Crystal Structure of GaN Grown on 3C-SiC Substrates by Metalorganic Vapor Phase Epitaxy
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概要
- 論文の詳細を見る
GaN films were grown on 3C-SiC substrates by metalorganic vapor phase epitaxy (MOVPE) using 1,1-dimethylhydrazine (DMHy) as the N source. The crystal structure was strongly affected by both the growth temperature and the V/III ratio. At 600° C, only hexagonal GaN films with their c-axis perpendicular to the substrate surface were grown. At 800° C, relatively high V/III ratios resulted in the growth of hexagonal GaN with their c-axis oriented in the [111] direction while cubic GaN films were obtained at lower V/III ratios. The origin of [111]-oriented hexagonal GaN is also discussed.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1997-07-15
著者
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Wu Jun
Department Of Applied Physics The University Of Tokyo
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NAGASAWA Hiroyuki
R&D Center, HOYA Corporation
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YAMAGUCHI Yoichi
R&D Center, HOYA Corporation
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Yaguchi Hiroyuki
Department Of Applied Physics The University Of Tokyo
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Shiraki Yasuhiro
Research Center For Advanced Science And Technology (rcast) The University Of Tokyo
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Ito Ryoichi
Department Of Applied Physics Faculty And Engineering University Of Tokyo
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Onabe Kentaro
Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, Kashiwa, Chiba 277-8561, Japan
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Onabe Kentaro
Department of Applied Physics, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113, Japan
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Yamaguchi Yoichi
R&D Center, HOYA Corporation, 3-3-1 Musashino, Akishima-shi, Tokyo 196, Japan
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Shiraki Yasuhiro
Research Center for Advanced Science and Technology (RCAST), The University of Tokyo,
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Wu Jun
Department of Applied Physics, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113, Japan
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