RF Performance of High Transconductance and High-Channel-Mobility Surface-Channel Polycrystalline Diamond Metal-Insulator-Semiconductor Field-Effect Transistors
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概要
- 論文の詳細を見る
The RF device potential of surface-channel polycrystalline diamond metal-insulator-semiconductor field-effect transistors (MISFETs) is demonstrated for the first time, Utilizing a self-aligned gate field-effect transistor (FET) fabrication process, effective transconductance of 70mS/mm is realized at 0.7μm gate length. This FET also shows high f_T and f_<max> of 2.7 and 3.8GHz, respectively. However, the breakdown voltage and f_<max>/f_T ratio are lower than those for the homoepitaxial layer because of the parasitic capacitance at the grain boundaries in the drain region. Because of the fluctuation of channel mobility, the fluctuation of g_m and f_T rs observed. In order to realize high-power operation at high frequency, the fabrication of the FET on a single grain to reduce the parasitic capacitance is required. [DOI: 10.1143/JJAP.41.2611]
- 社団法人応用物理学会の論文
- 2002-04-30
著者
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Kawarada Hiroshi
School Of Science And Engineering Waseda University
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Kawarada Hiroshi
School Of Science & Engineering Waseda University
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UMEZAWA Hitoshi
National Institute of Advanced Industrial Science and Technology (AIST)
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UMEZAWA Hitoshi
School of Science and Engineering
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ISHIZAKA Hiroaki
School of Science and Engineering
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TACHIKI Minoru
School of Science and Engineering
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TANIUCHI Hirotada
School of Science and Engineering, Waseda University
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ARIMA Takuya
School of Science and Engineering, Waseda University
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Kawarada H
School Of Science And Engineering Waseda University
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Tachiki Minoru
School Of Science And Engineering:crest Jst (japan Science And Technology Corporation)
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Takeuchi Daisuke
Energy Technology Research Institute National Institute Of Advanced Industrial Science And Technolog
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KOIDL Peter
Fraunhofer-Institute fur Angewandte Festkoperphysik
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Tachiki M
Energy Technology Research Institute National Institute Of Advanced Industrial Science And Technolog
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Umezawa H
Core Research For Evolutional Science And Technology (crest) Japan Science And Technology Corporatio
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FUJIHARA Naoki
School of Science and Engineering, Waseda University
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WILD Christoph
Fraunhofer-Institut fur Angewandte Festkorperphysik
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Arima Takuya
School Of Science And Engineering Waseda University:crest Jst (japan Science And Technology Corporat
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Kawarada Hiroshi
Nanotechnology Research Center Waseda University
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Fujihara N
School Of Science And Engineering Waseda University:crest Jst (japan Science And Technology Corporat
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Koidl Peter
Fraunhofer-institut Fur Angewandte Festkorperphysik
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Ishizaka Hiroaki
School Of Science And Engineering:crest Jst (japan Science And Technology Corporation)
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Taniuchi Hirotada
School Of Science And Engineering Waseda University
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Umezawa Hitoshi
School Of Science And Engineering Waseda University:crest Jst (japan Science And Technology Corporation)
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