Analysis of the Dark-Current Density in Solar Cells Based on Multicrystalline SiGe

スポンサーリンク

概要

• 論文の詳細を見る

• We analyzed the dark-current density obtained from solar cells based on multicrystalline SiGe (mc-SiGe) using a modified two-diode model that includes two diodes with diode ideality factors of 1 and 2, shunt resistance, and several series resistances. The ratio of recombination area $r$, which corresponds to the domination of recombination current, is almost independent of the average Ge composition, while the shunt resistance $R_{\text{sh}}$ shows little change up to 5% and a drastic reduction at an average Ge composition of 10%. These results indicate that the deterioration of solar cell properties with an average Ge composition of 10% is mainly due to its lower shunt resistance, which is caused by the generation of defects. It can also be said that the quality of mc-SiGe is preserved at an average Ge composition of up to 5%. This strongly supports the suitability to high-efficient solar cells of mc-SiGe that has the proper average Ge composition due to its enhanced absorption coefficient and the resultant increase in short-circuit current density.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2005-11-15

著者

• Usami Noritaka

  Institute For Material Research Tohoku University

• Pan Wugen

  Institute For Materials Research (imr) Tohoku University

• Fujiwara Kozo

  Institute For Materials Research (imr) Tohoku University

• Ohdaira Keisuke

  Institute For Materials Research (imr) Tohoku University

• Usami Noritaka

  Institute for Materials Research (IMR), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

• Nakajima Kazuo

  Institute for Materials Research (IMR), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

• Nakajima Kazuo

  Institute for Materials Reseach, Tohoku University, 2-1-1 Katahira-cho, Aoba-ku, Sendai 980-8577, Japan

関連論文

• High-Efficiency Concave and Conventional Solar Cell Integration System Using Focused Reflected Light
• Analysis of the Dark-Current Density in Solar Cells Based on Multicrystalline SiGe
• Floating Zone Growth of Si Bicrystals Using Seed Crystals with Artificially Designed Grain Boundary Configuration
• Preparation of a TiO-2 Film Coated Si Device for Photo-Decomposition of Water by CVD Method Using Ti(OPr^i)_4
• Functional Enhancement of Metal-Semiconductor-Metal (MSM) Infrared Photodetectors on Heteroepitaxial SiGe-on-Si Using the Anodic Oxidation/Passivation Method
• High Sensitive Imaging of Atomic Arrangement of Ge Clusters Buried in a Si Crystal by X-ray Fluorescence Holography
• Hardness and Oxidation Resistance of Perovskite-type Solid Solution of the ScRh_3B-ScRh_3C System
• Crystal Growth and Properties of AlLiB_ : Magnetism
• REMn_2Si_2 (RE=Y, Tb, Dy, Ho) Single Crystals Grown from Lead Flux and Magnetic Properties : Magnetism
• Boron-Carbon Atomic Ratio Dependence on the Hardness and Oxidation Resistance of Solid Solutions of Perovskite-Type Borocarbide YRh_3B_xC_ (O ≦ x ≦ 1)
• R-Dependency of the Hardness Of Perovskite-Type RRh_3B Compounds (R = La, Gd, Lu and Sc) : Structure and Mechanical and Thermal Properties of Condensed Matter
• High-Temperature Solution Growth and Characterization of Chromium Disilicide
• Modification of Local Structure and Its Influence on Electrical Activity of Near (310) *5 Grain Boundary in Bulk Silicon
• Rectangular AlGaAs/AlAs Quantum Wires Using Spontaneous Vertical Quantum Wells
• The in Situ Growth of Lateral Confinement Enhanced Rectangular AlGaAs/AlAs Quantum Wires by Utilizing the Spontaneous Vertical Quantum Wells
• Introduction of Uniaxial Strain into Si/Ge Heterostructures by Selective Ion Implantation
• Development of Thin SiGe Relaxed Layers with High-Ge Composition by Ion Implantation Method and Application to Strained Ge Channels
• On Effects of Gate Bias on Hole Effective Mass and Mobility in Strained-Ge Channel Structures
• Strain-Field Evaluation of Strain-Relaxed Thin SiGe Layers Fabricated by Ion Implantation Method
• Optical Detection of Interdiffusion in Strained Si_Ge_x/Si Quantum Well Structures
• Photoluminescence of Si_Ge_x/Si Quantum Welts with Abrupt Interfaces Formed by Segregant-Assisted Growth
• Band-Edge Photoluminescence of SiGe/Strained-Si/SiGe Type-II Quantum Wells on Si(100)
• Luminescence from Strained Si_Ge_x/Si Quantum Wells Grown by Si Molecular Beam Epitaxy
• Photogeneration and Transport of Carriers in Strained Si_Ge_x/Si Quantum Well Structures
• Quantum Size Effect of Excitonic Band-Edge Luminescence in Strained Si_Ge_x/Si Single Quantum Well Structures Grown by Gas-Source Si Molecular Beam Epitaxy
• Band-Edge Luminescence of Strained Si_xGe_/Si Single Quantum Well Structures Grown on Si(111) by Si Molecular Beam Epitaxy
• Electroluminescence from Strained SiGe/Si Quantum Well Structures Grown by Solid Source Si Molecular Beam Epitaxy
• Structural Origin of a Cluster of Bright Spots in Reverse Bias Electroluminescence Image of Solar Cells Based on Si Multicrystals
• Liquid Phase Epitaxial Growth of Si Layers on Si Thin Substrates from Si Pure Melts under Near-Equilibrium Conditions
• On the Origin of Improved Conversion Efficiency of Solar Cells Based on SiGe with Compositional Distribution
• Successful Growth of In_x Ga_As (x>0.18) Single Bulk Crystal Directly on GaAs Seed Crystal with Preferential Orientation
• Relationship between Device Performance and Grain Boundary Structural Configuration in a Solar Cell Based on Multicrystalline SiGe
• Evidence of the Presence of Built-in Strain in Multicrystalline SiGe with Large Compositional Distribution
• Control of Macroscopic Absorption Coefficient of Multicrystalline SiGe by Microscopic Compositional Distribution : Semiconductors
• Growth of Si_xGe_(x〓0.15) Bulk Crystal with Uniform Composition Utilizing in situ Monitoring of the Crystal-solution Interface
• In Situ Measurement of Composition in High-Temperature Solutions by X-Ray Fluorescence Spectrometry
• Fabrication of SiGe-on-Insulator through Thermal Diffusion of Ge on Si-on-Insulator Substrate
• On the Controlling Mechanism of Preferential Orientation of Polycrystalline-Silicon Thin Films Grown by Aluminum-Induced Crystallization
• Toward high-efficiency thin-film solar cells using semiconducting BaSi_2(Session 1A : Emerging Device Technology 1)
• Toward high-efficiency thin-film solar cells using semiconducting BaSi_2(Session 1A : Emerging Device Technology 1)
• Photoresponse Properties of Polycrystalline BaSi_2 Films Grown on SiO_2 Substrates Using (111)-Oriented Si Layers by an Aluminum-Induced Crystallization Method
• Magnetic Damping of the Temperature-Driven Convection in NaCl Aqueous Solution Using a Static and Homogeneous Field of 10 T
• Interplay of Excitonic Radiative Recombination and Ionization in Photocurrent Spectra of Thick Barrier GaAs/AlAs Multiple Quantum Wells
• Influence of Type-I to Type-II Transition by an Applied Electric Field on Photoluminescence and Carrier Transport in GaAs/AlAs Type-I Short-Period Superlattices
• Hydrogen-Absorption Effect on YBa_2Cu_3O_x
• Miniband Edge Optical Transitions in Photocurrent Spectra of GaAs/AlAs Superlattices
• Transmission Self-Electro-Optic Effect Devices Based on Wannier-Stark Localization in a GaAs/AlAs Superlattice
• Analysis of Stress in Laser-Crystallized Polysilicon Thin Films by Raman Scattering Spectroscopy
• Fabrication of n^+-BaSi_2/p^+-Si Tunnel Junction on Si(111) Surface by Molecular Beam Epitaxy for Photovoltaic Applications
• Realization of a High-Performance Point-Focusing Monochromator for X-ray Studies
• Vanishing of Negative Differential Resistance Region Due to Electric Field Screening in Wannier-Stark Localization Type Self-Electro-Optic Effect Devices
• Valence Band Modulation in InGaAs/InAlAs Superlattices with Tensilely Strained Wells Grown on InGaAs Quasi-Substrate on GaAs
• Sex differences in the chemical induction of micronuclei in the rat
• Production of WTC.ZI-zi Rat Congenic Strain and Its Pathological and Genetic Analyses
• Growth of Compositionally Graded SiGe Bulk Crystal and Its Application As Substrate with Lateral Variation in Ge Content
• In situ Observation of Polycrystalline Silicon Thin Films Grown Using Aluminum-Doped Zinc Oxide on Glass Substrate by the Aluminum-Induced Crystallization
• 19aD07 The first direct observation of the adsorption process of individual impurity molecules on a protein crystal surface by optical microscopy(NCCG-35)
• Acceptorlike Behavior of Defects in SiGe Alloys Grown by Molecular Beam Epitaxy
• Line Width Dependence of Anisotropic Strain State in SiGe Films Induced by Selective Ion Implantation
• Preparation of an Ultraclean and Atomically Controlled Hydrogen-Terminated Si(111)-($1{\times} 1$) Surface Revealed by High Resolution Electron Energy Loss Spectroscopy, Atomic Force Microscopy, and Scanning Tunneling Microscopy: Aqueous NH4F Etching Proc
• Effect of Solid-Phase-Epitaxy Si Layers on Suppression of Sb Diffusion from Sb-Doped n-BaSi/p-Si Tunnel Junction to Undoped BaSi Overlayers (Special Issue : Solid State Devices and Materials (2))
• Effect of Phase Purity on Dislocation Density of Pressurized-Reactor Metalorganic Vapor Phase Epitaxy Grown InN (Special Issue : Solid State Devices and Materials (2))
• Search for Perovskite-Type New Boride in the Sc–Ni–B System
• High-Temperature Solution Growth and Characterization of Chromium Disilicide
• Generation and Wavelength Control of Resonant Luminescence from Silicon Photonic Crystal Microcavities with Ge Dots
• Room-Temperature Electroluminescence from Ge Quantum Dots Embedded in Photonic Crystal Microcavities
• Annihilation of Acceptor–Hydrogen Pairs in Si Crystals Due to Electron Irradiation
• Structural Study of BF2 Ion Implantation and Post Annealing of BaSi2 Epitaxial Films
• Realization of Large-Domain Barium Disilicide Epitaxial Thin Film by Introduction of Miscut to Si(111) Substrate (Special Issue : Photovoltaic Science and Engineering)
• Molecular Beam Epitaxy of BaSi2 Films with Grain Size over 4 μm on Si(111)
• Fabrication of Quasi-Phase-Matching Structure during Paraelectric Borate Crystal Growth
• Large-Grain Polycrystalline Silicon Films Formed through Flash-Lamp-Induced Explosive Crystallization
• Epitaxy of Orthorhombic BaSi2 with Preferential In-Plane Crystal Orientation on Si(001): Effects of Vicinal Substrate and Annealing Temperature
• In-Plane Orientation and Polarity of ZnO Epitaxial Films on As-Polished Sapphire ($\alpha$-Al2O3) (0001) Substrates Grown by Metal Organic Chemical Vapor Deposition
• Epitaxial Growth and Polarity of ZnO Films on Sapphire (0001) Substrates by Low-Pressure Metal Organic Chemical Vapor Deposition
• Computational Investigation of Relationship between Shear Stress and Multicrystalline Structure in Silicon
• Thickness Dependence of Strain Field Distribution in SiGe Relaxed Buffer Layers
• High Sensitive Imaging of Atomic Arrangement of Ge Clusters Buried in a Si Crystal by X-ray Fluorescence Holography
• High-Quality Polycrystalline Silicon Films with Minority Carrier Lifetimes over 5 μs Formed by Flash Lamp Annealing of Precursor Amorphous Silicon Films Prepared by Catalytic Chemical Vapor Deposition
• Structural and Optical Properties of ZnO Epitaxial Films Grown on Al2O3 ($11\bar{2}0$) Substrates by Metalorganic Chemical Vapor Deposition
• Realization of Bulk Multicrystalline Silicon with Controlled Grain Boundaries by Utilizing Spontaneous Modification of Grain Boundary Configuration
• High-Quality Crystalline Silicon Layer Grown by Liquid Phase Epitaxy Method at Low Growth Temperature
• Impact of Defect Density in Si Bulk Multicrystals on Gettering Effect of Impurities
• Successful Growth of InxGa1-xAs ($x>0.18$) Single Bulk Crystal Directly on GaAs Seed Crystal with Preferential Orientation
• High-Efficiency Concave and Conventional Solar Cell Integration System Using Focused Reflected Light
• Analysis of the Dark-Current Density in Solar Cells Based on Multicrystalline SiGe
• Relationship between Device Performance and Grain Boundary Structural Configuration in a Solar Cell Based on Multicrystalline SiGe
• Functional Enhancement of Metal–Semiconductor–Metal Infrared Photodetectors on Heteroepitaxial SiGe-on-Si Using the Anodic Oxidation/Passivation Method
• Strain-Field Evaluation of Strain-Relaxed Thin SiGe Layers Fabricated by Ion Implantation Method
• Fabrication of SiGe-on-Insulator through Thermal Diffusion of Ge on Si-on-Insulator Substrate
• Liquid Phase Epitaxial Growth of Si Layers on Si Thin Substrates from Si Pure Melts under Near-Equilibrium Conditions
• Improvement of photovoltaic characteristics of B-doped Czochralski-Silicon by Ge codoping
• Improvement of photovoltaic characteristics of B-doped Czochralski-Silicon by Ge codoping
• Improvement of photovoltaic characteristics of B-doped Czochralski-Silicon by Ge codoping
• Fabrication of Quasi-Phase-Matching Structure during Paraelectric Borate Crystal Growth
• Control of Grain Boundary Propagation in Mono-Like Si : Utilization of Functional Grain Boundaries

もっと見る 閉じる

スポンサーリンク