High-Performance P-Channel Diamond Metal--Oxide--Semiconductor Field-Effect Transistors on H-Terminated (111) Surface
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概要
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Through the enhancement of hole accumulated density near hydrogen-terminated (111) diamond surfaces, low sheet resistance (${\sim}5$ k$\Omega$/sq) has been obtained compared with widely used (001) diamond surfaces (${\sim}10$ k$\Omega$/sq). Using the hole accumulation layer channel, a high drain current density of $-850$ mA/mm was obtained in p-channel metal--oxide--semiconductor field-effect transistors (MOSFETs). This drain current density is the highest value for diamond FETs. The high drain current on the (111) surface is attributed to two factors: The low source and drain resistances owing to the high hole carrier density and the high channel mobility at a high gate--source voltage on the (111) surface.
- 2010-04-25
著者
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Kawarada Hiroshi
School Of Science And Engineering Waseda University
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Kawarada Hiroshi
School Of Science & Engineering Waseda University
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HIRAMA Kazuyuki
School of Science and Engineering, Waseda University
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Sato Syunsuke
School Of Science And Engineering Waseda University
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Hirama Kazuyuki
School Of Science And Engineering Waseda University
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Tsuge Kyosuke
School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjyuku, Tokyo 169-8555, Japan
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Tsuno Tetsuya
School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjyuku, Tokyo 169-8555, Japan
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Jingu Yoshikatsu
School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjyuku, Tokyo 169-8555, Japan
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Yamauchi Shintaro
School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjyuku, Tokyo 169-8555, Japan
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Tsuge Kyosuke
School Of Science And Engineering Waseda University
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Tsuno Tetsuya
School Of Science And Engineering Waseda University
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Jingu Yoshikatsu
School Of Science And Engineering Waseda University
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Yamauchi Shintaro
School Of Science And Engineering Waseda University
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