Growth of Bulk GaN Single Crystals by the Pressure-Controlled Solution Growth Method

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概要

• 論文の詳細を見る
• 1999-09-20

著者

• KURAI Satoshi

  Graduate School of Science and Engineering, Yamaguchi University

• TAGUCHI Tsunemasa

  Graduate School of Science and Engineering, Yamaguchi University

• Seki Yoji

  The Authors Are With Central R&d Laboratory Japan Energy Corporation

• Seki Yoji

  Central Research Laboratory Kyocera Corporation

• Seki Yoji

  Central R&d Laboratoy Japan Energy Corporation

• Kurai Satoshi

  Science And Engineering Yamaguchi University

• Kurai Satoshi

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Yamaguchi University

• Kurai Satoshi

  Department Of Electrical And Electronic Engineering Tokushima University

• ODA Osamu

  Central Research and Development Laboratory, Japan Energy Corporation

• INOUE Takayuki

  Central R&D Laboratory, Japan Energy Corporation

• KURAI Satoshi

  Faculty of Engineering, Yamaguchi University

• YAMADA Yoichi

  Faculty of Engineering, Yamaguchi University

• TAGUCHI Tsunemasa

  Faculty of Engineering, Yamaguchi University

• Taguchi Tsunemasa

  Graduate School Of Science And Engineering Yamaguchi University

• Taguchi Tsunemasa

  Faculty Of Engineering Yamaguchi University

• Yamada Y

  Department Of Electrical And Electronic Engineering Yamaguchi University

• Yamada Y

  Department Of Materials Science And Engineering Yamaguchi University

• Inoue T

  Ntt Docomo Chugoku Hiroshima‐shi Jpn

• Oda O

  The Authors Are With Central R & D Laboratory Japan Energy Co. Ltd.

• Oda Osamu

  Central R&d Laboratoy Japan Energy Corporation

• Yamada Yoichi

  Faculty Of Education Utsunomiya University

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