Sugahara Tomoya | The authors are with the Department of Electrical and Electronic Engineering, University of Tokushima

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著作論文

Investigation on the P-Type Activation Mechanism in Mg-doped GaN Films Grown by Metalorganic Chemical Vapor Deposition
Comparison and Investigation of Ohmic Characteristics in Ni/AuZn and Cr/Auzn to p-GaN
Optimization Process in the P-Type Activation and Its Relationship with the Defects Structure in Mg-Doped p-GaN
Ohmic Contact to P-Type GaN
Role of Dislocation in InGaN Phase Separation
Lateral Overgrowth of Thick GaN on Patterned GaN Substrate by Sublimation Technique
Direct Evidence that Dislocations are Non-Radiative Recombination Centers in GaN
Study of Threading Dislocations in Wurtzite GaN Films Grown on Sapphire by Metalorganic Chemical Vapor Deposition
Surface Pretreatment of Bulk GaN for Homoepitaxial Growth by Metalorganic Chemical Vapor Deposition
Compositional Inhomogeneity of InGaN Grown on Sapphire and Bulk GaN Substrates by Metalorganie Chemical Vapor Deposition
Annealing of GaN-InGaN Multi Quantum Wells : Correlation between the Bandgap and Yellow Photoluminescence
Laser-Induced Damage Threshold and Surface Processing of GaN at 400 nm Wavelength
Optical Properties of Bound Excitons and Biexcitons in GaN(Special Issue on Blue Laser Diodes and Related Devices/Technologies)
Reactive Ion Etching of GaN and Al_xGa_N Using Cl_2/CH_4/Ar Plasma
Selective Etching of GaN over Al_xGa_N Using Reactive Ion Plasma of Cl_2/CH_4/Ar Gas Mixture
High Temperature Reactive Ion Etching of GaN and AlGaN Using Cl_2 and CH_4 Plasma
Role of Dislocation in InGaN/GaN Quantum Wells Grown on Bulk GaN and Sapphire Substrates(Special Issue on Blue Laser Diodes and Related Devices/Technologies)

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