Sugahara Tomoya | The authors are with the Department of Electrical and Electronic Engineering, University of Tokushima
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概要
- SUGAHARA Tomoyaの詳細を見る
- 同名の論文著者
- The authors are with the Department of Electrical and Electronic Engineering, University of Tokushimaの論文著者
関連著者
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Sugahara Tomoya
The Authors Are With The Department Of Electrical And Electronic Engineering University Of Tokushima
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Sugahara T
The Authors Are With The Department Of Electrical And Electronic Engineering University Of Tokushima
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Sugahara Tomoya
Graduate School Of Engineering The University Of Tokushima
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Sugahara Tomoya
The authors are with the Department of Electrical and Electronic Engineering, University of Tokushima
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Sakai S
Department Of Electrical And Electronic Engineering The University Of Tokushima
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SUGAHARA Tomoya
Department of Electrical and Electronic Engineering, The University of Tokushima
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SAKAI Shiro
Department of Electrical and Electronic Engineering, University of Tokushima
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Sakai Shiro
Department of Electrical and Electronic Engineering, The University of Tokushima
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Sakai Shiro
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Sakai Shiro
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
著作論文
- Investigation on the P-Type Activation Mechanism in Mg-doped GaN Films Grown by Metalorganic Chemical Vapor Deposition
- Comparison and Investigation of Ohmic Characteristics in Ni/AuZn and Cr/Auzn to p-GaN
- Optimization Process in the P-Type Activation and Its Relationship with the Defects Structure in Mg-Doped p-GaN
- Ohmic Contact to P-Type GaN
- Role of Dislocation in InGaN Phase Separation
- Lateral Overgrowth of Thick GaN on Patterned GaN Substrate by Sublimation Technique
- Direct Evidence that Dislocations are Non-Radiative Recombination Centers in GaN
- Study of Threading Dislocations in Wurtzite GaN Films Grown on Sapphire by Metalorganic Chemical Vapor Deposition
- Surface Pretreatment of Bulk GaN for Homoepitaxial Growth by Metalorganic Chemical Vapor Deposition
- Compositional Inhomogeneity of InGaN Grown on Sapphire and Bulk GaN Substrates by Metalorganie Chemical Vapor Deposition