Hydrogen Evolution from Amorphous Si-N Films

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概要

• 論文の詳細を見る

• Hydrogen evolution experiments were carried out for a-Si_<1-x>N_x:H films prepared by glow discharge decomposition. The H content increases with increasing N content in the range of <0.4, accompanying a large change in the oscillator strength for Si-H IR wagging mode absorption. The ratio of the content of hydrogen evolved at low temperature to the content of hydrogen evolved at high temperature increases with the N content, suggesting that the structure becomesvoid-rich.

• 社団法人応用物理学会の論文
• 1986-09-20

著者

• KOBAYASHI Isao

  Department of Laboratory Medicine and Clinical Laboratory Center, Gunma University School of Medicin

• MORIMOTO Akiharu

  Department of Electrical and Computer Engineering, Faculty of Engineering, Kanazawa University

• SHIMIZU Tatsuo

  Department of Electrical and Computer Engineering, Faculty of Engineering, Kanazawa University

• Kumeda M

  Kanazawa Univ. Kanazawa Jpn

• Kumeda Minoru

  Department Of Electrical And Computer Engineering Faculty Of Engineering Kanazawa University

• Shimizu T

  Chiba Univ. Chiba Jpn

• Moto Akihiro

  The Authors Are With The Research Center For Superconductor Photonics Osaka University

• Kobayashi Isao

  Department Of Electronics Faculty Of Technology Kanazawa University

• Shimizu Tatsuo

  Department Of Applied Physics University Of Tokyo

• KOBAYASHI Isao

  Department of Clinical Laboratory Medicine, Gunma University Graduate School of Medicine

• Morimoto Akiharu

  Department of Electrical and Computer Engineering, Faculty of Engineering,

• Kumeda Minoru

  Department of Electric and Electronic Engineering. Kanazawa University

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