NAGASAWA Hiroyuki | R&D Center, HOYA Corporation
スポンサーリンク
概要
関連著者
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NAGASAWA Hiroyuki
R&D Center, HOYA Corporation
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Wu Jun
Department Of Applied Physics The University Of Tokyo
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YAMAGUCHI Yoichi
R&D Center, HOYA Corporation
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Yaguchi Hiroyuki
Department Of Applied Physics The University Of Tokyo
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Nagasawa Hiroyuki
R&d Center Hoya Corporation
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Shiraki Yasuhiro
Research Center For Advanced Science And Technology (rcast) The University Of Tokyo
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Ito Ryoichi
Department Of Applied Physics Faculty And Engineering University Of Tokyo
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Onabe Kentaro
Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, Kashiwa, Chiba 277-8561, Japan
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Kawarada Hiroshi
School Of Science And Engineering Waseda University
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Kawarada Hiroshi
School Of Science & Engineering Waseda University
著作論文
- Crystal Structure of GaN Grown on 3C-SiC Substrates by Metalorganic Vapor Phase Epitaxy
- Initial Growth of Heteroepitaxial Diamond on Si(001) Substrates via β-SiC Buffer Layer
- Crystal Structure of GaN Grown on 3C-SiC Substrates by Metalorganic Vapor Phase Epitaxy