Junction Properties and Gap States of ZnO Thin Film Prepared by Sol-Get Process
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1992-09-30
著者
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Seki Y
Sumitomo Electric Ind. Ltd. Hyogo Jpn
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Seki Yoji
Central Research Laboratory Kyocera Corporation
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Seki Yoji
Central R&d Laboratoy Japan Energy Corporation
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OKUSHI Hideyo
Diamond Research Center, National Institute of Advanced Industrial Science and Technology (AIST)
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OKUSHI Hideyo
Electrotechnical Laboratory
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Okamura T
Central Research Laboratory Kyocera Corporation
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Okamura Takeshi
Department Of Electronics Faculty Of Engineering Kyoto University
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Okamura Takeshi
Electrotechnical Laboratory:(present Address) Central Research Laboratory Kyocera Corporation
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Okamura Takeshi
Electrotechnical Laboratory
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Okushi H
Electrotechnical Lab. Ibaraki Jpn
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Okushi Hideyo
Energy Technology Research Institute National Institute Of Advanced Industrial Science And Technolog
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Nagakari S
R&d Center Kagoshima Kyocera Corporation
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Nagakari Shoken
Central Research Laboratory Kyocera Corporation
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Okamura T
Optical Disks Development Department Division Of Information And Devices Technologies Asahi Chemical
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