High-Performance Diamond Metal-Semiconductor Field-Effect Transistor with 1 μm Gate Length
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1999-11-01
著者
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Yamanaka Sadanori
Nanotechnology Research Institute National Institute Of Advanced Industrial Science And Technology (
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YAMANAKA Shoji
Faculty of Engineering,Hiroshima University
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Kawarada Hiroshi
School Of Science And Engineering Waseda University
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Kawarada Hiroshi
School Of Science & Engineering Waseda University
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OKUSHI Hideyo
Diamond Research Center, National Institute of Advanced Industrial Science and Technology (AIST)
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UMEZAWA Hitoshi
National Institute of Advanced Industrial Science and Technology (AIST)
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UMEZAWA Hitoshi
School of Science and Engineering
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TSUGAWA Kazuo
School of Science and Engineering, Waseda University
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YAMANAKA Sadanori
ETL (Electrotechnical Laboratory)
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TAKEUCHI Daisuke
ETL (Electrotechnical Laboratory)
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OKUSHI Hideyo
ETL (Electrotechnical Laboratory)
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Kawarada H
School Of Science And Engineering Waseda University
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Okushi H
Electrotechnical Lab. Ibaraki Jpn
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Okushi Hideyo
Energy Technology Research Institute National Institute Of Advanced Industrial Science And Technolog
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Tsugawa Kazuo
Core Research For Evolutional Science And Technology (crest) Japan Science And Technology Corporatio
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Tachiki Minoru
School Of Science And Engineering:crest Jst (japan Science And Technology Corporation)
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Takeuchi Daisuke
Energy Technology Research Institute National Institute Of Advanced Industrial Science And Technolog
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Tachiki M
Energy Technology Research Institute National Institute Of Advanced Industrial Science And Technolog
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Umezawa H
Core Research For Evolutional Science And Technology (crest) Japan Science And Technology Corporatio
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Tsugawa Kazuo
School Of Science And Engineering Waseda University:crest Jst(japan Science And Technology Corporati
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Kawarada Hiroshi
Nanotechnology Research Center Waseda University
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Taniuchi Hirotada
School Of Science And Engineering Waseda University
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Umezawa Hitoshi
School Of Science And Engineering Waseda University:crest Jst (japan Science And Technology Corporation)
関連論文
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- Holes in the Valence Band of Superconducting Boron-Doped Diamond Film Studied by Soft X-ray Absorption and Emission Spectroscopy(Condensed matter : electronic structure and electrical, magnetic, and optical properties)
- Multiresolution Model Construction from Scattered Range Data by Hierarchical Cube-Based Segmentation
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- Hillock-Free Heavily Boron-Doped Homoepitaxial Diamond Films on Misoriented (001) Substrates
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- Low-Temperature Synthesis of Diamond Films Using Magneto-Microwave Plasma CVD
- The Synthesis of Diamond Films at Lower Pressure and Lower Temperature Using Magneto-Microwave Plasma CVD
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- Fabrication of T-Shaped Gate Diamond Metal-Insulator-Semiconductor Field-Effect Transistors
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- High-Resolution Electron Microscope Study of Silicon on Insulator Structure Grown by Lateral Solid Phase Epitaxy
- Structural Study of PtSi/(111)Si Interface with High-Resolution Electron Microscopy
- Blue and Green Cathodoluminescence of Synthesized Diamond Films Formed by Plasma-Assisted Chemical Vapour Deposition : Optical Properties of Condensed Matter
- Characterization of Diamond Particles and Films Formed by Plasma-Assisted Chemical Vapour Deposition Using High-Voltage Electron Microscopy
- Large Area Chemical Vapour Deposition of Diamond Particles and Films Using Magneto-Microwave Plasma
- Cu/CaF_2/Diamond Metal-Insulator-Semiconductor Field-Effect Transistor Utilizing Self-Aligned Gate Fabrication Process
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- Low Temperature Synthesis of Extremely Dense and Vertically Aligned Single-Walled Carbon Nanotubes
- Electron Affinity and Surface Re-ordering of Homoepitaxial Diamond (100)
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- Preparation of n-ZnO/p-Si Heterojunction by Sol-Gel Process
- RF Diamond Transistors : Current Status and Future Prospects
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- Polycrystalline Diamond/Hydrogenated Amorphous Silicon P-N Heterojunction
- Soft X-ray Core-Level Photoemission Study of Boron Sites in Heavily Boron-Doped Diamond Films(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
- Electron Emission from a Diamond (111) p-i-n^+ Junction Diode with Negative Electron Affinity during Room Temperature Operation
- Electrically Isolated Metal-Semiconductor Field Effect Transistors and Logic Circuits on Homoepitaxial Diamonds
- Investigation of Current-Voltage Characteristics of Oxide Region Induced by Atomic Force Microscope on Hydrogen-Terminated Diamond Surface
- RF Performance of High Transconductance and High-Channel-Mobility Surface-Channel Polycrystalline Diamond Metal-Insulator-Semiconductor Field-Effect Transistors
- Effect of Cl^- Ionic Solutions on Electrolyte-Solution-Gate Diamond Field-Effect Teansistors
- Microwave Performance of Diamond Field-Effect Transistors
- Temperature Dependence of Exciton Reflection Spectra in Monoclinic Zinc Diphosphide
- Electrical Properties of Carbon Nanotubes Grown at a Low Temperature for Use as Interconnects
- High Frequency Performance of Diamond Field-Effect Transistor
- Temperature and Incident Beam-Current Dependence of Dominant Free-Exciton Recombination Radiation from High-Purity Chemical Vapor Deposition (CVD) Diamonds
- Low-Pressure Diamond Nucleation and Growth on Cu Substrate
- Effect of Electron and Neutron Irradiation on the Cathodoluminescence of Nitrogen-Doped CVD Diamond
- Characterization of Hybridization on Diamond Solution-Gate Field-Effect Transistors for Detecting Single Mismatched Oligonucleotides
- High-Performance P-Channel Diamond Metal--Oxide--Semiconductor Field-Effect Transistors on H-Terminated (111) Surface
- Initial Growth of Heteroepitaxial Diamond on Si(001) Substrates via β-SiC Buffer Layer
- Structure of Chemical Vapor Deposited Diamond (111) Surfaces by Scanning Tunneling Microscopy
- High-Current Metal Oxide Semiconductor Field-Effect Transistors on H-Terminated Diamond Surfaces and Their High-Frequency Operation
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