Surface Pretreatment of Bulk GaN for Homoepitaxial Growth by Metalorganic Chemical Vapor Deposition
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1998-02-15
著者
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NAOI Yoshiki
Department of Electrical and Electronic Engineering, The University of Tokushima,
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KURAI Satoshi
Graduate School of Science and Engineering, Yamaguchi University
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SATO Hisao
Department of Dermatology, Jichi Medical School
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Sato Hisao
Nitride Semiconductor Co. Ltd.
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Sato H
Research And Development Center Gunze Limited
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SAKAI Shiro
Department of Electrical and Electronic Engineering, University of Tokushima
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Kurai Satoshi
Science And Engineering Yamaguchi University
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Sato Hiroyasu
Faculty Of Engineering Mie University
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Sato Hiroharu
Multimedia Eng. Lab.
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SUGAHARA Tomoya
Department of Electrical and Electronic Engineering, The University of Tokushima
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YAMASHITA Kenji
Department of Electrical and Electronic Engineering, University of Tokushima
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HAO Maosheng
Department of Electrical and Electronic Engineering, The University of Tokushima
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Sato H
Univ. Tokushima Tokushima Jpn
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Yamashita K
Department Of Astrophysics Nagoya University
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Hao Maosheng
Satellite Venture Business Laboratory Nitride Photonic Semiconductors Laboratory The University Of T
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Sugahara Tomoya
The Authors Are With The Department Of Electrical And Electronic Engineering University Of Tokushima
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Sugahara T
The Authors Are With The Department Of Electrical And Electronic Engineering University Of Tokushima
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Sugahara Tomoya
Graduate School Of Engineering The University Of Tokushima
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KURAI Satoshi
Department of Electrical and Electronic Engineering, University of Tokushima
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NISHINO Katsushi
Department of Electrical and Electronic Engineering, University of Tokushima
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Sakai Shiro
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Nishino K
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Nishino K
Department Of Electronic Science And Engineering Kyoto University
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Nishino Katsushi
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Naoi Y
Univ. Tokushima Tokushima Jpn
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Naoi Yoshiki
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Yamashita Koujin
Department Of Astrophysics Nagoya University
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Yamashita Kenji
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Kurai Satoshi
Department Of Electrical And Electronic Engineering Faculty Of Engineering Yamaguchi University
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Kurai Satoshi
Department Of Electrical And Electronic Engineering Tokushima University
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Hao Maosheng
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Yamashita K
Tsukuba Research Laboratory Nippon Sheet Glass Co. Ltd.
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Yamashita Kenichi
Division Of Science And Materials The Graduate School Of Science And Technology Kobe University
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Sato H
Department Of Applied Chemistry Faculty Of Engineering Kumamoto University
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SATO Hisano
Wireless Research Laboratory, Matsushita Elec. Ind., Co.
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Sunagawa Hiromi
Department Of Applied Physics Faculty Of Engineering Tohoku University
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Yamashita Kimihiro
Department Of Industrial Chemistry Faculty Of Engineering The University Of Tokyo:(present Address)d
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Sato Hisao
Department Of Dermatology Jichi Medical School
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Sakai Shiro
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Yamashita Kenji
Department Of Bioscience And Biotechnology Fuculty Of Engineering Okayama University
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Sato Hisao
Department of Applied Physics, Graduate School of Engineering, Tohoku University
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Naoi Yoshiki
Department of Electrical and Electronic Engineering, The University of Tokushima
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Sugahara Tomoya
The authors are with the Department of Electrical and Electronic Engineering, University of Tokushima
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