A Model for the Staebler-Wronski Effect Based on Charged Impurities

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概要

• 論文の詳細を見る

• We propose a model for photo-induced changes for Si-based amorphous semiconductors, in which the distance between the impurity atom and the Si atom changes according to charge state.

• 社団法人応用物理学会の論文
• 1985-04-20

著者

• SHIMIZU Tatsuo

  Department of Electrical and Computer Engineering, Faculty of Engineering, Kanazawa University

• KUMEDA Minoru

  Department of Electronics, Faculty of Technology, Kanazawa University

• Ishii N

  Central Research Laboratory Tokyo Electron Ltd.

• Ishii Nobuo

  Corporate R&d Central Research Laboratory Tokyo Electron Ltd.

• ISHII Nobuhiko

  Department o Electrical Engineertig, Fukui Institute of Technology

• Kumeda M

  Kanazawa Univ. Kanazawa Jpn

• Kumeda Minoru

  Department Of Electrical And Computer Engineering Faculty Of Engineering Kanazawa University

• Shimizu T

  Chiba Univ. Chiba Jpn

• Shimizu Tatsuo

  Department Of Applied Physics University Of Tokyo

• Kumeda Minoru

  Department of Electric and Electronic Engineering. Kanazawa University

関連論文

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