Thickness Dependence of Strain Field Distribution in SiGe Relaxed Buffer Layers
スポンサーリンク
概要
- 論文の詳細を見る
The buffer thickness dependence of strain field distribution was investigated in SiGe heterostructures by micro-Raman spectroscopy. Crosshatch-like strain fluctuations were clearly observed in strained-Si and SiGe buffer layers, and the fluctuation wavelength was found to increase almost linearly with increasing buffer thickness. It was also found that SiGe homoepitaxial growth on planarized SiGe buffer layers gave rise to crosshatch roughness on the surface with almost the same morphology as the strain distribution, indicating that the strain fluctuation caused the roughness formation associated with growth kinetics. The strain fluctuation still remained on the buffer layer thicker than 7 μm, which should be taken into consideration for device applications.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-12-15
著者
-
NAKAGAWA Kiyokazu
Center for Crystal Science and Technology, University of Yamanashi
-
Usami Noritaka
Institute For Material Research Tohoku University
-
Sawano Kentarou
Research Center For Silicon Nano-science Advanced Research Laboratories Musashi Institute Of Technol
-
Arimoto Keisuke
Center For Crystal Science And Technology University Of Yamanashi
-
Shiraki Yasuhiro
Research Center For Advanced Science And Technology (rcast) The University Of Tokyo
-
Sawano Kentarou
Research Center for Silicon Nano-Science, Advanced Research Laboratories, Musashi Institute of Technology, 8-15-1 Todoroki, Setagaya-ku, Tokyo 158-0082, Japan
-
Shiraki Yasuhiro
Research Center for Silicon Nano-Science, Advanced Research Laboratories, Musashi Institute of Technology, 8-15-1 Todoroki, Setagaya-ku, Tokyo 158-0082, Japan
-
Usami Noritaka
Institute for Material Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
-
Nakagawa Kiyokazu
Center for Crystal Science and Technology, Faculty of Engineering, University of Yamanashi, Kofu 400-8511, Japan
関連論文
- Floating Zone Growth of Si Bicrystals Using Seed Crystals with Artificially Designed Grain Boundary Configuration
- Comparison of Nonlocal and Local Magnetoresistance Signals in Laterally Fabricated Fe_3Si/Si Spin-Valve Devices
- Strain Relaxation and Induced Defects in SiGe Thin Films Grown on Ion-Implanted Si Substrates
- Enhancement of Strain Relaxation of SiGe Thin Layers by Pre-Ion-Implantation into Si Substrates
- A Novel Triple δ-Doped SiGe Heterostructure Field-Effect Transistor
- Fabrication of Periodically Domain-Inverted AlGaAs Quasi-Phase-Matched Devices by GaAs/Ge/GaAs Sublattice Reversal Epitaxy
- Sublattice Reversal in GaAs/Si/GaAs (100) Heterostructures by Molecular Beam Epitaxy
- Preparation of a TiO-2 Film Coated Si Device for Photo-Decomposition of Water by CVD Method Using Ti(OPr^i)_4
- Functional Enhancement of Metal-Semiconductor-Metal (MSM) Infrared Photodetectors on Heteroepitaxial SiGe-on-Si Using the Anodic Oxidation/Passivation Method
- High Sensitive Imaging of Atomic Arrangement of Ge Clusters Buried in a Si Crystal by X-ray Fluorescence Holography
- Modification of Local Structure and Its Influence on Electrical Activity of Near (310) *5 Grain Boundary in Bulk Silicon
- Rectangular AlGaAs/AlAs Quantum Wires Using Spontaneous Vertical Quantum Wells
- The in Situ Growth of Lateral Confinement Enhanced Rectangular AlGaAs/AlAs Quantum Wires by Utilizing the Spontaneous Vertical Quantum Wells
- Introduction of Uniaxial Strain into Si/Ge Heterostructures by Selective Ion Implantation
- Development of Thin SiGe Relaxed Layers with High-Ge Composition by Ion Implantation Method and Application to Strained Ge Channels
- On Effects of Gate Bias on Hole Effective Mass and Mobility in Strained-Ge Channel Structures
- Thickness Dependence of Strain Field Distribution in SiGe Relaxed Buffer Layers
- Strain-Field Evaluation of Strain-Relaxed Thin SiGe Layers Fabricated by Ion Implantation Method
- Optical Detection of Interdiffusion in Strained Si_Ge_x/Si Quantum Well Structures
- Photoluminescence of Si_Ge_x/Si Quantum Welts with Abrupt Interfaces Formed by Segregant-Assisted Growth
- Band-Edge Photoluminescence of SiGe/Strained-Si/SiGe Type-II Quantum Wells on Si(100)
- Luminescence from Strained Si_Ge_x/Si Quantum Wells Grown by Si Molecular Beam Epitaxy
- Photogeneration and Transport of Carriers in Strained Si_Ge_x/Si Quantum Well Structures
- Quantum Size Effect of Excitonic Band-Edge Luminescence in Strained Si_Ge_x/Si Single Quantum Well Structures Grown by Gas-Source Si Molecular Beam Epitaxy
- Band-Edge Luminescence of Strained Si_xGe_/Si Single Quantum Well Structures Grown on Si(111) by Si Molecular Beam Epitaxy
- Electroluminescence from Strained SiGe/Si Quantum Well Structures Grown by Solid Source Si Molecular Beam Epitaxy
- Structural Origin of a Cluster of Bright Spots in Reverse Bias Electroluminescence Image of Solar Cells Based on Si Multicrystals
- On the Origin of Improved Conversion Efficiency of Solar Cells Based on SiGe with Compositional Distribution
- Evidence of the Presence of Built-in Strain in Multicrystalline SiGe with Large Compositional Distribution
- Control of Macroscopic Absorption Coefficient of Multicrystalline SiGe by Microscopic Compositional Distribution : Semiconductors
- Growth of Si_xGe_(x〓0.15) Bulk Crystal with Uniform Composition Utilizing in situ Monitoring of the Crystal-solution Interface
- In Situ Measurement of Composition in High-Temperature Solutions by X-Ray Fluorescence Spectrometry
- Fabrication of SiGe-on-Insulator through Thermal Diffusion of Ge on Si-on-Insulator Substrate
- On the Controlling Mechanism of Preferential Orientation of Polycrystalline-Silicon Thin Films Grown by Aluminum-Induced Crystallization
- Toward high-efficiency thin-film solar cells using semiconducting BaSi_2(Session 1A : Emerging Device Technology 1)
- Toward high-efficiency thin-film solar cells using semiconducting BaSi_2(Session 1A : Emerging Device Technology 1)
- Photoresponse Properties of Polycrystalline BaSi_2 Films Grown on SiO_2 Substrates Using (111)-Oriented Si Layers by an Aluminum-Induced Crystallization Method
- Effect of Atomic and Molecular Hydrogen Irradiation on Ge Surface Segregation during Si Molecular Beam Epitaxy
- Microstructure of Visible Light Emitting Porous Silicon
- Fine Structure of Porous Si with Visible Photoluminescence
- Optical Investigations of Solid-Phase Crystallization of Si_Ge_x
- Optical Investigations of Solid-Phase Crystallization (SPC) Properties of Si_Ge_X
- Atomic-Layer Doping in Si_Ge_x/Si/Si_Ge_x Heterostructures by Two-Step Solid-Phase Epitaxy
- Atomic-Layer Doping in Si_Ge_x/Si/Si_Ge_x Heterostructures by Two-Step Solid-Phase Epitaxy
- Surface Segregation Behaviors of B, Ga, and Sb during Si Molecular Beam Epitaxy : Calculation Using a First-Principles Method
- Ultrahigh Electron Mobilities in Si_Ge_x/Si/Si_Ge_x Heterostructures with Abrupt Interfaces Formed by Solid-Phase Epitaxy
- Surface Segregation Behaviors of B, Ga, and Sb during Si-MBE : Calculation Using a First-Principle Method
- Quantitative Correlation between the Surface Segregation of Ge and the Light Emission of Si/SiGe/Si Heterostructures
- Ultrahigh Electron Mobilities in Si_Ge_x/Si/Si_Ge_x Heterostructures with Abrupt Interfaces Formed by Solid-Phase Epitaxy
- Local-Symmetry Induced Light Emission from Si/Si_Ge_x/Si Quantum Wells
- Quantitative Evaluation of Silicon Displacement Induced by Arsenic Implantation Using Silicon Isotope Superlattices
- 1/f Fluctuations in LiCl Solution
- Mobility Enhancement in Strained Ge Heterostructures by Planarization of SiGe Buffer Layers Grown on Si Substrates
- Fabrication of n^+-BaSi_2/p^+-Si Tunnel Junction on Si(111) Surface by Molecular Beam Epitaxy for Photovoltaic Applications
- Effect of Molecular Structure of Chiral Fluorinated Compounds on Spontaneous Polarization of Ferroelectric Liquid Crystals
- Tilt Angle Behavior of Smectic C Phase in Binary Systems
- Growth of Compositionally Graded SiGe Bulk Crystal and Its Application As Substrate with Lateral Variation in Ge Content
- Nanostructure Fabrication Based on Sporntaneous Formation Mechanisms
- Formation of High-Density Etch Pits on a Si Surface after Low-Temperature Heating in an Ultrahigh Vacuum
- In situ Observation of Polycrystalline Silicon Thin Films Grown Using Aluminum-Doped Zinc Oxide on Glass Substrate by the Aluminum-Induced Crystallization
- Acceptorlike Behavior of Defects in SiGe Alloys Grown by Molecular Beam Epitaxy
- Line Width Dependence of Anisotropic Strain State in SiGe Films Induced by Selective Ion Implantation
- Effect of Solid-Phase-Epitaxy Si Layers on Suppression of Sb Diffusion from Sb-Doped n-BaSi/p-Si Tunnel Junction to Undoped BaSi Overlayers (Special Issue : Solid State Devices and Materials (2))
- Effect of Phase Purity on Dislocation Density of Pressurized-Reactor Metalorganic Vapor Phase Epitaxy Grown InN (Special Issue : Solid State Devices and Materials (2))
- Room-Temperature Observation of Size Effects in Photoluminescence of Si.Ge./Si Nanocolumns Prepared by Neutral Beam Etching
- High-Temperature Solution Growth and Characterization of Chromium Disilicide
- Generation and Wavelength Control of Resonant Luminescence from Silicon Photonic Crystal Microcavities with Ge Dots
- Formation of Tensilely Strained Germanium-on-Insulator
- Acceptor-Like States in SiGe Alloy Related to Point Defects Induced by Si Ion Implantation
- Room-Temperature Electroluminescence from Ge Quantum Dots Embedded in Photonic Crystal Microcavities
- Annihilation of Acceptor–Hydrogen Pairs in Si Crystals Due to Electron Irradiation
- Structural Study of BF2 Ion Implantation and Post Annealing of BaSi2 Epitaxial Films
- Realization of Large-Domain Barium Disilicide Epitaxial Thin Film by Introduction of Miscut to Si(111) Substrate (Special Issue : Photovoltaic Science and Engineering)
- Molecular Beam Epitaxy of BaSi2 Films with Grain Size over 4 μm on Si(111)
- Large-Grain Polycrystalline Silicon Films Formed through Flash-Lamp-Induced Explosive Crystallization
- Epitaxy of Orthorhombic BaSi2 with Preferential In-Plane Crystal Orientation on Si(001): Effects of Vicinal Substrate and Annealing Temperature
- Room-Temperature Observation of Size Effects in Photoluminescence of Si_Ge_/Si Nanocolumns Prepared by Neutral Beam Etching
- Si Ion Implantation into Mg-Doped GaN for Fabrication of Reduced Surface Field Metal–Oxide–Semiconductor Field-Effect Transistors
- In-Plane Orientation and Polarity of ZnO Epitaxial Films on As-Polished Sapphire ($\alpha$-Al2O3) (0001) Substrates Grown by Metal Organic Chemical Vapor Deposition
- Epitaxial Growth and Polarity of ZnO Films on Sapphire (0001) Substrates by Low-Pressure Metal Organic Chemical Vapor Deposition
- Computational Investigation of Relationship between Shear Stress and Multicrystalline Structure in Silicon
- Strain State and Thermal Stability of Strained-Si-on-Insulator Substrates
- Thickness Dependence of Strain Field Distribution in SiGe Relaxed Buffer Layers
- New Structure of Polycrystalline Silicon Thin-Film Transistor with Germanium Layer in Source/Drain Regions for Low-Temperature Device Fabrication
- High Sensitive Imaging of Atomic Arrangement of Ge Clusters Buried in a Si Crystal by X-ray Fluorescence Holography
- High-Quality Polycrystalline Silicon Films with Minority Carrier Lifetimes over 5 μs Formed by Flash Lamp Annealing of Precursor Amorphous Silicon Films Prepared by Catalytic Chemical Vapor Deposition
- Structural and Optical Properties of ZnO Epitaxial Films Grown on Al2O3 ($11\bar{2}0$) Substrates by Metalorganic Chemical Vapor Deposition
- Realization of Bulk Multicrystalline Silicon with Controlled Grain Boundaries by Utilizing Spontaneous Modification of Grain Boundary Configuration
- High-Quality Crystalline Silicon Layer Grown by Liquid Phase Epitaxy Method at Low Growth Temperature
- Impact of Defect Density in Si Bulk Multicrystals on Gettering Effect of Impurities
- Successful Growth of InxGa1-xAs ($x>0.18$) Single Bulk Crystal Directly on GaAs Seed Crystal with Preferential Orientation
- High-Efficiency Concave and Conventional Solar Cell Integration System Using Focused Reflected Light
- Analysis of the Dark-Current Density in Solar Cells Based on Multicrystalline SiGe
- Relationship between Device Performance and Grain Boundary Structural Configuration in a Solar Cell Based on Multicrystalline SiGe
- Functional Enhancement of Metal–Semiconductor–Metal Infrared Photodetectors on Heteroepitaxial SiGe-on-Si Using the Anodic Oxidation/Passivation Method
- Strain-Field Evaluation of Strain-Relaxed Thin SiGe Layers Fabricated by Ion Implantation Method
- Fabrication of SiGe-on-Insulator through Thermal Diffusion of Ge on Si-on-Insulator Substrate
- Liquid Phase Epitaxial Growth of Si Layers on Si Thin Substrates from Si Pure Melts under Near-Equilibrium Conditions
- Mobility Enhancement in Strained Ge Heterostructures by Planarization of SiGe Buffer Layers Grown on Si Substrates
- Control of Grain Boundary Propagation in Mono-Like Si : Utilization of Functional Grain Boundaries