Fabrication of T-Shaped Gate Diamond Metal–Insulator–Semiconductor Field-Effect Transistors

概要

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Diamond metal–insulator–semiconductor field effect transistors (MISFETs) with gates of 0.2–0.9 μm length and T-shape were realized by trilayer resist electron-beam lithography. FETs show a cut-off frequency ($ f_{\text{T}}$) of 11 GHz and maximum oscillation frequency ($ f_{\text{max}}$) of 22 GHz. The $ f_{\text{max}}/ f_{\text{T}}$ ratio of this FET was more than double that of FETs with a conventional gate structure and the same gate length. The $ f_{\text{T}}$ of 11 GHz was half the maximum for diamond FETs due to parasitic capacitance at the gate–drain and gate–source electrodes. The T-shaped gate structure and the source-to-drain spacing must be optimized to reduce parasitic capacitance between each electrode.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2006-07-15