Solution Growth Combined with Solvent Evaporation : A Novel Technique in Solution Growth
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1999-10-15
著者
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Seki Yoji
Central Research Laboratory Kyocera Corporation
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Seki Yoji
Central R&d Laboratoy Japan Energy Corporation
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ODA Osamu
Central Research and Development Laboratory, Japan Energy Corporation
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Oda Osamu
Central R&d Laboratoy Japan Energy Corporation
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Sato Kenji
Central R&D Laboratoy, Japan Energy Corporation
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Sato Kenji
Central R&d Laboratoy Japan Energy Corporation
関連論文
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- Hydride Vapor Phase Epitaxy of GaN on NdGaO_3 Substrate and Realization of Freestanding GaN Wafers with 2-inch Scale
- Growth of Bulk Gan Single Crystals by the Pressure-Controlled Solution Growth Method
- Hydride Vapor Phase Epitaxy of GaN on NdGaO_3 Substrate and Realization of Freestanding GaN Wafers with 2-inch Scale
- Growth of Bulk GaN Single Crystals by the Pressure-Controlled Solution Growth Method
- Junction Properties and Gap States of ZnO Thin Film Prepared by Sol-Get Process
- Preparation of n-ZnO/p-Si Heterojunction by Sol-Gel Process
- Solution Growth Combined with Solvent Evaporation : A Novel Technique in Solution Growth
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- Preparation of TiO_2-SnO_2 Solid Solution Film by Ion Beam Sputtering
- Numerical Simulation of Static and Dynamic Characteristics of Dual-Gate Metal Oxide Semiconductor Thyristor
- Influence of Dopants on Characteristics of X-Ray Detectors Fabricated from Indium-, Gallium-, and Chlorine-Doped Cadmium Telluride Single Crystals