Electron Spin Resonance of Conduction Electrons in Phosphorus Ion-Implanted Silicon
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1971-11-05
著者
-
SHIMIZU Tatsuo
Department of Electrical and Computer Engineering, Faculty of Engineering, Kanazawa University
-
HASEGAWA Seiichi
Department of Electronics, Faculty of Technology, Kanazawa University
-
Hasegawa Seiichi
Department Of Electronics Faculty Of Technology Kanazawa University
-
KONTANI Ryozo
Department of Electronics, Faculty of Technology, Kanazawa University
-
Shimizu Tatsuo
Department Of Applied Physics University Of Tokyo
-
Hasegawa Seiichi
Department Of Electrical And Computer Engineering Faculty Of Technology Kanazawa University
-
Kontani Ryozo
Department Of Electronics Faculty Of Technology Kanazawa University
-
Shimizu Tatsuo
Department of Electronics, Faculty of Technology, Kanazawa University
関連論文
- Influence of Buffer Layers on Lead Magnesium Niobate Titanate Thin Films Prepared by Pulsed Laser Ablation
- Effect of Oxygen Pressure on (Ba_xSr_)TiO_3 Thin Films by Pulsed Laser Ablation
- Fast and Slow Processes in Light-Induced Electron Spin Resonance in Hydrogenated Amorphous Si-N Films
- Proton Nuclear Magnetic Resonance Studies on Structural Changes Induced by Annealing of Hydrogenated Amorphous Silicon Films Prepared at High Deposition-Rate
- Mossbauer Time Spectra of the Nuclear Forward Scattering from Coherently Vibrating Resonant Nuclei
- Reduction of Interface Defect Density by Hydrogen Dilution in a-Si:H/ZnS Multilayer Films
- Identification of a New Defect in Silicon Nitride Films
- Thermal Equilibration of Defect Density in Hydrogenated Amorphous Silicon-Germanium Alloys
- Comparison between ESR and CPM for the Gap States in a-Si-Ge:H
- Temperature Simulation of Cooling Process of Ge Droplets in Laser Droplet Epitaxy(Surfaces, Interfaces, and Films)
- Preparation of Twin- and Crack-Free LiNbO_3 Films by Pulsed Laser Ablation Using Nucleation Process at High Temperature : Surfaces, Interfaces, and Films
- Rotational Honeycomb Epitaxy of Ru Thin Films on Sapphire (0001) Substrate : Surfaces, Interfaces, and Films
- Preparation of Pb(Zn_Ti_)O_3 Films by Laser Ablation
- Thermal Analysis of Target Surface in the Ba-Y-Cu-O Film Preparation by Laser Ablation Method
- Preparation of Ba-Y-Cu-O Superconducting Films by Laser Ablation with and without Laser Irradiation on Growing Surface : Special Section : Solid State Devices and Materials 2 : Thin Film Devices and Superconductors
- a-Si_O_x:H Films Prepared by Direct Photo-CVD Using CO_2 Gas : Condensed Matter
- Preparation of Ba_2YCu_3O_x Superconducting Films by Laser Evaporation and Rapid Laser Annealing : Electrical Properties of Condensed Matter
- Mechanism of Stoichiometric Deposition of Volatile Elements in Multimetal-Oxide Films Prepared by Pulsed Laser Ablation
- Annealing Temperature Dependence of MgO Substrates on the Quality of YBa_2Cu_3O_x Films Prepared by Pulsed Laser Ablation
- Influence of Sub-Gap Illumination on Light-Induced ESR in Undoped a-Si:H
- Temperature-Independent Photoluminescence in Amorphous Si_C_x:(F,H) Films with Low Defect Density
- Glow Discharge a-Si_C_x: H Films Studied by ESR and IR Measurements
- ESR and IR Studies on a-Si_Ge_x: H Prepared by Glow Discharge Decomposition
- Properties of Hydrogenated Amorphous Si-N Prepared by Various Methods
- Thin Film Patterning by Laser Lift-Off
- Comparative Study of Defect Densities Evaluated by Electron Spin Resonance and Constant Photocurrent Method in Undoped and N-Doped Hydrogenated Amorphous Silicon
- Electron-Beam-Induced Nucleation Centers and Selective Deposition of Thin Zinc Films
- Photocreated Defects in Very Thin Hydrogenated Amorphous Silicon Films : Semiconductors
- Partial Recovery of Photodegradation at Room Temperature in Hydrogenated Amorphous Silicon
- Relation between Electron-Spin-Resonance and Constant-Photocurrent-Method Defect Densities in Hydrogenated Amorphous Silicon
- Preparation of Epitaxial Ge Film on Si by Pulsed Laser Ablation Using Molten Droplets
- Change of Spin-Lattice Relaxation Time with Light Soaking for Defects in Hydrogenated Amorphous Silicon
- Removal of Surface Oxides on Copper by Pulsed Laser lrradiation
- Relation between ESR and Hydrogen in Magnetron-Sputtered a-Ge:H
- Studies on Submerged Culture of Basidiomycetes : (III) The Oxygen Transfer within the Pellets of Lentinus edodes
- Light-Intensity Dependence of Photocreated Defects in Hydrogenated Amorphous Silicon-Nitrogen Alloy Films
- Effects of Transition Metal Additives on Electronic Properties in Amorphous GeSeTe Films
- Hydrogen Incorporation Scheme in Amorphous-Microcrystalline Mixed-Phase Si: H Films
- Role of Hydrogen and Fluorine in Amorphous Silicon as Elucidated by NMR and ESR
- NMR and IR Studies on Hydrogenated Amorphous Si_C_x Films
- Magneto-Optical Characteristics of Bi-Substituted Rare-Earth Iron Garnet Films Prepared by Laser Ablation
- Preparation of Pb(Zr, Ti)O_3 Films on Si Substrate by Laser Ablation
- Influence of Laser Fluence on Structural and Ferroelectric Properties of Lead-Zirconate-Titanate Thin Films Prepared by Laser Ablation : Thin Films
- Annealing Studies on Hydrogenated Amorphous Silicon-Tin Films
- ESR and Raman Studies on Hydrogenated Amorphous Si-Sn
- Activated Sludge Process using a Multistage Tower Aeration Tank
- Influence of Hydrogen Content and Si-H Bond Structure on Photocreated Dangling Bonds in Hydrogenated Amorphous Silicon Films
- Light-Induced ESR in Variously Treated Hydrogenated Amorphous Silicon
- Relationship between Electrical Conductivity and Charged-Dangling-Bond Density in Nitrogen- and Phosphorus-Doped Hydrogenated Amorphous Silicon
- Light-Induced-ESR Study of Undoped and N-Doped Hydrogenated Amorphous Silicon
- Spectroscopic Study on N_O-Plasrma Oxidation of Hydrogenated Amorphous Silicon and Behavior of Nitrogen
- Light Soaking of a-Si:H at 77 K
- Contribution of Floating Bonds to Photocreation of Defects in a-Si:H
- Structure of Films Prepared by Glow Discharge Decomposition of Hexafluorodisilane
- Hydrogen Incorporation Scheme in a-Si_C_x:H
- Rate Equations for the Creation of Various Metastable Dangling Bonds in a-Si:H Mediated by Floating Bonds
- Properties of Amorphous Si Prepared by RF Sputtering with a High Ar Pressure
- Influence of Oxygen and Deposition Conditions on RF-Sputtered Amorphous Si Films
- Structural Studies on Hydrogenated Amorphous Germanium-Carbon Films Prepared by RF Sputtering
- NMR and ESR Studies on a-Si:H Prepared by Glow Discharge Decomposition of Si_2H_6
- ESR Study on Silica Exposed to Glow-Discharge Plasma and UV Light
- A Model for the Staebler-Wronski Effect Based on Charged Impurities
- The Effects of H and F on the ESR Signals in a-Si
- The g-Values of Defects in Amorphous C, Si and Ge
- Effect of Charged Defects on Properties of Amorphous Si-Based Alloys
- ESR Studies on the Light-Induced Effect in Si-Based Amorphous Semiconductors
- Reduction of Droplet Formatiom by Reducing Target Etching Rate in Pulsed Laser Ablation
- Laser-Irradiation Induced a-Axis Orientation in c-Axis-Oriented YBa_2Cu_3O_x Films Prepared by Pulsed Laser Ablation
- ESR and X-Ray Diffraction Studies on Ba-Y-Cu-O Superconductors : Electrical Properties of Condensed Matter
- Preparation of Ti-Al-N Electrode Films by Pulsed Laser Ablation for Lead-Zirconate-Titanate Film Capacitors
- Highty Oriented Pb(Zr, Ti)O_3 Thin Films Prepared by Pulsed Laser Ablation GaAs and Si Substrates with MgO Buffer Layer
- Fatigue Behavior in Lead-Zirconate-Titanate Thin-Film Capacitors Prepared by Pulsed Laser Ablation on Ni-Alloy Electrodes
- NH_3-Plasma-Nitridation Process of (100) GaAs Surface Observed by Angle-Dependent X-Ray Photoelectron Spectroscopy
- Effective Electron Correlation Energy in Amorphous Ge-S
- Relationship between Photodarkening and Light-Induced ESR in Amorphous Ge-S Films Alloyed with Lead
- Nuclear Spin-Spin Coupling between Protons in Vinyl Derivatives
- Light-Induced Effects and Their Annealing Behavior in a-Si:H
- Photo-Induced ESR in Amorphous Si_N_x:H Films
- Spin-Lattice Relaxation of Shallow Acceptors in Strained Silicon
- Effect of Reduction in Impurity Content for a-Si:H Films
- ESR and Constant Photocurrent Studies of Surface and Bulk Defects in a-Si:H
- Hydrogen Evolution from Amorphous Si-N Films
- Light-Induced Effects in a-Si:H Studied by ESR and Electrical Measurements
- Evidence of the Existence of SiF_4 Molecules in Fluorinated Amorphous Silicon
- Stepwise Change of Electrical and Thermodynamical Properties of (As_Te_)_Ge_x Glass with x
- Photoluminescence in Glow Discharge Deposited Amorphous Si_C_x: H Films
- Electron Spin Resonance of Conduction Electrons in Phosphorus Ion-Implanted Silicon
- ESR Studies on P^+ Ion-Implanted Si
- On the Narrow Lorentzian ESR Signal in Ge-S Glasses
- Effect of Sb Incorporation in Ge-S Glasses
- Plasma-Hydrogenation Effects in Doped CVD Amorphous Silicon Films
- Influence of Various Dopants on Electrical and Optical Properties of Amorphous Ge_S_
- Effect of Impurities on ESR Spectrum in Ge-S Glass
- Electronic-structure calculations for BC radical by density-functional theory
- Structural Analysis on T_c Variation of Bi_2Sr_Ca_Cu_2O_
- Current Transport in Doped Polycrystalline Silicon
- Electronic States for Threefold- and Fivefold-Coordinated Si Atoms in Amorphous Si : Condensed Matter
- Factors Affecting Sludge Culking in the Activated Sludge Process
- ESR in Hydrogenated Amorphous Silicon
- Spin-Lattice Relaxation of Shallow Acceptors in Strained Silicon