Developments of GaN Bulk Substrates for GaN Based LEDs and LDs(Special Issue on Blue Laser Diodes and Related Devices/Technologies)

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概要

• 論文の詳細を見る

• In this paper, the recent development of GaN bulk substrates is reviewed. Among various works on HVPE thick epitaxial growth, the largest free-standing GaN substrates upto 3 × 4cm^2 has been first obtained by the HVPE method using NGO substrates, whose lattice constant has a good matching with that of GaN. For developing larger GaN substrates with lower production cost, the ultra-high pressure solution growth method is being developed not only in Poland but also in Japan under "The Light for the 21st Century" national project.

• 社団法人電子情報通信学会の論文
• 2000-04-25

著者

• Yabe Aya

  Department Of Molecular Biology Institute Of Gerontology Nippon Medical School

• KURAI Satoshi

  Graduate School of Science and Engineering, Yamaguchi University

• TAGUCHI Tsunemasa

  Graduate School of Science and Engineering, Yamaguchi University

• Seki Yoji

  The Authors Are With Central R&d Laboratory Japan Energy Corporation

• Kurai Satoshi

  Science And Engineering Yamaguchi University

• Taguchi T

  Department Of Materials Science And Engineering Yamaguchi University

• Kurai Satoshi

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Yamaguchi University

• Kurai Satoshi

  Department Of Electrical And Electronic Engineering Tokushima University

• YAMADA Yoichi

  The authors are with the Department of Electrical and Electronic Engineering, Yamaguchi University

• KURAI Satoshi

  The authors are with the Department of Electrical and Electronic Engineering, Yamaguchi University

• TAGUCHI Tsunemasa

  The authors are with the Department of Electrical and Electronic Engineering, Yamaguchi University

• ODA Osamu

  The authors are with Central R&D Laboratory, Japan Energy Corporation

• INOUE Takayuki

  The authors are with Central R&D Laboratory, Japan Energy Corporation

• WAKAHARA Akihiro

  The authors are with the Department of Electrical and Electronic Engineering, Toyohashi Univ. of Tec

• YOSHIDA Akira

  The authors are with the Department of Electrical and Electronic Engineering, Toyohashi Univ. of Tec

• Wakahara Akihiro

  The Authors Are With The Department Of Electrical And Electronic Engineering Toyohashi Univ. Of Tech

• Taguchi Tsunemasa

  Graduate School Of Science And Engineering Yamaguchi University

• Taguchi Tsunemasa

  Faculty Of Engineering Yamaguchi University

• Yoshida Akira

  First Department Of Internal Medicine University Of Fukui

• Yoshida A

  Department Of Applied Biological Sciences School Of Agricultural Sciences Nagoya University

• Yamada Y

  Department Of Electrical And Electronic Engineering Yamaguchi University

• Yamada Y

  Department Of Materials Science And Engineering Yamaguchi University

• Inoue T

  Ntt Docomo Chugoku Hiroshima‐shi Jpn

• Oda O

  The Authors Are With Central R & D Laboratory Japan Energy Co. Ltd.

• Yamada Yoichi

  Faculty Of Education Utsunomiya University

• Yoshida A

  First Department Of Internal Medicine University Of Fukui

• Taguchi Tsunemasa

  Department Of Materials Science And Engineering Yamaguchi University

• Taguchi Tsunemasa

  The Authors Are With The Department Of Electrical And Electronic Engineering Yamaguchi University

• Inoue Takayuki

  The authors are with Central R&D Laboratory, Japan Energy Corporation

• Oda Osamu

  The authors are with Central R & D Laboratory, Japan Energy Co., Ltd.

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