Annealing Studies on Hydrogenated Amorphous Silicon-Tin Films
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概要
- 論文の詳細を見る
Hydrogenated amorphous Si-Sn (a-Si_<1-x>Sn_x:H) films were prepared by radio-frequency sputtering of the planarmagnetron type, and optical absorption, infrared absorption, Raman scattering, electron spin resonance and conductivity measurements were carried out on these films. Annealing experiments revealed that the a-Si_<1-x>Sn_x:H films had a low crystallization temperature, a low evolution temperature of H atoms and a low degradation temperature for the photoconductivity, compared with a-Si:H films. The incorporation of N into these films was found to improve the thermat stability without a large increase in the optical gap, although it decreased the photoconductivity.
- 社団法人応用物理学会の論文
- 1985-09-20
著者
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MORIMOTO Akiharu
Department of Electrical and Computer Engineering, Faculty of Engineering, Kanazawa University
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SHIMIZU Tatsuo
Department of Electrical and Computer Engineering, Faculty of Engineering, Kanazawa University
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Moto A
Department Of Electrical And Electronic Engineering Kanazawa University
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Shimizu T
Chiba Univ. Chiba Jpn
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KATAOKA Toyotaka
Department of Electronics, Faculty of Technology, Kanazawa University
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Shimizu Tatsuo
Department Of Applied Physics University Of Tokyo
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