layer
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• Electron Cyclotron Resonance Plasma Etching of α-Ta for X-Ray Mask Absorber Using Chlorine and Fluoride Gas Mixture
• Development of Highly Accurate X-Ray Mask with High-Density Patterns
• GaAlAs/ GaAs TJS Lasers on Si Substrates Operating at Room Temperature Fabricated by MOCVD
• Effect of Oxygen on the Activation of Mg Acceptor in GaN Epilayers Grown by Metalorganic Chemical Vpor Deposition
• Selective MOCVD Growth of GaAs on Si Substrate with Superlattice Intermediate Layers
• Band Gap Energy and Stress of GaAs Grown on Si by MOCVD
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• MOCVD Growth of GaAs_P_x (x=0-1) and Fabrication of GaAs_P_ LED on Si Substrate
• MOCVD Growth of GaAs_P_ on Si Substrate
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• Mechnism of MOCVD Growth for GaAs and AlAs
• Solid Composition and Growth Rate of Ga_Al_xAs Grown Epitaxially by MOCVD
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• X-Ray Diffraction Analysis of GaN and GaN/InGaN/GaN Double-Hetero Structures Grown on Sapphire Substrate by Metalorganic Chemical Vapor Deposition
• Annealing of GaN-InGaN Multi Quantum Wells : Correlation between the Bandgap and Yellow Photoluminescence
• Laser-Induced Damage Threshold and Surface Processing of GaN at 400 nm Wavelength
• Al_Ga_N Film Using Middle-Temperature Intermediate Layer Grown on (0001) Sapphire Substrate by Metal-Organic Chemical Vapor Deposition
• Optical Properties of Bound Excitons and Biexcitons in GaN(Special Issue on Blue Laser Diodes and Related Devices/Technologies)
• Reactive Ion Etching of GaN and Al_xGa_N Using Cl_2/CH_4/Ar Plasma
• Excitonic Emissions under High Excitation of Hexagonal GaN Single Crystal Grown by Sublimation Method
• Selective Etching of GaN over Al_xGa_N Using Reactive Ion Plasma of Cl_2/CH_4/Ar Gas Mixture
• High Temperature Reactive Ion Etching of GaN and AlGaN Using Cl_2 and CH_4 Plasma
• Growth Style of Bi_4Ti_3O_ Thin Films on CeO_2/Ce_Zr_O_2 Buffered Si Substrates
• Photoluminescence Study on InGaN/GaN Quantum Well Structure Grown on (112^^-0) Sapphire Substrate
• Growth of InAsP on InP by Liquid Phase Electroepitaxy
• Fabrication and Electrical Characteristics of a Trench-Type Metal-Ferroelectric-Metal-Insulator-Semiconductor Field Effect Transistor
• Epitaxial Growth of Bi_4Ti_3O_/CeO_2/Ce_Zr_O_2 and Bi_4Ti_3O_/SrTiO_3/Ce_Zr_O_2 Thin Films on Si and Its Application to Metal-Ferroelectric-Insulator-Semiconductor Diodes
• Surface Morphology and Dielectric Properties of Stoichiometric and Off-Stoichiometric SrTiO_3 Thin Films Grown by Molecular Beam Epitaxy
• Dependence of Electrically Induced Strain on Orientation and Composition in Pb(Zr_xTi_)O_3 Films
• Development of a Sessile Drop Method Concerning Czochralski Si Crystal Growth
• Expansion Behavior of Bubbles in Silica Glass Concerning Czochralski (CZ) Si Growth
• Structure and Piezoelectric Properties of 0.9 Pb(Zr,Ti)O_3-0.1 Pb(Mg,Nb)O_3 Films Prepared by Metalorganic Deposition Process
• Analysis of Oxygen Evaporation Rate and Dissolution Rate Concerning Czochralski Si Crystal Growth : Effect of Ar Pressure
• Analysis of an Oxygen Dissolution Process Concerning Czochralski (CZ) Si Crystal Growth using the Sessile Drop Method
• A Digital Method of Gas Laser Etching for Oxide Superconductors
• Observation of Electrical Write/Erase Operations for a Memory-Type Polyrmer-Dispersed Cholesteric Liquid Crystal
• Characteristics of Right- and Left-Handed Polymer-Dispersed Cholesteric Liquid Crystals
• Reflective Color Display Using Polymer-Dispersed Cholesteric Liquid Crystal
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• Multipage Display Using Stacked Polymer-Dispersed Liquid Crystal Films
• Band Gap Energy and Band Lineup of III-V Alloy Semiconductors Incorporating Nitrogen and Boron
• Molecular Beam Epitaxy Fabrication of SrTiO_3 and Bi_2Sr_2CaCu_2O_8 Heterostructures Using a Novel Reflection High-Energy Electron Diffraction Monitoring Technique
• RHEED Intensity Monirored Growth of Bi-Sr-Ca-Cu-O Superconductors
• Laser Etching of Bi-Sr-Ca-Cu-O Superconducting Thin Films
• Simplified Dual Channel Optical Trarnsmission Using Integrated Light Emitters and Photodetectors
• Fluxon Transfer Device
• Fluxon Divider
• Fluxon Feedback Oscillator
• Fluxon Observation Using a Josephson Sampler
• Effect of GaNP Buffer Layer on AlGaN Epilayers Deposited on (0001) Sapphire Substrates by Metalorganic Chemical Vapor Deposition
• Nucleation Control in the Growth of Bulk GaN by Sublimation Method
• Transmission Electron Microscopy of Sublimation-Grown GaN Single Crystal and GaN Homoepitaxial Film
• Growth and Characterization of Thick GaN by Sublimation Method and Homoepitaxial Growth by Metalorganic Chemical Vapor Deposition
• Photopumped Stimulated Emission from Homoepitaxial GaN Grown on Bulk GaN Prepared by Sublimation Method
• Role of Dislocation in InGaN/GaN Quantum Wells Grown on Bulk GaN and Sapphire Substrates(Special Issue on Blue Laser Diodes and Related Devices/Technologies)
• MOCVD Growth of InP Using Plasma Pre-Cracking
• A Direct Coupled Josephson Sampler

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