Surface Morphology and Dielectric Properties of Stoichiometric and Off-Stoichiometric SrTiO_3 Thin Films Grown by Molecular Beam Epitaxy
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1999-12-15
著者
-
SAKAI Shiro
Department of Electrical and Electronic Engineering, University of Tokushima
-
Sakai S
Department Of Electrical And Electronic Engineering The University Of Tokushima
-
Sakai S
Electrotechnical Lab. Ibaraki Jpn
-
Sakai S
Tokushima Univ. Tokushima Jpn
-
Sakai S
Department Of Electric And Computer Engineering Nagoya Institute Of Technology
-
Sakai S
Department Of Electrical And Electronic Engineering The University Of Tokushinna
-
Sakai S
Electrotechnical Lab. Ibaraki
-
Ota Hiroyuki
National Institute Of Advanced Industrial Science And Technology
-
Sakai S
Department Of Electrical And Electronic Engineering Tokushima University
-
Sakai Shiro
Graduate School Of Engineering The University Of Tokushima
-
Sakai S
Faculty Of Education Shinshu University:(present Address)department Of Materials Science And Chemica
-
Fujino Hidetoshi
Electrotechnical Laboratory:university Of Tsukuba
-
Migita Shinji
Electrotechnical Laboratoy
-
Sakai Shigeki
Electrotechnical Laboratory
-
Kasai Y
Electrotechnical Laboratory
-
Migita Shinji
National Institute Of Advanced Industrial Science And Technology
-
Sakai S
Sci. Univ. Tokyo Tokyo Jpn
-
XIONG Si-Bei
National Institute of Advanced Industrial science and Technology
-
XIONG Si-Bei
Electrotechnical Laboratoly
-
OTA Hiroyuki
Electrotechnical Laboratoly
-
KASAI Yuji
Electrotechnical Laboratory
-
Sakai Shigeki
Electro Technical Laboratory
関連論文
- Influence of Pyramidal Defects on Photoluminescence of Mg-doped AlGaN/GaN Superlattice Structures
- High-Performance 348 nm AlGaN/GaN-Based Ultraviolet-Light-Emitting Diode with a SiN Buffer Layer
- V-Shaped Defects in AlGaN/GaN Superlattices Grown on Thin Undoped-GaN Layers on Sapphire Substrate : Surfaces, interfaces, and Films
- Influence of Inversion Domains on Formation of V-Shaped Pits in GaN Films : Surfaces, Interfaces, and Films
- GaAs / AlGaAs Light Emitters Fabricated on Undercut GaAs on Si
- Thermal Stress and Dislocation Density in Undercut GaAs on Si
- Photoluminescence Dark Spot Dynamics in GaAs Grown on Si
- Stable Operation of AlGaAs/GaAs Light-Emitting Diodes Fabricated on Si Substrate
- Zinc Diffusion in Al_Ga_As Grown on Si Substrate
- A New Reactor for Metalorganic Chemical Vapor Deposition Equipped with an Internal Rotary Flow Selector