High-Quality-Factor Light-Emitting Diodes with Modified Photonic Crystal Nanocavities Including Ge Self-Assembled Quantum Dots on Silicon-On-Insulator Substrates
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概要
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High-quality-factor room-temperature light-emitting diodes based on Ge self-assembled quantum dots are successfully fabricated by employing a lateral p--i--n diode structure and a modified L3-type photonic crystal nanocavity. Sharp resonant peaks with Q-factor larger than 800, corresponding to the cavity modes, are clearly observed in the electroluminescence spectrum under 50 μA injected current, which exceeds the performances of previously reported devices [X. Xu et al.: Opt. Express 20 (2012) 14714]. The output power collected by a single-mode fiber is measured to be about 6 pW under 3 mA current, indicating a forward step towards silicon-based light sources for practical applications.
- 2012-10-25
著者
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Shiraki Yasuhiro
Research Center For Advanced Science And Technology (rcast) The University Of Tokyo
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Xu Xuejun
Research Center For Silicon Nano-science Advanced Research Laboratories Tokyo City University
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Maruizumi Takuya
Research Center For Silicon Nano-science Advanced Research Laboratories Tokyo City University
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Maruizumi Takuya
Research Center for Silicon Nano-Science, Advanced Research Laboratories, Tokyo City University, Setagaya, Tokyo 158-0082, Japan
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Chiba Taichi
Research Center for Silicon Nano-Science, Advanced Research Laboratories, Tokyo City University, Setagaya, Tokyo 158-0082, Japan
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Nakama Tatsuya
Research Center for Silicon Nano-Science, Advanced Research Laboratories, Tokyo City University, Setagaya, Tokyo 158-0082, Japan
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CHIBA Taichi
Research Center for Silicon Nano-Science, Advanced Research Laboratories, Tokyo City University
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Shiraki Yasuhiro
Research Center for Silicon Nano-Science, Advanced Research Laboratories, Tokyo City University, Setagaya, Tokyo 158-0082, Japan
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Xu Xuejun
Research Center for Silicon Nano-Science, Advanced Research Laboratories, Tokyo City University, Setagaya, Tokyo 158-0082, Japan
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NAKAMA Tatsuya
Research Center for Silicon Nano-Science, Advanced Research Laboratories, Tokyo City University
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