Relationship between Photodarkening and Light-Induced ESR in Amorphous Ge-S Films Alloyed with Lead
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概要
- 論文の詳細を見る
It had been reported that lead alloying causes the disappearance of PD in Ge-S films. However, it was confirmed that LESR continues to exist in spite of the disappearance of the PD. For Ge-S films without lead, the LESR was observed by irradiation, the intensity of which is not so strong as that giving rise to the PD. It also turned out that the density of defects, including neutral and charged ones at room temperature, remains constant after strong irradiation at low temperature. From these results, It has become apparent that in Ge-S system in the PD does not originate from bond-breaking.
- 社団法人応用物理学会の論文
- 1991-06-15
著者
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MASUDA Atsushi
Japan Advanced Institute of Science and Technology
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SHIMIZU Tatsuo
Department of Electrical and Computer Engineering, Faculty of Engineering, Kanazawa University
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Kumeda M
Kanazawa Univ. Kanazawa Jpn
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Kumeda Minoru
Department Of Electrical And Computer Engineering Faculty Of Engineering Kanazawa University
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Masuda A
Japan Advanced Institute Of Science And Technology
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Shimizu T
Chiba Univ. Chiba Jpn
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Masuda Atsushi
Department Of Neurosurgery Shimizu Hospital
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Shimizu Tatsuo
Department Of Applied Physics University Of Tokyo
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Masuda Atsushi
Department Of Neurosurgery Eisyokai Yoshida Hospital
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Masuda Atsushi
Department of Electrical and Computer Engineering, Faculty of Engineering,
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Kumeda Minoru
Department of Electric and Electronic Engineering. Kanazawa University
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KUMEDA Minoru
Department of Electronics Faculty of Technology, Kanazawa University
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