Near-ultraviolet LED of the External Quantum Efficiency Over 45% and its Application to High-color Rendering Phosphor Conversion White LEDs
スポンサーリンク
概要
- 論文の詳細を見る
Highly luminous efficiency and color rendering index (CRI) of 70 lm/W and 95 under low correlated color temperature (CCT) of 3177 K has been obtained by phosphor conversion (PC) white light-emitting diodes (LEDs) using near-ultra violet (n-UV) LEDs with th external quantum efficiency (EQE) of 46.7%. The homogeneous spatial color uniformity on choromaticity of PC white LEDs excited by n-UV LEDs are particularly adequate to the general lighting applications.
著者
-
FUKUI Takeshi
Graduate School of Science and Engineering, Yamaguchi University
-
SAKUTA Hiroaki
Graduate School of Science and Engineering, Yamaguchi University
-
MIYACHI Tsutomu
Graduate School of Science and Engineering, Yamaguchi University
-
KAMON Kunihito
Faculty of Engineering, Yamaguchi University
-
HAYASHI Hideki
Faculty of Engineering, Yamaguchi University
-
NAKAMURA Nobutaka
Choshu Industry CO., LTD
-
UCHIDA Yuji
Faculty of Engineering, Yamaguchi University
-
KURAI Satoshi
Graduate School of Science and Engineering, Yamaguchi University
-
TAGUCHI Tsunemasa
Graduate School of Science and Engineering, Yamaguchi University
-
Fukui Takeshi
Graduate School Of Science And Engineering Yamaguchi University
-
Miyachi Tsutomu
Graduate School Of Science And Engineering Yamaguchi University
-
TAGUCHI Takao
SORTEC Corporation
-
Uchida Yuji
Faculty Of Engineering Yamaguchi University
-
Kurai Satoshi
Science And Engineering Yamaguchi University
-
Kurai Satoshi
Graduate School Of Science And Engineering Yamaguchi University
-
Sakuta Hiroaki
Graduate School Of Science And Engineering Yamaguchi University
-
Kamon Kunihito
Graduate School Of Science And Engineering Yamaguchi University
-
Taguchi T
Department Of Materials Science And Engineering Yamaguchi University
-
Kurai Satoshi
Department Of Electrical And Electronic Engineering Faculty Of Engineering Yamaguchi University
-
Kurai Satoshi
Department Of Electrical And Electronic Engineering Tokushima University
-
Taguchi Tsunemasa
Graduate School Of Science And Engineering Yamaguchi University
-
Taguchi Tsunemasa
Faculty Of Engineering Yamaguchi University
-
Nakamura Nobutaka
Choshu Industry Co. Ltd
-
Hayashi Hideki
Graduate School Of Science And Engineering Yamaguchi University
-
Taguchi T
Department Of Electrical And Electronic Engineering Yamaguchi University
-
Taguchi Tsunemasa
Department Of Materials Science And Engineering Yamaguchi University
関連論文
- Threshold Current Density in ZnS/MgBeZnS Quantum Well Ultraviolet Lasers
- Development of White Light Emitting Diodes by Multi-layered Red, Green, and Bule Phosphors Excited by Near-ultraviolet Light Emitting Diodes
- Near-ultraviolet LED of the External Quantum Efficiency Over 45% and its Application to High-color Rendering Phosphor Conversion White LEDs
- Proton Transfer to Melamine Crosslinkers in X-Ray Chemically Amplified Negative Resists Studied by Time-Resolved and Steady-State Optical Absorption Measurement
- A Novel White LED Lighting System for Appreciation of Japanese Antique Ink Painting
- Direct Evidence that Dislocations are Non-Radiative Recombination Centers in GaN
- Surface Pretreatment of Bulk GaN for Homoepitaxial Growth by Metalorganic Chemical Vapor Deposition
- High-Density Recording Characteristics of a 90 mm Phase-Change Optical Disk
- Transient Species Induced in X-ray Chemically Amplified Positive Resists:Post-Exposure Delay Effect
- Fabrication of 0.1μm Line-and-Space Patterns using Soft X-Ray Reduction Lithography
- Sub-0.1 μm Resist Patterning in Soft X-Ray (13 nm) Projection Lithography
- Alternative Interpretation of Impulse Response of Phonon-Polaritons
- Excitation of Phonon-Polaritons with Asymmetric Transient Grating
- Dependence of Light Extraction From Near-Ultraviolet Light-Emitting Diodes on Refraction Index, Transmittance and Shape
- Biexciton Luminescence from GaN Epitaxial Layers
- Time-Resolved Observation of Laser-Induced Surface Reaction for Si/Cl_2 System Using Second-Harmonic Generation
- Excitonic Emission in GaN Films on AlN Substrates Using Microwave-Excited N Plasma Method
- Observation of Etching Reaction for Si/XeF_2 System Using Second-Harmonic Generatiorn
- Sub-100-nm Device Fabrication using Proximity X-Ray Lithography at Five Levels
- Study on the Luminous and Thermal Characteristics of High-Power Near-Ultraviolet LED Packages with Various Chip Arrangements
- Development of Light Sources by Large-Scale Integrated Light-Emitting Diodes
- Analysis of Chip/Bump/Ceramic Interface of Flip-Chip Bonded LED Directly on Ceramic Packages
- Optical Properties of Bound Excitons and Biexcitons in GaN(Special Issue on Blue Laser Diodes and Related Devices/Technologies)
- Excitonic Emissions under High Excitation of Hexagonal GaN Single Crystal Grown by Sublimation Method
- Growth of Bulk Gan Single Crystals by the Pressure-Controlled Solution Growth Method
- Developments of GaN Bulk Substrates for GaN Based LEDs and LDs(Special Issue on Blue Laser Diodes and Related Devices/Technologies)
- Growth of Bulk GaN Single Crystals by the Pressure-Controlled Solution Growth Method
- Structural Characterization of High-Quality ZnS Epitaxial Layers Grown on GaAs Substrates by Low-Pressure Metalorganic Chemical Vapor Deposition : Surfaces, Interfaces, and Films
- Internal Quantum Efficiency of Nitride-based Light-Emitting Diodes
- Optical Properties of ZnCdS:I Orange and ZnSTe:I White Thin Film Phosphor for High Ra White LED
- Temperature Dependence of Free-Exciton Ltuninescence from High-Quality ZnS Epitaxial Layers
- Optical characterization of high-quality ZnS epitaxial films grown by low-pressure metalorganic chemical vapor deposition
- Intense Ultraviolet Electroluminescence Properties of the High-Power InGaN-Based Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates
- Intense Ultraviolet Electroluminescence Properties of the High-Power InGaN-Based LEDs Fabricated on Patterned Sapphire Substrates
- Recombination Dynamics of Self-Trapped Excitons in the High-Efficient Blue LEDs under Reverse Bias Condition
- Dependence of Exciton-Longitudinal-Optical-Phonon Interaction Energy on Well Width in Cd_Zn_Se/ZnSe Multiple-Quantum Wells
- Reduction of Inhomogeneous Broadening of Exciton Luminescence in Cd_xZn_Se Ternary Alloys and Cd_xZn_Se-ZnSe Multiple Quantum Wells Grown by Molecular-Beam Epitaxy under Se-Excess Supply
- Effect of High Current Injection on the Blue Radiative Recombination in InGaN Single Quantum Well Light Emitting Diodes
- Radiative Recombination of Hot Electrons in InGaN Single Quantum Well Blue LEDs
- High-Performance X-Ray Mask Fabrication Using TaGeN Absorber and Dummy Pattern Method for Sub-100nm Proximity X-Ray Lithography : Instrumentation, Measurement, and Fabrication Technology
- Evaluation of Overlay Accuracy for 100-nm Ground Rule in Proximity X-Ray Lithography
- Performance of X-Ray Stepper for Next-Generation Lithography
- Pattern Etching of Ta X-ray Mask Absorber on SiC Membrane by Inductively Coupled Plasma
- Precise Stress Control of Ta Absorber using Low Stress Alumima Etching Mask for X-Ray Mask Fabrication
- Homoepitaxial Growth of GaN Layers by Reactive Molecular-Beam Epitaxy on Bulk GaN Single Crystals Prepared by Pressure-Controlled Solution Growth
- Effect of Cooling Process after GaN Epitaxial Growth by Radio-Frequency Molecular Beam Epitaxy : Semiconductors
- Effects of Hg Annealing on Photoluminescence Spectra of CdTe Crystals and MOCVD-Grown CdTe/GaAs Films
- Developing White LED Lighting Systems and Its Technological Roadmap in Japan
- Performance of a 600 Mbyte 90 mm Phase-Change Optical Disk against Disk Tilt
- Nucleation Control in the Growth of Bulk GaN by Sublimation Method
- Transmission Electron Microscopy of Sublimation-Grown GaN Single Crystal and GaN Homoepitaxial Film
- Growth and Characterization of Thick GaN by Sublimation Method and Homoepitaxial Growth by Metalorganic Chemical Vapor Deposition
- Photopumped Stimulated Emission from Homoepitaxial GaN Grown on Bulk GaN Prepared by Sublimation Method
- 60GHz mixer MMIC for millimeter wave radar
- Critical Layer Thickness of n-In_Al_AS/In_Ga_As/In_Al_AS Pseudomorphic Heterostructures Studied by Photoluminescence
- High Output Power Near-Ultraviolet and Violet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates Using Metalorganic Vapor Phase Epitaxy(LED Lighting Technologies)
- Fabrication and Illuminance Properties of Phosphor-conversion Green Light-emitting Diode with a Luminous Efficacy over 100 lm/W
- Exciton Binding Energy under Electric Field in ZnTe1-xSx/ZnS Strained-Layer Superlattices
- Valence Band Structure and Optical Gain in Cd_xZn_/ZnS Quantum Wells : Short Note
- Present Status of White LED Lighting Technologies in Japan(LED Lighting Technologies)
- Enhancement of Defocus Characteristics with Intermediate Phase Interference in Phase Shift Method (Special Issue on Quarter Micron Si Device and Process Technologies)
- Phase Defect Repair Method for Alternating Phase Shift Masks Conjugate Twin-Shifter Method
- Superior Illuminant Characteristics of Color Rendering and Luminous Efficacy in Multilayered Phosphor Conversion White Light Sources Excited by Near-Ultraviolet Light-Emitting Diodes
- The Concept of Fashion Design on the Basis of Color Coordination Using White LED Lighting
- Present Status of Energy Saving Technologies and Future Prospect in White LED Lighting
- Cathodoluminescence Study of Optical Inhomogeneity in Si-Doped AlGaN Epitaxial Layers Grown by Low-Pressure Metalorganic Vapor-Phase Epitaxy