Nishizaki Shogo | Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan
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概要
- Nishizaki Shogoの詳細を見る
- 同名の論文著者
- Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japanの論文著者
関連著者
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Matsumura Hideki
Japan Advanced Inst. Sci. And Technol. (jaist) Ishikawa Jpn
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Ohdaira Keisuke
Japan Advanced Inst. Of Sci. And Technol. (jaist) Asahidai Nomi-shi Ishikawa-ken 923-1292 Jpn
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Fujiwara Tomoko
Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan
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Endo Yohei
Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan
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Nishizaki Shogo
Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan
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Usami Noritaka
Institute For Material Research Tohoku University
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Nakajima Kazuo
Institute For Materials Research (imr) Tohoku University
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Usami Noritaka
Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Ohdaira Keisuke
Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan
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Nakajima Kazuo
Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Nakajima Kazuo
Institute for Materials Reseach, Tohoku University, 2-1-1 Katahira-cho, Aoba-ku, Sendai 980-8577, Japan
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Matsumura Hideki
Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan
著作論文
- Formation of Several-Micrometer-Thick Polycrystalline Silicon Films on Soda Lime Glass by Flash Lamp Annealing
- Formation of Highly Uniform Micrometer-Order-Thick Polycrystalline Silicon Films by Flash Lamp Annealing of Amorphous Silicon on Glass Substrate
- High-Quality Polycrystalline Silicon Films with Minority Carrier Lifetimes over 5 μs Formed by Flash Lamp Annealing of Precursor Amorphous Silicon Films Prepared by Catalytic Chemical Vapor Deposition