Moisture-Resistive Properties of SiNx Films Prepared by Catalytic Chemical Vapor Deposition below 100°C for Flexible Organic Light-Emitting Diode Displays
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概要
- 論文の詳細を見る
Silicon nitride (SiNx) films were deposited on Si and polycarbonate (PC) substrates at temperatures below 100°C by a catalytic chemical vapor deposition (Cat-CVD) method. By adding H2 to source gases, SiH4 and NH3, it was possible to prevent the deterioration of film qualities in low-temperature deposition processes. H atoms produced from H2 are effective for increasing the film densities and improving passivation properties. The water vapor transmission rate of SiNx films on PC substrates deposited at 80°C was lower than 0.3 g/m2day; the detection limit for a cup method. It is concluded that the Cat-CVD method with H2 dilution is a promising technique for preparing highly moisture-resistive SiNx films at low temperatures.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-04-15
著者
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Matsumura Hideki
Japan Advanced Inst. Sci. And Technol. (jaist) Ishikawa Jpn
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MASUDA Atsushi
Japan Advanced Institute of Science and Technology
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TAKANO Masahiro
Industrial Research Institute of Ishikawa (IRII)
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NIKI Toshikazu
Japan Science and Technology Agency (JST)
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HEYA Akira
Industrial Research Institute of Ishikawa (IRII)
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UMEMOTO Hironobu
Japan Advanced Institute of Science and Technology (JAIST)
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IZUMI Akira
Japan Advanced Institute of Science and Technology (JAIST)
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Minamikawa Toshiharu
Industrial Research Institute Of Ishikawa
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Ikari Tokuo
Kuraray Co. Ltd.
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Muroi Susumu
Ishikawa Seisakusho Ltd.
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Yonezawa Yasuto
Industrial Research Institute Of Ishikawa
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Minami Shigehira
Ishikawa Seisakusho Ltd.
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Izumi Akira
Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan
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Ikari Tokuo
Kuraray Co., Ltd., 41 Miyukigaoka, Tsukuba, Ibaraki 305-0841, Japan
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Takano Masahiro
Industrial Research Institute of Ishikawa
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