Microstructure of Polycrystalline Silicon Films Formed through Explosive Crystallization Induced by Flash Lamp Annealing

スポンサーリンク

概要

• 論文の詳細を見る

• We perform transmission electron microscopy investigation of the microstructures of polycrystalline silicon (poly-Si) films formed through explosive crystallization (EC) induced by flash lamp annealing (FLA) of precursor amorphous silicon (a-Si) films. Two characteristic regions, formed periodically as a result of EC, show different microstructures: one consists of randomly oriented, densely packed fine grains of approximately 10 nm in size, whereas the other has relatively large (${>}100$ nm), stretched grains, probably formed through liquid-phase epitaxy onto solid-phase-nucleated grains. Little a-Si tissue surrounding grains can be observed in the lattice images of flash-lamp-crystallized poly-Si films, which would be favorable for the rapid transport of photocarriers.

• 2011-04-25

著者

• Matsumura Hideki

  Japan Advanced Inst. Sci. And Technol. (jaist) Ishikawa Jpn

• Ohdaira Keisuke

  Japan Advanced Inst. Of Sci. And Technol. (jaist) Asahidai Nomi-shi Ishikawa-ken 923-1292 Jpn

• Ishii Shohei

  Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan

• Tomura Naohito

  Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan

関連論文

• Selection of material for the back electrodes of thin-film solar cells using polycrystalline silicon films formed by flash lamp annealing (Special issue: Solid state devices and materials)
• Formation of Several-Micrometer-Thick Polycrystalline Silicon Films on Soda Lime Glass by Flash Lamp Annealing
• Study on stability of amorphous silicon thin-film transistors prepared by catalytic chemical vapor deposition
• Formation of Highly Uniform Micrometer-Order-Thick Polycrystalline Silicon Films by Flash Lamp Annealing of Amorphous Silicon on Glass Substrate
• High-Quality Polycrystalline Silicon Films with Minority Carrier Lifetimes over 5 μs Formed by Flash Lamp Annealing of Precursor Amorphous Silicon Films Prepared by Catalytic Chemical Vapor Deposition
• High-Efficiency Concave and Conventional Solar Cell Integration System Using Focused Reflected Light
• Analysis of the Dark-Current Density in Solar Cells Based on Multicrystalline SiGe
• Floating Zone Growth of Si Bicrystals Using Seed Crystals with Artificially Designed Grain Boundary Configuration
• Theoretical Study for Drastic Improvement of Solar Cell Efficiency
• Catalytic CVD processes of oxidizing species and the prevention of　oxidization of heated tungsten filaments by H₂
• Air-Stable p-Type and n-Type Carbon Nanotube Field-Effect Transistors with Top-Gate Structure on SiN_x Passivation Films Formed by Catalytic Chemical Vapor Deposition
• Preparation of Low-Stress SiN_x Films by Catalytic Chemical Vapor Deposition at Low Temperatures
• Improvement of Deposition Rate by Sandblasting of Tungsten Wire in Catalytic Chemical Vapor Deposition
• Moisture-Resistive Properties of SiN_x Films Prepared by Catalytic Chemical Vapor Deposition below 100℃ for Flexible Organic Light-Emitting Diode Displays
• Quantification of Gas-Phase H-Atom Number Density by Tungsten Phosphate Glass
• Effect of Atomic Hydrogen on Preparation of Highly Moisture-Resistive SiN_x Films at Low Substrate Temperatures
• Highly Moisture-Resistive SiN_x Films Prepared by Catalytic Chemical Vapor Deposition
• Low-Resistivity Phosphorus-Doped Polycrystalline Silicon Thin Films Formed by Catalytic Chemical Vapor Deposition and Successive Rapid Thermal Annealing
• Catalytic Chemical Sputtering: A Novel Method for Obtaining Large-Grain Polycrystalline Silicon : Surfaces, Interfaces, and Films
• Control of Polycrystalline Silicon Structure by the Two-Step Deposition Method
• Annealing Effect of Pb(Zr, Ti)O_3 Ferroelectric Capacitor in Active Ammonia Gas Cracked by Catalytic Chemical Vapor Deposition System
• Role of Hydrogen in Polycrystalline Si by Excimer Laser Annealing
• Drastic Improvement of Minority Carrier Lifetimes Observed in Hydrogen-Passivated Flash-Lamp-Crystallized Polycrystalline Silicon Films
• Optical Absorption Properties of Indium-Doped Thin Crystalline Silicon Films
• Effect of Hydrogen on Secondary Grain Growth of Polycrystalline Silicon Films by Excimer Laser Annealing in Low-Temperature Process
• Effective Interaction for the Jastrow Model Wave Function with the Transcorrelated Method(Nuclear Physics)
• Hall Mobility of Low-Temperature-Deposited Polysilicon Films by Catalytic Chemical Vapor Deposition Method
• Microstructure of Polycrystalline Silicon Films Formed through Explosive Crystallization Induced by Flash Lamp Annealing
• Radical Species Formed by the Catalytic Decomposition of NH3 on Heated W Surfaces
• Effects of High Nitrogen Pressure and Thermal Treatment on Adhesion to Amorphous Silicon/Silicon Nitride/Polyethersulfone Substrate during Excimer Laser Annealing
• Coating techniques of metal chambers for remote catalytic chemical vapor deposition applications
• Selection of Material for the Back Electrodes of Thin-Film Solar Cells Using Polycrystalline Silicon Films Formed by Flash Lamp Annealing
• Formation of Several-Micrometer-Thick Polycrystalline Silicon Films on Soda Lime Glass by Flash Lamp Annealing
• Distribution of Phosphorus Atoms and Carrier Concentrations in Single-Crystal Silicon Doped by Catalytically Generated Phosphorous Radicals
• Formation of Highly Uniform Micrometer-Order-Thick Polycrystalline Silicon Films by Flash Lamp Annealing of Amorphous Silicon on Glass Substrate
• Improvement of Deposition Rate by Sandblasting of Tungsten Wire in Catalytic Chemical Vapor Deposition
• Effect of Radical-Doped n+ Back Surface Field Layers on the Effective Minority Carrier Lifetimes of Crystalline Silicon with Amorphous Silicon Passivation Layers Deposited by Catalytic Chemical Vapor Deposition
• Large-Grain Polycrystalline Silicon Films Formed through Flash-Lamp-Induced Explosive Crystallization
• Low Temperature Phosphorus Doping in Silicon Using Catalytically Generated Radicals
• Preparation of Low-Stress SiNx Films by Catalytic Chemical Vapor Deposition at Low Temperatures
• High-Quality Polycrystalline Silicon Films with Minority Carrier Lifetimes over 5 μs Formed by Flash Lamp Annealing of Precursor Amorphous Silicon Films Prepared by Catalytic Chemical Vapor Deposition
• Moisture-Resistive Properties of SiNx Films Prepared by Catalytic Chemical Vapor Deposition below 100°C for Flexible Organic Light-Emitting Diode Displays
• Defect Termination of Flash-Lamp-Crystallized Large-Grain Polycrystalline Silicon Films by High-Pressure Water Vapor Annealing

もっと見る 閉じる

スポンサーリンク