Initial Growth of Heteroepitaxial Diamond on Si(001) Substrates via β-SiC Buffer Layer

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概要

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• Negative substrate-bias effects on diamond heteroepitaxial nucleation have been investigated using microwave plasma-assisted chemical vapor deposition. The density and the percentage of azimuthally ordered particles grown on carburized Si(001) or on high-quality β-SiC(001) have been estimated by varying the bias-treatment conditions (reaction pressure, microwave power and bias voltage). The percentage of azimuthally ordered particles increases under the following conditions: pressure of 50 Torr, substrate temperature of 〜900℃ and bias voltage of -50 V. Smooth heteroepitaxial diamond films of 〜4 μm thickness have been successfully synthesized on high-quality β-SiC(001) by the bias treatment under the above conditions followed by a two-step growth process: <001> fast growth and <111> fast growth. The initial growth of these films has been governed by the Volmer-Weber mode, where [1^^-10]- or [110]-directed protrusions have been formed on β-SiC(001). Diamond islands grew along the grooves between the β-SiC protrusions in the initial stage.

• 社団法人応用物理学会の論文
• 1995-09-15

著者

• Kawarada Hiroshi

  School Of Science And Engineering Waseda University

• Kawarada Hiroshi

  School Of Science & Engineering Waseda University

• NAGASAWA Hiroyuki

  R&D Center, HOYA Corporation

• Nakamura Naofumi

  School Of Science And Engineering Waseda University

• Nagasawa Hiroyuki

  R&d Center Hoya Corporation

• SUESADA Tsuyoshi

  School of Science and Engineering, Waseda University

• Suesada Tsuyoshi

  School Of Science And Engineering Waseda University

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