Preparation of TiO_2-SnO_2 Solid Solution Film by Ion Beam Sputtering
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概要
- 論文の詳細を見る
Thin film of rutile-type TiO_2-SnO_2 solid solution was successfully prepared by reactive ion beam sputtering without postannealing. The crystallinity of the film was highly dependent on the temperature of the substrate. The (101)-oriented film with rutile structure was obtained at substrate temperatures higher than 300℃.
- 社団法人応用物理学会の論文
- 1992-02-15
著者
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Seki Y
Sumitomo Electric Ind. Ltd. Hyogo Jpn
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Seki Yoji
Central Research Laboratory Kyocera Corporation
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Seki Yoji
Central R&d Laboratoy Japan Energy Corporation
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Okamura T
Central Research Laboratory Kyocera Corporation
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Okamura Takeshi
Department Of Electronics Faculty Of Engineering Kyoto University
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Okamura Takeshi
Electrotechnical Laboratory:(present Address) Central Research Laboratory Kyocera Corporation
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Okamura T
Optical Disks Development Department Division Of Information And Devices Technologies Asahi Chemical
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OKAMURA Takeshi
Central Research Laboratoty, Kyocera Corporation
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SAGAWA Nobukazu
Central Research Laboratoty, Kyocera Corporation
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Sagawa Nobukazu
Central Research Laboratory Kyocera Corporation
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