Inoue T | Ntt Docomo Chugoku Hiroshima‐shi Jpn
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概要
関連著者
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Inoue T
Ntt Docomo Chugoku Hiroshima‐shi Jpn
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KURAI Satoshi
Graduate School of Science and Engineering, Yamaguchi University
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TAGUCHI Tsunemasa
Graduate School of Science and Engineering, Yamaguchi University
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Seki Yoji
The Authors Are With Central R&d Laboratory Japan Energy Corporation
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Kurai Satoshi
Science And Engineering Yamaguchi University
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Kurai Satoshi
Department Of Electrical And Electronic Engineering Faculty Of Engineering Yamaguchi University
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Kurai Satoshi
Department Of Electrical And Electronic Engineering Tokushima University
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Taguchi Tsunemasa
Graduate School Of Science And Engineering Yamaguchi University
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Taguchi Tsunemasa
Faculty Of Engineering Yamaguchi University
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Yamada Y
Department Of Electrical And Electronic Engineering Yamaguchi University
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Yamada Y
Department Of Materials Science And Engineering Yamaguchi University
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Oda O
The Authors Are With Central R & D Laboratory Japan Energy Co. Ltd.
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Yamada Yoichi
Faculty Of Education Utsunomiya University
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Seki Yoji
Central Research Laboratory Kyocera Corporation
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Seki Yoji
Central R&d Laboratoy Japan Energy Corporation
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Taguchi T
Department Of Materials Science And Engineering Yamaguchi University
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ODA Osamu
Central Research and Development Laboratory, Japan Energy Corporation
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INOUE Takayuki
Central R&D Laboratory, Japan Energy Corporation
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KURAI Satoshi
Faculty of Engineering, Yamaguchi University
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YAMADA Yoichi
Faculty of Engineering, Yamaguchi University
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TAGUCHI Tsunemasa
Faculty of Engineering, Yamaguchi University
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Oda Osamu
Central R&d Laboratoy Japan Energy Corporation
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Taguchi Tsunemasa
Department Of Materials Science And Engineering Yamaguchi University
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Yabe Aya
Department Of Molecular Biology Institute Of Gerontology Nippon Medical School
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Takagi E
Toshiba Corp. Kawasaki‐shi Jpn
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Uchitomi N
Research And Development Center Toshiba Corp.
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Ishida Koichi
Optoelectronics Joint Research Laboratory:(present Address) Fundamental Research Laboratories Nec Co
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Takagi Eiji
Corporate Research & Development Center Toshiba Corporation
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Ishida K
Semiconductor System Engineering Center Toshiba Corporation
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Nagaoka Masami
Toshiba Research and Development Center
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Inoue Tomotoshi
Toshiba Research and Development Center
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Kawakyu Katsue
Toshiba Research and Development Center
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Obayashi Shuichi
Toshiba Research and Development Center
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Kayano Hiroyuki
Toshiba Research and Development Center
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Takagi Eiji
Toshiba Research and Development Center
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Tanabe Yoshikazu
Toshiba Research and Development Center
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Yoshimura Misao
Toshiba Research and Development Center
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Ishida Kenji
Toshiba Research and Development Center
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Kitaura Yoshiaki
Toshiba Research and Development Center
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Uchitomi Naotaka
Toshiba Research and Development Center
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Nagaoka M
Research And Development Center Toshiba Corp.
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Kitaura Y
Research And Development Center Toshiba Corp.
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Ishida K
Yamagata Univ. Yamagata Jpn
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Tanabe Y
Tokyo Inst. Of Technol. Yokohama‐shi
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Kawakyu Katsue
Toshiba Corp. Research And Development Center
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YAMADA Yoichi
The authors are with the Department of Electrical and Electronic Engineering, Yamaguchi University
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KURAI Satoshi
The authors are with the Department of Electrical and Electronic Engineering, Yamaguchi University
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TAGUCHI Tsunemasa
The authors are with the Department of Electrical and Electronic Engineering, Yamaguchi University
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ODA Osamu
The authors are with Central R&D Laboratory, Japan Energy Corporation
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INOUE Takayuki
The authors are with Central R&D Laboratory, Japan Energy Corporation
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WAKAHARA Akihiro
The authors are with the Department of Electrical and Electronic Engineering, Toyohashi Univ. of Tec
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YOSHIDA Akira
The authors are with the Department of Electrical and Electronic Engineering, Toyohashi Univ. of Tec
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Kayano Hiroyuki
Toshiba Corporation
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Wakahara Akihiro
The Authors Are With The Department Of Electrical And Electronic Engineering Toyohashi Univ. Of Tech
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吉村 昌弘
Division Of Electric Electronic And Information Engineering Graduate School Of Engineering Osaka Uni
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Yoshida Akira
First Department Of Internal Medicine University Of Fukui
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Yoshida A
Department Of Applied Biological Sciences School Of Agricultural Sciences Nagoya University
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Tanabe Y
Hiroshima Univ. Higashihiroshima Jpn
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Yoshida A
First Department Of Internal Medicine University Of Fukui
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Tanabe Yoshikazu
Research And Development Center Toshiba Corp.
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Taguchi Tsunemasa
The Authors Are With The Department Of Electrical And Electronic Engineering Yamaguchi University
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Obayashi S
Corporate R&d Center Toshiba Corp.
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Obayashi Shuichi
Toshiba Corporation
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石田 謙司
神戸大学 大学院工学研究科
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Inoue Takayuki
The authors are with Central R&D Laboratory, Japan Energy Corporation
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Oda Osamu
The authors are with Central R & D Laboratory, Japan Energy Co., Ltd.
著作論文
- A Monolithic GaAs Linear Power Amplifier Operating with a Single Low 2.7-V Supply for 1.9-GHz Digital Mobile Communication Applications
- Growth of Bulk Gan Single Crystals by the Pressure-Controlled Solution Growth Method
- Developments of GaN Bulk Substrates for GaN Based LEDs and LDs(Special Issue on Blue Laser Diodes and Related Devices/Technologies)
- Growth of Bulk GaN Single Crystals by the Pressure-Controlled Solution Growth Method