Temperature and Incident Beam-Current Dependence of Dominant Free-Exciton Recombination Radiation from High-Purity Chemical Vapor Deposition (CVD) Diamonds
スポンサーリンク
概要
- 論文の詳細を見る
Dominant free-exciton (FE) recombination radiation has been obtained from high-purity Chemical vapor deposition (CVD) diamond synthesized on Cu substrates by means of microwave plasma CVD using CH_4+O_2 diluted with H_2. The intensity of FE emission is almost constant between 80 K and 170 K, and is reduced by two orders of magnitude at room temperature. The emission increases in proportion to the incident beam current from 1×10^<-9> A to 2×10^<-6> A. The spectrum shapes between 200 nm and 600 nm do not depend on the beam current. In addition, the isotopic effect on the FE emission peak shift has been observed in the spectrtum from ^<13>C-enriched (96.6%) CVD diamond for the first time.
- 社団法人応用物理学会の論文
- 1994-08-01
著者
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Kawarada Hiroshi
School Of Science & Engineering Waseda University
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YAMAGUCHI Akira
Department of Chemistry, Graduate School of Science, Tohoku University
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吉原 章
石巻専修大 理工
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KAWARADA Hiroshi
Department of Electrical Engineering, Faculty of Engineering, Osaka University
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TSUTSUMI Takahiro
Department of Pediatrics, The Cardiovascular Research Institute
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Kawarada H
School Of Science And Engineering Waseda University
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YAMASHITA Satoshi
Frontier Technology Laboratory, Research and Development Department, Tokyo Gas Co. Ltd.
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Yamashita Satoshi
Institute of Multidisciplinary Research for Advanced Materials, Tohoku University
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Kawarada Hiroshi
Nanotechnology Research Center Waseda University
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Tsutsumi Takahiro
Department Of Electronics & Communication Engineering School Of Science & Engineering Waseda
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Yamashita S
Tohoku Univ.
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Yamaguchi Akira
Department Of Chemistry Graduate School Of Science Tohoku University
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Yamashita Satoshi
Institute Of Multidisciplinary Research For Advanced Materials Tohoku University
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Yamaguchi Akira
Department Of Biology Faculty Of Science Hirosaki University
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