Laser-Induced Damage Threshold and Surface Processing of GaN at 400 nm Wavelength
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1999-07-15
著者
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Sun H
Nitride Photonic Semiconductor Laboratory Svbl The University Of Tokushima
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SAKAI Shiro
Department of Electrical and Electronic Engineering, University of Tokushima
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Sakai S
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Sakai S
Electrotechnical Lab. Ibaraki Jpn
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Sakai S
Tokushima Univ. Tokushima Jpn
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Sakai S
Department Of Electric And Computer Engineering Nagoya Institute Of Technology
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Sakai S
Department Of Electrical And Electronic Engineering The University Of Tokushinna
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Sakai S
Electrotechnical Lab. Ibaraki
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MISAWA Hiroaki
Department of Ecosystem Engineering, Graduate School of Engineering, The University of Tokushima
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SUGAHARA Tomoya
Department of Electrical and Electronic Engineering, The University of Tokushima
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Sugahara Tomoya
The Authors Are With The Department Of Electrical And Electronic Engineering University Of Tokushima
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Sugahara T
The Authors Are With The Department Of Electrical And Electronic Engineering University Of Tokushima
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Sugahara Tomoya
Graduate School Of Engineering The University Of Tokushima
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Sun Hong-bo
Nitride Photonic Semiconductor Laboratory Svbl The University Of Tokushima
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Sakai S
Department Of Electrical And Electronic Engineering Tokushima University
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Sakai Shiro
Graduate School Of Engineering The University Of Tokushima
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Sakai Shiro
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Sakai S
Faculty Of Education Shinshu University:(present Address)department Of Materials Science And Chemica
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MISAWA Hiroaki
Research Institute for Electronic Science, Hokkaido University
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JUODKAZIS Saulius
Nitride Photonic Semiconductor Laboratory, SVBL, The University of Tokushima
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ELISEEV Petr
Graduate School of Engineering, The University of Tokushima
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ELISEEV Petr
Nitride Photonic Semiconductor Laboratory, SVBL, The University of Tokushima
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Eliseev Petr
Graduate School Of Engineering The University Of Tokushima
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Sun Hongbo
The Satellite Venture Business Laboratory The University Of Tokushima
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Sun H‐b
Presto Japan Science And Technology Corporation (jst) :department Of Applied Physics Osaka Universit
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Sakai S
Sci. Univ. Tokyo Tokyo Jpn
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Misawa H
Research Institute For Electronic Science Hokkaido University
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Misawa H
Tohoku Univ. Sendai Jpn
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Misawa Hiroaki
Department Of Ecosystem Engineering The University Of Tokushima
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Juodkazis S
Research Institute For Electronic Science Hokkaido University
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Sakai Shiro
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Misawa Hiroaki
Department Of Chemistry University Of Tsukuba
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Sugahara Tomoya
The authors are with the Department of Electrical and Electronic Engineering, University of Tokushima
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