Formation of Highly Uniform Micrometer-Order-Thick Polycrystalline Silicon Films by Flash Lamp Annealing of Amorphous Silicon on Glass Substrate

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概要

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• Polycrystalline silicon (poly-Si) films as thick as 4.5 μm are prepared by flash lamp annealing (FLA) of amorphous silicon (a-Si) films without thermal damage onto glass substrates. The a-Si films are deposited by catalytic chemical vapor deposition (Cat-CVD) at 320 ℃. Since the hydrogen content in Cat-CVD a-Si films is as low as 3 at. %, they are easily converted to poly-Si without any dehydrogenation treatment. Chromium (Cr) films 60 nm thick are coated onto glass substrates to achieve high area uniformity of poly-Si formation. Secondary ion mass spectroscopy (SIMS) reveals that no diffused Cr atoms are detected inside poly-Si films and that crystallization is not the well-known metal-induced crystallization. Raman spectra from the poly-Si films show high crystallinity close to 1, and the photoluminescence (PL) spectrum demonstrates clear band-to-band transition, indicating the formation of device-quality poly-Si by FLA of Cat-CVD a-Si.

• 2007-12-15

著者

• Matsumura Hideki

  Japan Advanced Inst. Sci. And Technol. (jaist) Ishikawa Jpn

• Ohdaira Keisuke

  Japan Advanced Inst. Of Sci. And Technol. (jaist) Asahidai Nomi-shi Ishikawa-ken 923-1292 Jpn

• Fujiwara Tomoko

  Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan

• Endo Yohei

  Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan

• Nishizaki Shogo

  Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan

• Matsumura Hideki

  Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan

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