High-Efficiency Concave and Conventional Solar Cell Integration System Using Focused Reflected Light
スポンサーリンク
概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
著者
-
Ohdaira Keisuke
Japan Advanced Inst. Sci. And Technol. (jaist) Ishikawa Jpn
-
Ohdaira Keisuke
Japan Advanced Inst. Of Sci. And Technol. (jaist) Asahidai Nomi-shi Ishikawa-ken 923-1292 Jpn
-
Fujiwara Kozo
Institute For Materials Research (imr) Tohoku University
-
Fujiwara K
Institute For Materials Research (imr) Tohoku University
関連論文
- Selection of material for the back electrodes of thin-film solar cells using polycrystalline silicon films formed by flash lamp annealing (Special issue: Solid state devices and materials)
- Formation of Several-Micrometer-Thick Polycrystalline Silicon Films on Soda Lime Glass by Flash Lamp Annealing
- Study on stability of amorphous silicon thin-film transistors prepared by catalytic chemical vapor deposition
- Formation of Highly Uniform Micrometer-Order-Thick Polycrystalline Silicon Films by Flash Lamp Annealing of Amorphous Silicon on Glass Substrate
- High-Quality Polycrystalline Silicon Films with Minority Carrier Lifetimes over 5 μs Formed by Flash Lamp Annealing of Precursor Amorphous Silicon Films Prepared by Catalytic Chemical Vapor Deposition
- High-Efficiency Concave and Conventional Solar Cell Integration System Using Focused Reflected Light
- Analysis of the Dark-Current Density in Solar Cells Based on Multicrystalline SiGe
- Floating Zone Growth of Si Bicrystals Using Seed Crystals with Artificially Designed Grain Boundary Configuration
- High-Temperature Solution Growth and Characterization of Chromium Disilicide
- Drastic Improvement of Minority Carrier Lifetimes Observed in Hydrogen-Passivated Flash-Lamp-Crystallized Polycrystalline Silicon Films
- Modification of Local Structure and Its Influence on Electrical Activity of Near (310) *5 Grain Boundary in Bulk Silicon
- Structural Origin of a Cluster of Bright Spots in Reverse Bias Electroluminescence Image of Solar Cells Based on Si Multicrystals
- Liquid Phase Epitaxial Growth of Si Layers on Si Thin Substrates from Si Pure Melts under Near-Equilibrium Conditions
- On the Origin of Improved Conversion Efficiency of Solar Cells Based on SiGe with Compositional Distribution
- Successful Growth of In_x Ga_As (x>0.18) Single Bulk Crystal Directly on GaAs Seed Crystal with Preferential Orientation
- Relationship between Device Performance and Grain Boundary Structural Configuration in a Solar Cell Based on Multicrystalline SiGe
- Evidence of the Presence of Built-in Strain in Multicrystalline SiGe with Large Compositional Distribution
- Control of Macroscopic Absorption Coefficient of Multicrystalline SiGe by Microscopic Compositional Distribution : Semiconductors
- Fabrication of SiGe-on-Insulator through Thermal Diffusion of Ge on Si-on-Insulator Substrate
- Effect of Aluminium Composition on the Luminescence of AlAs/Al_xGa_As Multiple Quantum Wells
- Improved Heterointerface and Vertical Transport in GaAs Single Quantum Well Confined by All-Binary GaAs/AlAs Short-Period-Superlattices
- Novel Dual Wavelength Electro-Optical Bistability in InGaAs/AlGaAs Multiple Quantum Wells
- Dual Wavelength Electro-Optical Bistability in an Asymmetric Self-Electro-Optic Effect Device
- Carrier-Temperature and Wavelength-Switching in GaAs Single-Quantum-Well Baser Diode
- On the Origin of Oval Defect with Nucleus on Epilayers Grown by Molecular Beam Epitaxy
- Interplay of Excitonic Radiative Recombination and Ionization in Photocurrent Spectra of Thick Barrier GaAs/AlAs Multiple Quantum Wells
- Influence of Type-I to Type-II Transition by an Applied Electric Field on Photoluminescence and Carrier Transport in GaAs/AlAs Type-I Short-Period Superlattices
- Vanishing of Negative Differential Resistance Region due to Electric Field Screening in Wannier-Stark Localization Type Self-Electro-Optic Effect Devices
- Valence Band Modulation in InGaAs/InAlAs Superlattices with Tensilely Strained Wells Grown on InGaAs Quasi-Substrate on GaAs
- Hydrogen-Absorption Effect on YBa_2Cu_3O_x
- Miniband Edge Optical Transitions in Photocurrent Spectra of GaAs/AlAs Superlattices
- Transmission Self-Electro-Optic Effect Devices Based on Wannier-Stark Localization in a GaAs/AlAs Superlattice
- Electrical and Magnetic Properties of the High-T_c Superconductors (Y_M_x)Ba_2Cu_3O_y and Y(Ba_M_x)_2Cu_3O_y (M=Mg, Ca, Sr, Ba)
- Realization of a High-Performance Point-Focusing Monochromator for X-ray Studies
- Vanishing of Negative Differential Resistance Region Due to Electric Field Screening in Wannier-Stark Localization Type Self-Electro-Optic Effect Devices
- Valence Band Modulation in InGaAs/InAlAs Superlattices with Tensilely Strained Wells Grown on InGaAs Quasi-Substrate on GaAs
- In-Plane Photocurrent Spectroscopy of Undoped GaAs/AlAs Quantum Well Heterostructures : Surfaces, Interfaces and Films
- Microstructure of Polycrystalline Silicon Films Formed through Explosive Crystallization Induced by Flash Lamp Annealing
- Electro-Optical Bistability and Multistability in GaAs/AlAs Superlattices with Different Miniband Widths
- Room Temperature Stark-Ladder Transitions in GaAs/AlAs Superlattices with Different Miniband Widths
- Selection of Material for the Back Electrodes of Thin-Film Solar Cells Using Polycrystalline Silicon Films Formed by Flash Lamp Annealing
- Formation of Several-Micrometer-Thick Polycrystalline Silicon Films on Soda Lime Glass by Flash Lamp Annealing
- Formation of Highly Uniform Micrometer-Order-Thick Polycrystalline Silicon Films by Flash Lamp Annealing of Amorphous Silicon on Glass Substrate
- High-Temperature Solution Growth and Characterization of Chromium Disilicide
- Fabrication of Quasi-Phase-Matching Structure during Paraelectric Borate Crystal Growth
- Large-Grain Polycrystalline Silicon Films Formed through Flash-Lamp-Induced Explosive Crystallization
- Low Temperature Phosphorus Doping in Silicon Using Catalytically Generated Radicals
- High-Quality Polycrystalline Silicon Films with Minority Carrier Lifetimes over 5 μs Formed by Flash Lamp Annealing of Precursor Amorphous Silicon Films Prepared by Catalytic Chemical Vapor Deposition
- Realization of Bulk Multicrystalline Silicon with Controlled Grain Boundaries by Utilizing Spontaneous Modification of Grain Boundary Configuration
- High-Quality Crystalline Silicon Layer Grown by Liquid Phase Epitaxy Method at Low Growth Temperature
- Impact of Defect Density in Si Bulk Multicrystals on Gettering Effect of Impurities
- Successful Growth of InxGa1-xAs ($x>0.18$) Single Bulk Crystal Directly on GaAs Seed Crystal with Preferential Orientation
- Defect Termination of Flash-Lamp-Crystallized Large-Grain Polycrystalline Silicon Films by High-Pressure Water Vapor Annealing
- High-Efficiency Concave and Conventional Solar Cell Integration System Using Focused Reflected Light
- Analysis of the Dark-Current Density in Solar Cells Based on Multicrystalline SiGe
- Relationship between Device Performance and Grain Boundary Structural Configuration in a Solar Cell Based on Multicrystalline SiGe
- Fabrication of SiGe-on-Insulator through Thermal Diffusion of Ge on Si-on-Insulator Substrate
- Liquid Phase Epitaxial Growth of Si Layers on Si Thin Substrates from Si Pure Melts under Near-Equilibrium Conditions
- Improvement of photovoltaic characteristics of B-doped Czochralski-Silicon by Ge codoping
- Improvement of photovoltaic characteristics of B-doped Czochralski-Silicon by Ge codoping
- Improvement of photovoltaic characteristics of B-doped Czochralski-Silicon by Ge codoping
- Fabrication of Quasi-Phase-Matching Structure during Paraelectric Borate Crystal Growth