Light-Induced Effects in a-Si:H Studied by ESR and Electrical Measurements
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概要
- 論文の詳細を見る
Changes in photoconductivity and dangling bond density with strong illumination are measured for a-Si:H films prepared by magnetron sputtering and glow discharge decomposition. The change in the photoconductivity with illumination time and the change in the light intensity dependence of the photoconductivity depend largely on the sample preparation condition. The results are explained in relation to the Fermi level position of the sample.
- 社団法人応用物理学会の論文
- 1986-04-20
著者
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MORIMOTO Akiharu
Department of Electrical and Computer Engineering, Faculty of Engineering, Kanazawa University
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SHIMIZU Tatsuo
Department of Electrical and Computer Engineering, Faculty of Engineering, Kanazawa University
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Kumeda M
Kanazawa Univ. Kanazawa Jpn
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Kumeda Minoru
Department Of Electrical And Computer Engineering Faculty Of Engineering Kanazawa University
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Shimizu T
Chiba Univ. Chiba Jpn
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Moto Akihiro
The Authors Are With The Research Center For Superconductor Photonics Osaka University
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UNO Mitsuhiro
Department of Electronics, Faculty of Technology, Kanazawa University
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Shimizu Tatsuo
Department Of Applied Physics University Of Tokyo
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Uno Mitsuhiro
Department Of Electronics Faculty Of Technology Kanazawa University
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Morimoto Akiharu
Department of Electrical and Computer Engineering, Faculty of Engineering,
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Kumeda Minoru
Department of Electric and Electronic Engineering. Kanazawa University
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