Role of Hydrogen in Polycrystalline Si by Excimer Laser Annealing
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概要
- 論文の詳細を見る
The role of hydrogen in the Si film during excimer laser annealing (ELA) has been successfully studied by using a novel sample structure, which is stacked by a-Si film and SiN film. Hydrogen contents in the Si films during ELA are changed by preparing samples with hydrogen content of 2.3-8.2 at.% in the SiN films with a use of catalytic (Cat)-CVD method. For the low concentration of hydrogens in the Si film, the grain size increases by decreasing hydrogen concentration in the Si film, and the internal stress of the film decreases as increasing the shot number. For the high concentration of hydrogens in the Si film, hydrogen burst was observed at 500 mJ/cm^2 and the dependence of the internal stress on the shot number becomes weak even at 318 mJ/cm^2. These phenomena can be understood basically using the secondary grain growth mechanism, which we have proposed.
- 社団法人電子情報通信学会の論文
- 2005-02-01
著者
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Hamada H
National Institute Of Fitness And Sports In Kanoya
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Hamada H
Materials And Devices Development Center Bu Sanyo Electric Co. Ltd.
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MATSUO Naoto
Department of Materials Science & Chemistry, University of Hyogo
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KAWAMOTO Naoya
Department of Electrical and Electronic Engineering, Yamaguchi University
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Miyoshi Tadaki
Department Of Electrical And Electronic Engineering Yamaguchi University
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Matsumura Hideki
Japan Advanced Inst. Sci. And Technol. (jaist) Ishikawa Jpn
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MASUDA Atsushi
School of Materials Science, Japan Advanced Institute of Science and Technology
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MATSUMURA Hideki
School of Materials Science, Japan Advanced Institute of Science and Technology
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Kawamoto N
Department Of Electrical And Electronic Engineering Yamaguchi University
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Miyoshi Tadaki
Department Of Electrical And Electronic Engineering
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KITAMON Yoshitaka
Department of Electrical and Electronic Engineering, Yamaguchi University
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HARADA Yasunori
Department of Material Science and Solid State Physics, Graduate School of Engineering, University o
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HAMADA Hiroki
Materials and Devices Development Center BU, SANYO Electric Co., Ltd.
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Matsumura Hideki
Japan Advanced Institute Of Science And Technology (jaist)
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Hamada Hiroki
Materials And Devices Development Center Bu Sanyo Electric Co. Ltd.
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Mochizuki Takayasu
Laboratory Of Advanced Science And Technology For Industry (lasti) University Of Hyogo
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Kawamoto Naoya
Department Of Electrical And Electronic Engineering Yamaguchi University
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Matsumura Hideki
School Of Materials Science Japan Advanced Institute Of Science And Technology (jaist)
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Matsumura Hideki
School Of Materials Science Jaist (japan Advanced Institute Of Science And Technology)
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Matsuo N
Department Of Materials Science & Chemistry University Of Hyogo
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Matsuo Naoto
Univ. Hyogo Hyogo
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Matsuo Naoto
Department Of Electrical And Electronic Engineering Yamaguchi University
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Miyoshi T
Department Of Electrical And Electronic Engineering Yamaguchi University
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Masuda Atsushi
School Of Materials Science Japan Advanced Institute Of Science And Technology
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Harada Yasunori
Department Of Material Science And Solid State Physics Graduate School Of Engineering University Of
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Kitagawa Y
Department Of Electrical And Electronic Engineering Yamaguchi University
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Matsumura Hideki
School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST)
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Masuda Atsushi
School of Material Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan
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Matsuo Naoto
Department of Electrical & Electronic Engineering, Yamaguchi University
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Miyoshi Tadaki
Department of Electrical & Electronic Engineering, Yamaguchi University
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Matsumura Hideki
School of Material Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan
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Kawamoto Naoya
Department of Electrical & Electronic Engineering, Yamaguchi University, 2557 Tokiwadai, Ube 755-8611, Japan
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