Electronic Structures of Wurtzite GaN, InN and Their Alloy Ga_<1-x>In_xN Calculated by the Tight-Binding Method

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1995-11-15

著者

• Yang Tao

  Department Of Electrical And Electronic Engineering The University Of Tokushinna

• SAKAI Shiro

  Department of Electrical and Electronic Engineering, University of Tokushima

• Sakai S

  Department Of Electrical And Electronic Engineering The University Of Tokushima

• Sakai S

  Electrotechnical Lab. Ibaraki Jpn

• Sakai S

  Tokushima Univ. Tokushima Jpn

• Sakai S

  Department Of Electric And Computer Engineering Nagoya Institute Of Technology

• Sakai S

  Department Of Electrical And Electronic Engineering The University Of Tokushinna

• Sakai S

  Electrotechnical Lab. Ibaraki

• NAKAJIMA Sadanojo

  Department of Electrical and Electronic Engineering, The University of Tokushinna

• Sakai S

  Department Of Electrical And Electronic Engineering Tokushima University

• Sakai Shiro

  Graduate School Of Engineering The University Of Tokushima

• Sakai Shiro

  Department Of Electrical And Electronic Engineering The University Of Tokushima

• Sakai S

  Faculty Of Education Shinshu University:(present Address)department Of Materials Science And Chemica

• Nakajima Shigeki

  Department Of Electrical Engineering Faculty Of Science And Technology Kinki University

• Nakajima Sadanojo

  Department Of Electrical And Electronic Engineering The University Of Tokushinna

• Yang Tao

  Department Of Clinical Pharmacology College Of Pharmacy Dalian Medical University

• Sakai S

  Sci. Univ. Tokyo Tokyo Jpn

• Nakajima S

  Ntt Electronics Corp.

• Nogiwa Seiji

  Optical Measurement Technology Development Co. Ltd.:ando Electric Co. Ltd.

• Yang Tao

  Department Of Chemistry And Chemical Engineering Yamagata University

• Sakai Shiro

  Department Of Electrical And Computer Engineering Nagoya Institute Of Technology

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